拉晶法 的英文怎麼說

中文拼音 [lājīngfǎ]
拉晶法 英文
crystal pulling method
  • 拉 : 拉構詞成分。
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  1. Besides acting as agent of huzhou zhanwang pharmaceutical co., ltd. for a variety of adjuvant, we are also the agent for many imported adjuvant, such as new zealand wyndales lactose ; germany basfs vitamins and direct compression excipients ; france roquettes polyatomic alcohol ; germany sasols polyglycol ; switzerland givandans powdery flavoring essence ; usa cabots gas silica ; italy randi groups tartaric products ; uk crodas tween and span ; japan asahikaseis microcrystalline cellulose ; usa noveons carbopol resin, etc

    我公司除代理湖州展望化學藥業有限公司各種輔料，同時代理多家進口輔料，諸如：紐西蘭乳糖系列產品、德國巴斯夫公司維生素系列產品及直接壓片輔料；法國羅蓋特多元醇系列產品；德國沙索公司聚乙二醇系列產品；瑞士奇華頓粉末系列香精；美國卡博特公司氣相法二氧化硅；義大利拉第集團天然酒石酸系列產品；英國禾大公司吐溫，司盤系列；日本旭化成公司微晶纖維素系列產品；美國諾譽公司卡伯波樹脂系列等。
  2. The cholesteryl liquid crystal mixture was microcapsulized by complex coacervation method using gelatin and acacia as membrane materials. the effects of the concentr ation and quantity of arabic gum on the microcapsule particle size and color showing were also studied

    最後，採用以明膠?阿拉伯樹膠為囊壁材料的復凝聚法對配製的顯色示溫混合液晶進行了微膠囊化處理，並著重討論了阿拉伯樹膠的濃度及用量對液晶微膠囊粒度及顯色效果的影響。
  3. Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices

    液封直拉法砷化鎵單晶及切割片
  4. Because of the large stuff of silicon, complex structure of furnace and expensive cost, computer simulation is a best way to optimize design. in order to study the new heat system, we have calculated the heat zone of 200mm solar cell czsi growth

    由於拉晶過程中投料量較大，爐體結構復雜、造價昂貴，所以計算機數值模擬對于優化單晶爐設計是一種重要的工具。本論文用有限元方法對改造后單晶爐的適合的熱場進行了數值模擬。
  5. In this paper, the al3 + - doped zno thin films were prepared on na - ca - si glass substrate ( microscope slides ) by sol - gel process from 2 - methoxyethanol solution prepared by zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction. homogenous, transparent, polycrystalline zno thin film was formed finally by diping coating conducted for film - plate on substrate, drying, pre - heat - treatment, anealing

    所用的溶膠是以乙二醇甲醚為溶劑，醋酸鋅為前驅體，乙醇胺為穩定劑反應制得，用浸漬提拉法在基體上鍍膜，經烘烤、預燒、退火，最後形成均勻、透明的多晶zno薄膜。
  6. The control system of mould level is crucial to improve the slab quality in the continuous casting process, pid controller is used in the traditional mould level control, and it has some defaults, such as : at the start - up or finishing period of casting or during the changeover of tundish, pid control has a bad effect, its overshoot is large and its transient time is long ; the erosion of the tundish stopper and the submersed nozzles lead to the accuracy of control become bad ; the abrupt falloff of block in the submersed nozzles makes the level acutely fluctuate, and pid control can not overcome the disturbances resulted from the change of casting speed

    結晶器液位控制系統是提高連鑄產品質量的關鍵環節，傳統的連鑄機液位控制方法採用常規的pid控制，存在如下不足：開始、結束澆注和換中間罐澆注時，控制效果差，超調量大，過渡時間長；塞棒頭和浸入式水口被腐蝕后引起控制精度差；浸入式水口堵塞物的突然脫落所引起的液位劇烈波動；無法克服拉速波動引起的擾動。
  7. During the course of the manufacture for packaging 2000 pixel hgcdte irfpa wafer, some crucial techniques are solved, such as the design of the button stem structures with inclined dragging wires applied in cryogenic platform, the optimization of long linear irfpa detector ' s signal wires layouts, the implement of a fanout board having thin film gold metalization for defining the required electrical conductors and a method of hermetically sealed vacuum enclosure of large dimension windows, etc

    在用於封裝2000元碲鎘汞焦平面晶元的分置式微型杜瓦研製中，詳細闡明了一種焦平面晶元其裝載面為斜拉式支撐結構的設計，實現了探測器外引功能線的布線優化及其輸出引線工藝改進，並提出了一種大尺寸高氣密光學窗口的焊接方法等關鍵技術。
  8. In the paper, we describe the whole configuration of the joint transform correlator ; introduce the correlative theories of joint fourier transform in detail ; in order to achieve better correlation result, the nonlinear processing of joint transform power spectrum ( jtps ) is put forward, the effect of jtps laplace sharpening and binary processing to the correlation image is given ; the method of the best binary threshold is determined ; we analyse the correlation image, present the way that removes liquid crystal diffraction spot, direct current spot and image noise, and binarize the correlation image finally

