俘獲載流子 的英文怎麼說

中文拼音 [huòzǎiliúzi]
俘獲載流子 英文
capture carrier
  • : Ⅰ動詞1. (捉住; 擒住) capture; catch 2. (得到;取得) obtain; win; reap 3. (收割) reap; harvest Ⅱ名詞(姓氏) a surname
  • : 載Ⅰ名詞(年) year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  1. The experimental results show that the surface charging is related with the pre - flashover events, the pre - flashover events can bring the change of surface charge distribution. these may be attributed to the micro - discharge caused by the traps in insulator. the charge carriers can be captured by traps, a space electric field will be set up by the trap centers, and the combined electric field may exceed the breakdown electric field of local area, then the micro - discharge will be initiated

    分析表明,反向預閃絡現象與材料的陷阱分佈有關,試樣中電極附近的陷阱中心俘獲載流子后所形成的空間電場的作用是產生這一現象的原因;預閃絡現象和表面帶電現象都是由於絕緣表面陷阱中心俘獲載流子形成空間電場造成局部場強過強引發的局部放電形成的。
  2. Carrier will be capture by trap, the number of electric carrier will decrease. the trap hold back carrier to move from crystal to other crystal. it influences the electrical properties of tft

    陷阱在浮之前是電中性的,但是在俘獲載流子之後就帶電了,在其周圍形成一個多勢區,阻擋從一個晶粒向另一個晶粒運動,導致遷移率下降,導致tft的電學性能下降。
  3. Sixteen sup - processed from 110k to 300k were found. the range of trap energy is from 0. 19ev to 0. 34ev. the maximum of the initial density distribution of the carrier in the traps locates 0. 23ev, and the curve deviated from guass type

    本文採用一種tl曲線的自動分解技術,對硅橡膠輻照老化tl曲線進行了自動分峰,結果發現在110k ~ 300k的溫度范圍內有16個過程,其陷阱活化能變化范圍為0 . 19 ~ 0 . 34ev ,被陷阱俘獲載流子初始濃度的分佈在0 . 23ev處具有極大值,且呈偏離高斯型的分佈。
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