延性斷層作用 的英文怎麼說

中文拼音 [yánxìngduàncéngzuòyòng]
延性斷層作用 英文
ductile faulting
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 斷 : Ⅰ動詞1 （分成段） break; snap 2 （斷絕;隔斷） break off; cut off; stop 3 （戒除） give up; abstai...
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 用 : Ⅰ動詞1 （使用） use; employ; apply 2 （多用於否定: 需要） need 3 （敬辭: 吃; 喝） eat; drink Ⅱ名...
  • 斷層 : fault; slip; slicle; fracture; dislocation
  1. Focused on " understanding media ", the article analyses in chapter i the key media theory of employing what could be of mcluhan in a thoughtful angle ， and advances the viewpoint of " human being - the extending of media ? ". in chapter ii 、 in the following third part ， the idea of " media ' s endding " is expounded and demonstrated ， which is composed of three parts ： extreme of speed ， content of the content ， and human being ' s last extending - the extending of central nerves 。 in the final part ， the general conclusion ? ? electronic media ' s influence on human behavior is given ， that is human are under universal narcissism and pacing to the bottom of it impelled by electronic speed. the article has five original points in it ： first of all, in virtue of " content theory " ， it analyzes the theory of " meida equals to information " by mcluhan from a scale theory stand. secondly, the tremendous power of electronic media is emphasized from an implosion view. in the third point, the article advanced originally that, after extension of central nerve system, human themsevels reverse to an extension of media and turns into a node of it ; at the same time, the article proposes that, all extensions before that of central nerve are " controllable extension ", however, it reverses to " uncontrollable extension " while extending ; then the authur put forward for the first time that, the concernful reason obsessing human is the failure of their in - body central nerve system " s jointing and controlling on out - body central nerve system naturally. 。 the fourth point is, the article demonstrates systematically the idea of " media ' s endding " from three levels solely by thoughtful means, and this is the most revolutionary point of it all

    論文的創新之處有五點：一是從「尺度論」的角度，藉助「內容論」來解讀麥克盧漢的「媒介即訊息」的思想；二是從「內爆」的角度突出電子媒介的巨大力量；三是獨創提出在電子媒介時代，人類延伸了自己的中樞神經系統之後，人類本身被逆轉為媒介的延伸，成為電子媒介的一個節點；同時在本章節中提出中樞神經延伸之前的所有延伸為「可控延伸」 ，而中樞神經被延伸時「可控延伸」逆轉為「不可控延伸」 ，並首次提出，困擾人類種種問題的重要原因是體內的中樞神經系統無法無縫地對接和控制被延伸出去的體外中樞神經系統；四是獨自運用思辯的力量從三個層面綜合論證了「媒介的終結」的觀點，此處論證為本文最大創新之處，而此結論也將具有重大的理論與現實意義；五是根據以上幾個部分的論述，對人類目前的總體狀態作了一個定性的判斷，即：我們這個時代的迷惘在於我們深陷於自戀的漩渦里難以自拔，在電子媒介以其固有的電力速度的推動下，我們走向自戀的盡頭。
  2. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
分享友人
分享到 Line

分享到臉書