寬禁帶 的英文怎麼說

中文拼音 [kuānjīndài]
寬禁帶 英文
large energy gap
  • : 禁動詞1. (禁受; 耐) bear; stand; endure 2. (忍住) contain [restrain] oneself
  1. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料,具有、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點,是高溫、高頻、高功率半導體器件的首選材料。
  2. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅( zno )是一種重要的寬禁帶( eg = 3 . 37ev )半導體材料,其激子束縛能高達60mev ,在室溫紫外光電器件方面有巨大的應用潛力。
  3. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體( - al _ 2o _ 3 )不僅由於其色澤艷麗成為人們珍愛的名貴寶石,而且由於它具有的優異性能,被廣泛應用於電工、機械、激光器,光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體調諧激光材料,用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接寬禁帶半導體材料(度3 . 37ev ) ,現已發現具有室溫下受激發射特性,有可能實現室溫下半導體紫外發光。
  4. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接隙半導體材料,具有非常高的激子束縛能( 60mv ) ,即使在室溫條件下激子也不會分解,因此可以被用作光發射器件,如led和ld等。
  5. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性,因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  6. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ,因其具有度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性,被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  7. Zinc oxide is a material widely used in many areas

    氧化鋅是一種多用途的寬禁帶半導體材料。
  8. Zno is a direct wide band - gap ii - vi semiconductor material

    氧化鋅是一種-族寬禁帶氧化物半導體材料。
  9. Wide bandgap semiconductor

    寬禁帶半導體
  10. Wide bandgap emitter

    寬禁帶發射極
  11. The band gap calculation of wide - gap ternary compound nitride semiconductors in group

    寬禁帶含氮三元混晶半導體度的計算
  12. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅( zno )是一種具有六方結構的的寬禁帶-族半導體材料,室溫下能隙eg為3 . 37ev 。
  13. As a direct wide - band - gap ii - vi semiconductor, znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes, nonlinear optic - electronic components and infrared devices

    Znse作為最重要的寬禁帶-族半導體,其單晶在蘭綠光發射器件、非線性光電器件和紅外器件方面有著廣泛的應用。
  14. Zinc oxide ( zno ) is an important wide - band ( 3. 37ev ) semiconductor with low dielectric constant

    Zno是一種重要的寬禁帶(常溫下為3 . 37ev )低介電常數的直接隙半導體材料。
  15. Zinc oxide, zno, a wide direct - gap semiconductor, attracts as much attention as gan in photoelectric research field

    Zno ,作為一種直接寬禁帶半導體材料,是繼gan之後光電研究領域又一熱門的研究課題。
  16. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接隙材料,具有六方結構,較高的激子束縛能( 60mev ) ,室溫下度為3 . 3ev 。
  17. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅( zno )是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料,由於其優良的特性,在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  18. Traditionally, zno is used as surface acoustic wave devices ( saw ), bulk acoustic devices ( baw ), gas sensors, varistors, transparent electrodes, uv - detectors, and etc. in recent years, zno has gained more and more attention as a wide band semiconductor

    傳統上, zno薄膜被廣泛應用於聲表面波器件、體聲波器件、氣敏傳感器、壓敏電阻、透明電極、紫外探測器等領域。近年來, zno作為寬禁帶半導體光電材料的研究越來越受到人們的重視。
  19. Zinc oxide ( zno ) is an interesting wide band gap ( 3. 3 ev ) semiconductor material with a binding energy of 60 mev

    氧化鋅是一種重要的寬禁帶隙( 3 . 3ev )半導體材料,它的激子束縛能高達60mev 。
  20. Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties

    氧化鋅( zno )是一種具有六方纖鋅礦晶體結構的寬禁帶-族半導體材料,由於其優良的物理特性, zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。
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