掩模 的英文怎麼說

中文拼音 [yǎn]
掩模 英文
mask
  • : 動詞1 (遮蓋; 掩蔽) cover; hide 2 (關; 合) shut; close 3 [方言] (被卡住) get squeezed [pinch...
  • : 模名詞1. (模子) mould; pattern; matrix 2. (姓氏) a surname
  1. Chrome thin films for hard surface photomasks

    硬面光掩模用鉻薄膜
  2. Hard surface photomask substrates

    硬面光掩模基板
  3. Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )

    林華, "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ,博士論文,導師:李立峰( 2006 )
  4. The prospect for the maskless lithography technology

    掩模光刻技術的前景
  5. The mask acts as a low frequency spatial filter whose effect is to enhance rendition of fine detail.

    掩模就象一個低頻空間濾波器,其效果是增強細節的重現。
  6. The beam division method in maskless laser interference photolithography can be divided into wave - front division and amplitude division

    摘要無掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。
  7. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝型,有助於開發由成品率驅動的版圖設計工具,自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  8. Act of moving a mask or reticle to match up alignment marks

    對準,調整掩模和晶片之間的位置。
  9. Test method for calibration verification of laser diffraction particle sizing instruments using photomask reticles

    用光掩模原版校準檢驗激光繞射粒子定尺寸儀器的試驗方法
  10. At first, double random phase encoding techniques are looked back and its improved methods are introduced in detail. in connection with characteristics of spherical wave gene and function of phase mask, one random phase encoding techniques are proposed with spherical wave based on 4f system

    本文首先對雙隨機相位加密技術進行了回顧,並對它的一些改進方案的特點作了詳細介紹,並在此基礎上,根據球面波相位因子的特點和相位掩模在加解密中作用,提出了一種利用球面波照射4f系統的單隨機相位編碼加密的新方法。
  11. We have contrasted several methods on fabrication of passive matrix oled, then we mainly discuss two fabricating methods, one is the precise mask method, the other is the barrier wall method. we find that the barrier wall method to fabricate the passive matrix oled ( pmoled ) has the advantages of high resolution, simple process and no crosstalking problem, so the barrier wall method is the good one to fabricate pmoled. in this paper we adopt the both methods, and we have successfully fabricated the pmoled

    分析和對比了實現無源矩陣有機電致發光顯示器件的幾種方法,著重介紹了採用精密掩模技術和障壁技術等技術方案,來製作和設計無源矩陣有機電致發光顯示器件,其中採用障壁技術方案製作的器件具有解析度高、工藝簡單容易實現、器件的交叉效應少、成本低等許多優點,是一種可行的製作無源矩陣有機電致發光顯示器件的方案。
  12. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件,本論文設計並試驗了器件的製作的全部工藝,包括波導薄膜的沉積,掩模的設計製作,光刻,濺射金屬薄膜,剝離法製作金屬掩模,干法深刻蝕,矽片切割,端面磨拋,波導對準和性能測試。
  13. The theoretical research, computer simulation and experimental results analysis show that maskless laser interferometric lithography and holographic lithography have the characteristics of large field of view, high resolution, distortionless, relatively simple system structure, low costs and convenient realization way. they have a broad application prospect

    激光干涉光刻技術研究四川大學博士學位論文理論研究、計算擬和實驗結果分析表明,無掩模激光干涉光刻和全息光刻具有大視場、高解析度、無畸變、系統相對簡單、成本較低,實現方便等特點,具有廣闊的應用前景。
  14. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性,分別以ar氣和chf3為工作氣體,研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量,束流密度和離子入射角度的變化關系,得到刻蝕速率與影響因素的擬合方程,為掩模的製作工藝路線提供了實驗依據和理論指導。
  15. Kohler illumination was used in proximity lithography, and a fly ' s eye lens was adopted to form multi - point source in order to uniform the light intensity on the mask plane

    摘要接近式光刻中一般採用柯勒照明系統,並採用蠅眼透鏡形成多點光源均勻掩模面的光場分佈。
  16. The second is about verification of alternating psm manufacturability and this part introduces a new method based on standard cells to resolve the phase conflicts, including for dark field and for clear field. the method has the capabilities of verifying standard cell layout, locating features with phase conflicts and giving out suggestion for modification

    第二部分針對由傳統方法設計出的版圖不能滿足交替移相掩模要求的問題,介紹了一種基於標準單元的交替移相掩模可製造性驗證與設計的演算法,包括針對暗場和亮場兩種不同環境版圖的演算法。
  17. The principle, theory, realizing methods for holographic lithography as well as the pattern transfer mechanism among the traditional photomask - hologram mask - resist have been deeply investigated. an experimental system with total inner reflection wavefront conjugation holographic lithography using right angle prism and refractive index matching liquid is designed and built, and the experimental research is carried out

    對全息光刻的原理、理論、實現方法及傳統光掩模?全息掩模?抗蝕劑圖形傳遞機理進行了深入的研究,設計和建立了採用直角棱鏡和折射率匹配液的全內反射波前共軛全息光刻實驗系統,進行了實驗研究。
  18. Specification for round quartz photomask substrates

    圓形石英玻璃光掩模基板規范
  19. Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.

    光刻技術應用到集成電路製造中,就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。
  20. Fabrication of continuous relief mask for diffractive plane focus lens

    連續型平面衍射聚光透鏡掩模的製作
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