掩模圖 的英文怎麼說

中文拼音 [yǎnmótú]
掩模圖 英文
mask pattern
  • 掩 : 動詞1 （遮蓋; 掩蔽） cover; hide 2 （關; 合） shut; close 3 [方言] （被卡住） get squeezed [pinch...
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 圖 : Ⅰ名詞1 （繪畫表現出的形象; 圖畫） picture; chart; drawing; map 2 （計劃） plan; scheme; attempt 3...
  1. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  2. The second is about verification of alternating psm manufacturability and this part introduces a new method based on standard cells to resolve the phase conflicts, including for dark field and for clear field. the method has the capabilities of verifying standard cell layout, locating features with phase conflicts and giving out suggestion for modification

    第二部分針對由傳統方法設計出的版圖不能滿足交替移相掩模要求的問題，介紹了一種基於標準單元的交替移相掩模可製造性驗證與設計的演算法，包括針對暗場和亮場兩種不同環境版圖的演算法。
  3. The principle, theory, realizing methods for holographic lithography as well as the pattern transfer mechanism among the traditional photomask - hologram mask - resist have been deeply investigated. an experimental system with total inner reflection wavefront conjugation holographic lithography using right angle prism and refractive index matching liquid is designed and built, and the experimental research is carried out

    對全息光刻的原理、理論、實現方法及傳統光掩模?全息掩模?抗蝕劑圖形傳遞機理進行了深入的研究，設計和建立了採用直角棱鏡和折射率匹配液的全內反射波前共軛全息光刻實驗系統，進行了實驗研究。
  4. Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.

    光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。
  5. Nevertheless, it ' s not very precise to locate the skin color region only in this way. so the texture model is introduced into the system. consequently, we get the skin region by the combination of skin color model and texture color model

    然而，單純地使用膚色模型並不能準確的找出皮膚區域，觀察發現皮膚區域多為光滑的連通區域，因此在上一步工作的基礎上作者引入了紋理模型對原圖像進一步的處理產生標注皮膚區域的掩碼圖像。
  6. A phase - compatibility rule checker for standard cell layout designed with alternating psm

    一種用於標準單元版圖交替移相掩模相位兼容性規則檢查的工具
  7. A soft - ware implementing this method is presented as well, which has the capabilities of verifying standard cell layout, locating features with phase conflicts and giving out suggestions for modification

    基於此方法的軟體工具能夠檢查標準單元版圖，找出不符合交替移相掩模設計要求的圖形，並給出相關的修改建議。
  8. However, in current design flow, designers do not consider whether designs are friendly to opc before they are sent to foundries. in fact, a lot of features in such designs can not be corrected enough because of many factors such as the constraints of environments. so even though such designs are corrected, many lithographic errors still exist

    然而，由於在當前的集成電路設計流中，在設計出的版圖送到製造廠商前，電路的設計者並沒有考慮版圖對光學鄰近校正和交替移相掩模的友好性問題，這使得版圖中的一些圖形由於周圍條件的限制，如無法充分進行光學鄰近校正，無法進行交替移相掩模的處理等，從而使得版圖設計即使進行了校正處理，還存在大量光刻故障的可能性。
  9. The main works are as follows : firstly, we compare image enhancement in wavelet domain with that based on unsharp masking and indicate that there is intrinsic relation between them, namely they both enhance images by enhancing the high frequency coefficients. because after an image is decomposed in wavelet domain, every high frequency can be enhanced. however, if unshrap masking is used, only one high frequency channel is enhanced

    本文主要研究了基於小波多分辨分析的圖像去噪和增強，主要工作如下： 1將反銳化掩模與基於小波多分辨分析的圖像增強進行了對比分析，指出它們之間存在著內在的聯系，即兩者都是對與圖像邊緣細節對應的高頻實行增強，而且指出前者只不過是後者的一個特例，因為小波分解后，多級尺度多個高頻通道可得到增，而反銳化掩模僅增強了一個高頻通道。
  10. Using computer - aided alignment method, the schwarzschild optics was assembled with wave - front error of 18nm in rms value which is a good match to the simulation wave - front error by introducing figure errors of primary and secondary mirrors using zemax optical software. positive resist of zep520 ( nippon zeon co. ltd ) was employed in exposure experiments

