掃描藝術 的英文怎麼說

中文拼音 [sǎomiáoyìshù]
掃描藝術 英文
ba（hons） time based art
  • 掃 : 掃構詞成分。
  • 描 : 動詞1. （照底樣畫） copy; depict; trace 2. （在原來顏色淡或需改正之處重復塗抹） retouch; touch up
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  • 術 : 術名詞1. （技藝; 技術; 學術） art; skill; technique 2. （方法; 策略） method; tactics 3. （姓氏） a surname
  • 藝術 : 1. （文藝） art 2. （富有創造性的方法） skill; art; craft 3. （形狀獨特而美觀的） conforming to good taste
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  2. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  3. In general, graphics and image software only can copy, cut, delete, compose and art design pictures input computers by digital cameras or scanners. the fractal theory gets over this flaw and pictures can be drew by pure mathematical methods

    常用圖形圖像軟體以復制、剪切、刪除、合成和藝術加工為其主要手段，就必須藉助于數碼相機、掃描儀等工具把圖片輸入計算機，利用分形理論繪制圖形則克服了這一缺點，可以用純的數學方法來模擬造型。
  4. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡（ sem ）和原子力顯微鏡（ afm ）分別觀察了薄膜的表面形貌;利用掠入射x射線衍射（ gixrd ）測量了薄膜的殘余應力。
  5. Due to the fact that the properties of infrared detector array ca n ' t be satisfied to produce a image with high resolution because of the level of manufacture, the phenomenon of subsampling and serious aliasing emerges. in order to reduce these phenomenon and improve the image resolution the technique of microscanning is introduced

    紅外探測器陣列由於受到工藝水平的限制，不能製成用於產生高解析度紅外圖像所要求的密度，一般會產生空間欠抽樣圖像，圖像中有嚴重的混淆現象，為了減小這種混淆、提高解析度，引入微掃描技術。
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. To further perfect the process of laser rapid prototyping and to further improve the manufacturing precision of the rapid prototyping technology, a theoretical analysis is made of the galvanometer scanning system widely - used in stero - prototyping technology, and a kind of new correction algorithm is suggested and practised

    摘要為進一步完善激光快速成型工藝，並提高快速成型技術的製造精度，對立體成型技術中廣泛使用的振鏡掃描系統進行了理論分析，提出並實踐了一種新的校正演算法。
  8. As an important branch of rapid prototyping ( rp ), direct laser metal sintering ( dlms ) is used for manufacturing metal parts by scanning metal powder based on the process of selective laser sintering ( sls )

    直接激光金屬燒結技術基於選擇性激光燒結快速成形工藝機制，採用粉末逐點熔化的掃描方式，對金屬粉末材料進行直接激光燒結成形制備金屬零件。
  9. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
  10. Aim at the demand of the semi - conductor technics, this text provided the principle make use of the electronic microscope to proceed the analysis and key technique of using

    摘要針對半導體工藝的需要，本文提供了利用掃描電子顯微鏡進行分析的機理及採用的關鍵技術手段。
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