    本論文主要對提出的聯合變換相關的整體結構進行了描述；詳細介紹了聯合傅里葉變換的相關理論；為了得到更好的相關結果，本文提出對聯合功率譜進行非線性處理的方法，給出了聯合變換功率譜的拉普拉斯銳化和譜的二值化處理對相關峰圖像的影響及二值化最佳閾值的確定方法；對相關峰圖像信息進行了分析；提出了消除液晶衍射光斑、直流光斑和圖像噪聲的方法；最後對相關峰圖像進行了二值化處理。
  9. The first stage is primary slip then followed by secondary slip ; the last stage is due to dislocation passing the slips. the cyclic stress strain ( css ) curve exhibits a stronger hardening occurred in cyclic plastic deformation than that in tensile test

    建立了拉伸和應變疲勞的有限元模型，使用基於晶體滑移模型的數值方法，對晶體內部滑移系的啟動以及滑移繫上的分解切應變、切應力這些無法試驗觀測的變量進行計算，分析它們對晶體塑性變形的不同影響。
  10. A large amount of data of the latest regional geoglogy and the latest correlation data of layers and rock formation have been quoted, and a description of distribution of crystalline basement, formation, evolution as well as the distribution characteristic of the fracture belt of ordos basin have been made in this paper, and the paper also pointed out that the g - layer which lies between the base of the basin and tg reflector, is the extension of basinward of guandaokou of jixian system. the layer of changcheng system and jixian system, which had been divided before, can be correlated with the exposed huangqikou group and wangquankou group in helan mountain, and divided into qingbaikou system. so, the paper denied the viewpoint of the existence of aulacogen in hutuo period and middle proterozoic in this basin

    文中引用了大量最新的區域地質資料和最新的地層、巖系劃分對比資料，對鄂爾多斯盆地結晶基底的巖系分佈、形成、演化以及斷裂的展布特徵進行了描繪，並指出盆地基底與tg反射層之間的g層是薊縣系官道口群向盆地的延伸，盆地中原劃分的長城系、薊縣系地層可以和賀蘭山出露的黃旗口組、王全口組對比，亦劃歸青白口系，從而否定了鄂爾多斯盆地存在滹沱期坳拉谷和盆地中有中元古坳拉谷發育階段的看法。
  11. The tensile and compression experiment on bulk nanocrystalline ag prepared by igc method was carried on mt810 with different grain sizes and zwick 10tn2s machine at different strain rates under normal temperature respectively. the stain rate sensitivity m was found to be 0. 025, which was extremely lower than the ordinary values. also the work hardening exponent is very low

    本文從用惰性氣體蒸發冷凝和真空原位壓結法（ igc ）制備得到的直徑80mm ，厚度7 . 6mm的大尺寸納米晶金屬ag樣品上切割得到符合力學實驗要求的拉伸和壓縮試樣，在mts810和zwick精密力學測試機上分別精確測定了拉伸和壓縮應力?應變曲線與晶粒尺寸和應變速率的關系。
  12. Study on precise cold extrusion technology of 6061 al - alloy splines shell

    電沉積法制備的超細晶薄銅板拉伸及表面層效應
  13. Therefore, in this paper, two directional solidification methods, czochralski method and electron - beam floating zone melting method, were used to obtain such material. the directional solidifition microstructures of si - tasi2 system was performed using neophot - 1, amray - 100b sem and jem - 2000cx tem analysis technique

    本文採用切克拉斯基法（ cz法）和電子束區熔法（ ebfzm ）兩種定向凝固方法制備該共晶自生復合材料；藉助金相技術、電鏡技術、圖象處理技術等多種分析測試手段，考察了si - tasi _ 2共晶定向凝固組織和及其相應的工藝規范。
  14. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  15. From discussing the factors that influence the quality of the single - crystal, a positive method using the floating - boat method from the british mr corp. to control the diameter of the single - crystal was determined, and produced the highest quality low epd single - crystals international

    該實驗討論了各種因素對拉制磷化鎵單晶的影響。並確定了一套較優越的拉制方法，制備出了國際上現階段所能達到的最高水平的低位錯單晶。
  16. In this paper, 130mm diameter hot - rolled bars ( 3 transus temperature is 798 c ) were used in experiments. the superplastic property of ti - 1023 alloy was studied systematically by the experiments of tensile and compression. the preparation method of fine - crystalline structure and the processing parameters of superplastic forging are optimized

    本文以130mm熱軋棒材為原材料，通過超塑性拉伸和超塑性壓縮試驗，對ti - 1023合金的超塑性進行系統研究，研究坯料細晶組織制備方法，優化超塑成形工藝參數，為高筋薄腹板復雜形狀ti - 1023合金鍛件超塑性等溫模鍛工藝的制定提供試驗依據。
  17. Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry

    液封直拉法生產的半絕緣砷化鎵單晶（ lecsi - gaas ）被廣泛用於微波器件和高頻集成電路的襯底材料，成為當代信息產業的重要材料之一。
  18. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  19. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  20. In this paper, germanium concentration in ge - dopped silicon bulk single crystals was measured by the methods of indution couple plasma ( icp ) direct reading spectrometer, sims, sem - edx, and the effective segregation coefficent of germanium under the situation of the changed speed was calculated, the result was 0. 62. according to the result, the curves of different ge concentrations were got

    本論文利用二次離子質譜（ sims ） 、化學分析法（電感耦合等離子體（ icp ）直讀光譜儀） 、掃描電鏡能譜儀（ sem - edx ）三種方法對不同摻鍺濃度的czsige單晶中鍺含量進行了測試，並對變速拉晶條件下鍺的有效分凝系數進行了計算，得出鍺的有效分凝系數（ ke ）為0 . 62 。
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