凈摻雜 的英文怎麼說
中文拼音 [jìngchānzá]
凈摻雜
英文
net doping-
The main work of this thesis is to study of electronic structure of cathode material. some structure paramters, such as total energy, atomic net charge, atomic overlap population, of the model li5mn4o83 +, li5mn12o24 -, li7co6o2015 -, li7ni6o2015 -, li5mn2co2o83 +, li5mn2ni2o8 are calculated
論文重點研究了正極材料電子結構，通過對尖晶石型錳系材料模型li5mn4o83 +和li5mn12o24 -和層狀結構的li7co6o2015 - 、 li7ni6o2015 -模型以及摻雜模型li5mn2co2o83 + 、 li5mn2ni2o8的計算，得到了各個原子簇體系的總能量、凈電荷分佈、原子重疊布居值。Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency
半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。Tremendous efforts are underway on the lithium manganese oxides which are considered to attractive alternatives in term of cost, abundance and nontoxicity for lithium ion battery. the spinel li4mn5o12 and cation - doped lithium manganese oxides were synthesized by sol - gel method which is considered as a promising method
本文以立方晶系尖晶石結構的富鋰鋰錳氧化物為主要研究對象，以檸檬酸為配合劑，用溶膠-凝膠法合成了純凈的單相尖晶石li _ 4mn _ 5o _ （ 12 ）以及摻雜產物。Partial substitution of manganese in lixmn204 by cobalt or lithium can reduce the fermi energy, increase the. net charge of lithium ion, and diminish the value band width, corresponding to the drop of the discharge voltage, the loss of the reversible capacity, and the improvement of the cycling performance due to increasing structural stability, respectively
在limn2o4中摻入鈷和用鋰離子代替16d位錳離子將使材料的費米能減小，放電電壓降低；摻雜態中部分鋰離子的凈電荷增大，鋰離子與氧離子的相互作用增強，可逆容量降低；摻雜態的價帶寬度變窄，結構的穩定性增加，從而改善循環性能。What inconvenienced him most was the stuffy, dense, overheated air of the place with its strong, haunting smell, a smell peculiar to this part of a theater, and, as such, compact of the reek of gas, of the glue used in the manufacture of the scenery, of dirty dark nooks and corners and of questionably clean chorus girls
這空氣既混濁又悶熱，裏面還摻雜著一股濃烈的氣味。這是后臺傳出來的氣味，有煤氣的氣味，有布景上的膠水的氣味，有陰暗角落裡的臟味，還有女群眾演員的不幹凈的內衣的氣味。Rainwater is not clean water, because adulterated air pollution content, still have the pollution of the ground and roofing, nitrogen of ion of yin and yang, heavy metal, ammonia often is contained to wait in collection rainwater, a lot of people fear such water passes simple processing, whether humanness is drinkable
雨水並非純凈水，由於摻雜了大氣污染物，還有地面和屋面的污染，收集的雨水中往往含有陰陽離子、重金屬、氨氮等，很多人擔心這樣的水經過簡單的處理，能否為人飲用。Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。分享友人