    在集成后的euvl原理裝置上，採用zep520 （ nipponzeonco . ltd ）正性抗蝕劑及掩模調焦方案，初步進行了透射掩模的曝光復制實驗，國內首次獲得了0 . 75 m線寬的euvl復制圖形，完成了euvl的原理性貫通。
  11. For the coordination of the contradictory, the wavefront technique has been regarded as an effective method to improve the image quality in photolithography by optimizing the image of the mask. it includes : pupil filtering, phase shift mask, off - axis illumination, optical proximity correction, and so on

    為了協調這種矛盾，利用波前工程來改善光刻圖形的質量以提高光刻解析度，已廣泛地應用於光學光刻中，如：瞳孔濾波、相移掩模、離軸照明、光學鄰近效應校正等。
  12. Simulation and experiments show that for point array or hole array patterns with the same sizes maskless interference photolithography is much simple than the traditional photolithography

    模擬和實驗結果表明，對點陣或孔陣圖形，在同樣的圖形尺度下，無掩模干涉光刻比傳統光刻簡單得多。
  13. The basic principle, theory, main types and realizing methods of maskless laser interferometric lithographic technology used for generation of high resolution, deep sub - micron and nanometer patterns in large field of view are deeply investigated

    深入研究了無掩模激光干涉光刻技術用於高分辨、大視場、深亞微米和納米圖形生成的基本原理、理論、主要類型和實現方法。
  14. For the positive real function image encoded by double random - phase, the first random - phase mask placed in the blank can not serve as the key when the decrypted image is detected by intensity detector in the decrypting process

    摘要正的實函數圖像通過雙隨機相位編碼加密以後，在解密過程中，用光強探測器接收解密圖像時，位於空域的第1塊相位掩模不起密匙作用。
  15. Imaging interferometric lithography ( iil ) transfers different components of spatial frequencies through the same limited aperture at different time to enhance the resolution power of lithography with increasing less cost of system

    摘要掩模投影成像干涉光刻技術以在很小或幾乎不增加光刻系統成本的基礎上來提高光刻解析度為目的，充分利用系統的有限孔徑，將掩模圖形不同的空間頻率分別進行傳遞，最終以高解析度對掩模成像。
  16. Some practical examples for producing mask patterns of micro - lens array are given in the end

    最後給出生成微透鏡列陣掩模圖形的實例。
  17. Abstract : in view of the manufacturing method of continuous micro - optical elements with grayscale mask, the critical steps such as converting from element structure to gray - scale patterms, correction of gray - scale patterns, digitalization of gray - scale patterns and patlerns coding are presented

    文摘:針對利用灰度掩模製作連續微光學元件的方法，介紹了從元件結構到灰度圖形的轉換，灰度圖形的修正，灰度圖形的數字化以及圖形編碼等關鍵步驟。
  18. We propose a new system architecture incorporating a prior model to handle this problem. we implement an effective preprocessing method to extract gray signature traces by using a two - level signature mask, which is obtained through local contrast enhancement, adaptive enthresholding, dilation, and bridge operations

    本文首先改進並實現一套針對簽名掃描圖像特點的預處理方法，包括局部對比度增強、自適應二值化、膨脹運算、連接運算等操作，提取出二值化簽名掩模，進而從原掃描圖像抽取灰度簽名軌跡。
  19. For practical opc applications, csplat is not suitable for intensity calculation on huge amount of sparse aerial points, hence a fast algorithm of sparse aerial image intensity calculation for lithography simulation is derived in this paper based on the theory of principal waves

    但是在opc等應用中，為了尋找合適的掩模補償圖形，必須迭代計算大量的空間稀疏分佈的試探點成像，用splat來處理這種稀疏空間點並不合適。
  20. Combined with the summarizable analysis of the existing roi detection techniques, an openness roi automatic detection algorithm is proposed. the test results show that the algorithm is efficient. then, based on the analysis of two roi coding algorithms, combined with the characteristic of detection results, a fast roi mask generation algorithm is designed

    結合對現有roi檢測演算法的總結分析，本文提出了一種用於遙感圖象的roi自動檢測演算法，測試結果驗證了該演算法的有效性;然後，在對兩種roi編碼演算法深入研究的基礎上，結合本文檢測結果的特點，設計了一種roi快速掩模產生演算法，該演算法優于jpeg2000的roi掩模產生演算法，極大地減少了roi編碼時間。
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