弛豫譜 的英文怎麼說
中文拼音 [chíyùpǔ]
弛豫譜
英文
relaxation ectrum-
It is found that the exciting spectra is moving to long wave with the increasing of eu concentration, emission intensity is rising, the properity of red homochromy is becoming better because of the different quench concentration of emission levels 5do, 5dj and 5d2 - when the concentration of eu is up to 1. 2mol %, the emission levels 5di and 5d2 is quenching
研究發現,隨著eu濃度的增加,熒光體y2o2s : eu激發光譜發生紅移,發射強度增大,紅色單色性變好,這是因為eu的5d0和sdl 、 5d2發射能級躍遷發光的淬滅濃度不同,當濃度1 . 2mol時,后兩者因交叉弛豫引起濃度淬滅。Zhen chen, kong - shuang zhao, dielectric relaxation spectroscopy of macroporous ier beads suspensions dispersed in primary alcohols and water ? ethanol mixtures, colloids and surfaces a, 2006 ( in press, available online )
智霞,陳震,趙孔雙,李國明,何廣平,殼聚糖微球懸濁液的介電譜研究:弛豫機制的解釋和內部信息的獲得,化學學報, 2006 , 64 : 709 - 715Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors
我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料,用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ ( 1 - x ) zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究,製作了厚1 ? 1 . 5mm的探測器,測試了c 、 in 、 au等不同金屬的電極接觸性能,並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析,同時測得的~ ( 241 ) am源的能譜。The temperature dependence of dielectric constant between room temperature and 500 under 1 khz, 10khz 100khz frequency conditions were measured, it is found that the ceramics are relaxor ferroelectric. the relaxor properties are decreased by the substitution of ba2 +
測量了各樣品在1khz 、 10khz 、 100khz頻率下從室溫至500的介電溫譜,表明材料為弛豫鐵電體, ba ~ ( 2 + )的摻入使其弛豫特性有所降低。In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %
通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低,容易在表面堆積;結合x射線雙晶衍射分析,確定高溫insb外延生長的最佳襯底溫度為440 ,該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ,應變弛豫99 . 02 % 。分享友人