均方根電壓值 的英文怎麼說

中文拼音 [jūnfānggēndiànzhí]
均方根電壓值 英文
voltage root mean square
  • : Ⅰ形容詞(均勻) equal; even Ⅱ副詞(都; 全) without exception; all
  • : Ⅰ名詞1 (方形; 方體) square 2 [數學] (乘方) involution; power 3 (方向) direction 4 (方面) ...
  • : Ⅰ名詞1 (植物的營養器官) root (of a plant) 2 (比喻子孫後代) descendants; posterity 3 [數學] ...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 壓構詞成分。
  • 方根 : nth root
  • 電壓 : voltage; electric tension; electric voltage
  1. The design adopts ac sample method to get 3 - phase voltage and current samples. the design computes three basic electric parameters according the sample values and monitors the voltage and current of pumping machine with keyboard and lcd

    對抽油機工作流進行數據採集,用法由交流采樣計算三個基本參數,並通過lcd和鍵盤進行隨時的監測。
  2. Capacitance between any two terminals in the installation should no more than 1. 06. 3. insulation level of installation : for rated voltage of 6kv installation, it can endure 23kv rms for 1 min between the phrase to phrase or phrase to earth of main circuit ; for rated voltage of 10kv installation, it can endure 30kv rms for 1 min between the phrase to phrase or phrase to earth of main circuit ; it can be endure 2kv rms for 1 min between auxiliary circuits of installation

    3 .裝置的絕緣水平: 6kv額定的成套裝置,其主路相間及相與地之間,工頻耐受23kv , 1min 10kv額定的成套裝置,其主路相間以及相與地之間,工頻耐受30kv , 1min成套裝置輔助路工頻耐受2kv , 1min 。
  3. Withstanding voltage testers the laboratory offers calibration for withstanding voltage testers with sinusoidal output voltages ( 50 hz ) not exceeding 11 kv ( r. m. s

    本所為輸出正弦50hz不超過11kv的交流耐測試器提供校正服務。
  4. Voltage root mean square

    均方根電壓值
  5. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態,據其沿溝道非勻分佈的模型,採用準二維分析法對退化后器件的漏源流、閾和飽和區溝道場作了詳細的理論推導,並與實驗結果和器件二維數模擬軟體minimos6 . 0的計算結果進行了驗證比較。
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