拉晶軸 的英文怎麼說
中文拼音 [lājīngzhóu]
拉晶軸
英文
drawing axis of crystal-
When ct20 alloy was tensioned at 20k, the main deformation mechanism in equiaxed microstructure was the slip of dislocations, and in bimodal microstructure the slip of dislocations and a small amount of twinning and in lamellar microstructure a large amount of twinning
Ct20合金20k拉伸變形時，等軸組織主要是位錯的滑移起主導作用，雙態組織除了位錯滑移外還有少量的變形孿晶產生，片狀組織中則能觀察到數量較多的孿晶。Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。From an examination of the tensile behavior of cz ly12 alloys under different temperature and strain rate, two kinds of deformation and intergranular fracture behaviors were observed that were opposite to the characteristic strain rate range in fine - grained superplasticity. the mechanisms are described as follows. the high ductility achieved at high strain rate is generally attributed to the dominant role of gbs accommodating mechanisms, which is considered as dislocation creep within grains controlled by subgrains
研究選用自然時效淬火態的ly12鋁合金，進行了一系列不同溫度和應變速率下的單軸拉伸試驗， 480下，觀察到與傳統細晶超塑性特徵區間相反的行為：較高應變速率下，動態再結晶使晶粒細化，促進了晶界滑移，亞晶界控制的晶內位錯蠕變是晶界滑移的主要協調機制。Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。分享友人