弛豫方程 的英文怎麼說

中文拼音 [chíyùfāngchéng]
弛豫方程 英文
relaxation equation
  • 弛 : 動詞1. [書面語] （松開; 鬆懈） relax; loosen; slacken 2. （解除; 免除） fall off; fall out of use
  • 豫 : Ⅰ形容詞[書面語]1 （歡喜; 快樂） pleased 2 （安適） comfort Ⅱ名詞1 （河南的別稱） another name for...
  • 方 : Ⅰ名詞1 （方形; 方體） square 2 [數學] （乘方） involution; power 3 （方向） direction 4 （方面） ...
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  1. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  2. The second part is about co2 lasers. we first discuss the mechanisms of population inversion, including excitations and relaxations ( electron collision excitation, resonance transition excitation impacted by excited n2 molecules, the relaxation of both the lower - upper laser levels and the lowest level of co2 )

    首先，討論了二氧化碳激光粒子數的反轉機理，包括電子碰撞激勵、激發態n2分子等共振轉換激勵過程，激光上下能級co2 （ 00 1 ， 10 0 ）以及最低能級co2 （ 0110 ）的弛豫過程等幾個方面
  3. On the basis of rate equations of frsl, power characteristics and extinction ratio of the converted light are discussed. the relation between relaxation oscillation, small - signal modulation response, modulation bandwidth and the length of fiber ring cavity is analyzed also

    根據frsl滿足的單模速率方程，討論了採用frsl進行波長轉換時轉換光的功率特性和消光比，以及frsl的弛豫振蕩特性、小信號調制響應、調制帶寬與光纖環形腔長度的關系。
  4. The relaxation oscillation in solid - state laser with relaxation oscillation pumping is studied theoretically by the rate equation. the undulation of the laser photon density contains relaxation oscillation frequency itself and that of pumping. when those two frequencies are close, the oscillation will be resonated

    我們用速率方程小信號近似方法對泵浦帶有弛豫振蕩的固體激光器的弛豫振蕩的特性進行了系統的理論研究，發現實際光子數的起伏同時具有自身固有的弛豫振蕩頻率和泵浦光的弛豫振蕩頻率兩種分量。
  5. 6. on the base of the two - phase flow theory, the paper studies the velocity distributing of solid - liquid two - phase flow, acquires the distributing function of velocity and consistence, on the other hand, studies the loosing during flow, and gets the movement equation of solid - liquid two - phase flow. finally, the paper analyzes the flow characters of solid - gas two - phase flow, put forwards the boltzmann equation, gets the critical condition of slope angle tg a > tg ( p1, and brings forwards the relevant m

    （ 6 ）分別應用二相流理論研究了固液型碎屑流流速分佈，得出了流速分佈及濃度分佈的方程式，並進一步研究了固液型碎屑流流動過程的弛豫現象，得出了固液型碎屑流的運動方程；同時，分析了固氣型碎屑流（即干碎屑流）的運動特點，給出了固氣型碎屑流的boltzmann方程，得出了干碎屑流的臨界坡角條件哈a2igs 』 ，並給出了滿足此條件下干碎屑流的運動方程。
  6. The second aspect : from qgp kinetic equations with collision integrals, by using the relaxation time approximation, we calculate the distribution functions to the second order correction. we obtain the distribution functions for quarks ( and anti - quarks ) and gluons under perturbation of the fluctuation of the color field. then in the high - temperature - low - density area, we discuss the characteristics of the distribution functions, and use t hem to get the net baryon density and the energy density

    第二，從有碰撞項的qgp動力論方程出發，忽略自旋，在色漲落擾動下，利用弛豫時間近似，得到夸克和膠子分佈函數的二級修正，通過數值分析重點討論了高溫低密情況下qgp中成分粒子分佈函數的特性，並且由分佈函數得到凈重子數密度和能量密度。
  7. This paper gives the general kinetics equation as well as the critical shear stress value ( or the critical press gradient value ) when the chain structure breaks down, and the method to get the structure relaxation time in the " structure capture particle " process

    給出了電流變響應過程的一般動力學控制方程以及鏈崩潰時臨界的剪切應力值（壓力梯度值） ，及俘獲粒子過程中有關結構弛豫時間的求法。
  8. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
  9. Results from various measurement technique show that sige films grown by uhvcvd have higher crystal quality than those by ssmbe and gsmbe. and uhvcvd is proposed to be employed in the further work of our sige - oi fabrication

    從這些測試結果可以得出， uhvcvd方法可以生長的高質量、未弛豫的sige薄膜，而ssmbe和gsmbe生長的sige層都發生了一定程度的弛豫，晶體質量相對較差。
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