均勻退火 的英文怎麼說
中文拼音 [jūnyúntuìhuǒ]
均勻退火
英文
homogenizing annealing-
Based on the project imbrued especially by hunan province construction office, the study of this paper includes four parts as follows : the first part does some simplify on the characters of the rc material under high temperature. after transferring the rc section under fire to equivalent one at normal temperature based on the stiffness and intensity equivalent, the rc members under fire can be calculated as ones at normal temperature
主要研究內容如下: （ 1 ）基於剛度等效或強度等效原則，根據截面各點材料力學性能的退化，把受火鋼筋混凝土非均勻截面等效成常溫下的鋼筋混凝土截面，使得高溫下構件剛度和強度的計算可按常溫下的計算理論進行。In this paper, the al3 + - doped zno thin films were prepared on na - ca - si glass substrate ( microscope slides ) by sol - gel process from 2 - methoxyethanol solution prepared by zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction. homogenous, transparent, polycrystalline zno thin film was formed finally by diping coating conducted for film - plate on substrate, drying, pre - heat - treatment, anealing
所用的溶膠是以乙二醇甲醚為溶劑，醋酸鋅為前驅體，乙醇胺為穩定劑反應制得，用浸漬提拉法在基體上鍍膜，經烘烤、預燒、退火，最後形成均勻、透明的多晶zno薄膜。When the atomic ratio of nb is one, the structure is homogeneous and almost composed of the single sm2fe17 phase. it ' s nearly the same structure as that after annealing. so it can reduce the production cost and increase the stability of magnetic properties
當nb的原子比為1時的鑄態組織基本為均勻的接近單相的sm _ 2fe _ （ 17 ）組織，已接近於退火后的組織，從而可以避免冗長的均勻化退火化過程而直接用於製造永磁體，極大的降低了生產成本，並能有效的提高磁性能的穩定性。With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon
隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。Production test of the production line is showed that anneal furnace combustion system with regenerative radiant - tube combustor compare with conventional radiant tube burner not only have superiorities on saving energy and environmental protection but also have advantages on temperature distribution and temperature control properties
生產線試生產的情況表明，退火爐燃燒系統使用蓄熱式輻射管燃燒器比使用常規輻射管燃燒器不僅在節能、環保方面具有優勢，而且在加熱均勻性和爐溫控制方面也有一定優越性。The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491
通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。Foam glass is a new kind of inorganic heat insulating material with a structure of equally closed cells. it is mainly made of glass added with adequate foaming agents after heating and baking in high - temperature tunnel furnace, then annealing and cooling
泡沫玻璃是一種以玻璃為主要原料，摻入適量發泡劑，通過高溫遂道窯爐加熱焙燒和退火冷卻加工處理后制得，具有均勻的獨立密閉氣隙結構的新型無機絕熱材料。The phase composition and microstructure of sm - fe - zr alloy with different amount of zr are analyzed and the effect of zr content on the microstructure of as - cast sm - fe - zr alloy is studied. the results indicate that microstructure of as - cast sm - fe - zr alloy is improved obviously with 1. 0at % zr added, and that the long - time high temperature homogenization is unnecessary for the alloys with this microstructure. by this way, the purpose of the research to decrease the cost of preparation and optimize process is achieved
分析了不同zr含量的sm - fe - zr合金的相組成和微結構，研究了zr含量對鑄態組織的影響，結果表明，添加1 . 0at的zr可以明顯改善合金的鑄態組織，從而可以避免昂長的高溫均勻化退火過程，取得了降低製造成本和優化工藝的效果。In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。This paper studies the least redundant solutions of two - dimensional array system by using the simulated annealing algorithm. two ideal thinning solutions for the two - dimensional circle array were discussed intensively in this paper. one solution uses half - circle configuration with very much reduced number of elements and taking an image by rotating the array ; the other selects element positions around the full circle to provide a roughly uniform coverage in the spatial frequency domain
在一維天線陣設計的基礎上，本文利用模擬退火演算法給出了兩種最小冗餘二維圓環天線陣的結構設計方案，一種方案利用天線旋轉，在半圓周內稀疏天線；另一種方案通過將空間頻率采樣點的均勻分佈作為優化的約束條件，在全圓周上使天線單元分佈達到最優。With both crt ' s and lcd ' s virtue, fed has a bright future in all kinds of pdf. in this thesis, a new type of field emission cathode was described, that is using simple technique to deposit commercial nano - diamond powder on ti substrates, bonding diamond and ti, and form ohmic - contact by proper high temperature to form cathodes
本文介紹了一種器件結構和制備工藝簡單，易於實現大屏幕顯示，且適于批量生產的新型場發射陰極，即在金屬鈦襯底上均勻塗覆納米金剛石塗層，然後在高溫下退火處理實現兩者的牢固鍵合，並形成歐姆接觸。The difference is mainly resulted from the original structure and texture inhomogeneity of hot rolled steel plates, and the process of heating and annealing can also have a great effect on the inhomogeneity of the surface and center grain sizes in the steel sheets
這種區別主要來源於熱軋鋼板原有組織和織構的不均勻性，退火加熱過程也會對鋼板表面和心部晶粒尺寸的不均勻性產生很大影響。分享友人