摻硼 的英文怎麼說

中文拼音 [chānpéng]
摻硼 英文
boron doping
  • : 摻動詞[書面語] (持; 握) hold
  • : 名詞[化學] (非金屬元素) boron (b)
  1. The spectroscopic properties of eu3 - doped borate glasses

    酸鹽玻璃的光譜性質研究
  2. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與雜劑濃度換算規程
  3. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝,研究了摻硼金剛石膜成核和生長的影響因素,初步優化了沉積摻硼金剛石膜工藝參數,同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  4. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化薄膜的成核和生長機理,氮化薄膜的n型雜機制和bn型)侶i …型)異質結的電流輸運機制進行了探討。
  5. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示,單步高溫熱處理時重摻硼樣品不能形成潔凈區;降溫退火中,降溫速度較為緩慢( 3 / min )時能生成一定量的氧沉澱,但沒有潔凈區形成;普通高?低?高三步熱處理過程中,形成明顯的潔凈區,但相對輕樣品而言,潔凈區較窄,氧沉澱密度明顯偏高,說明重摻硼樣品吸雜能力強。
  6. It is demonstrated that edm method can effectively process b - doped diamond film

    證實了摻硼金剛石膜是可以電加工的。
  7. Finally, the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper

    最後文章還系統研究了快速熱處理( rtp )對重摻硼硅單晶中氧沉澱的影響。
  8. Doping properties of mgb2 superconductor

    化鎂超導體的雜性質
  9. Synthesis of industry diamond using pure iron catalyst

    摻硼金剛石的高溫高壓合成
  10. Boron - doped silicon nanowires grown by plasma - enhanced chemical vapor deposition

    等離子體增強化學氣相沉積法實現硅納米線摻硼
  11. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示,對于普通輕矽片能形成明顯的很寬的潔凈區的rtp預處理工藝,應用於重摻硼樣品時沒有潔凈區形成,所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片,的大量雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍:直拉重摻硼硅單晶中氧沉澱的研究促進效果;大量空位的引入,有利於釋放氧沉澱生長過程的內應力,適當增加重摻硼樣品氧沉澱密度,減少其尺寸,並伴有層錯生成。
  12. Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon

    鍺對重摻硼直拉硅中氧沉澱的影響
  13. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上,我們認為在重摻硼硅單晶生長過程中, bmon ( m , n 1 )復合體或b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成,且在隨后的退火過程中能穩定存在,作為氧沉澱形核的核心,從而促進了氧沉澱,減小了大直徑硅單晶中void缺陷的尺寸,增加其密度。
  14. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面,在相同的晶體生長條件下,重摻硼硅單晶氧含量升高,氧沉澱被增強,能形成有效吸雜點,提高矽片機械強度,抑制void缺陷,有利於提高ulsi的成品率。
  15. In order to improve its machining abilities and finally manufacture it by edm method, diamond film has been doped boron

    為改善eacvd金剛石膜的可加工性,實現金剛石厚膜的電火花加工,對金剛石膜進行了摻硼
  16. 4. the machining mechanism was investigated. it is comprehensive outcome of melting, gasification, oxidation and surface graphitization

    研究了電火花加工摻硼金剛石膜的去除機理,它是熔化、汽化、氧化、表面石墨化等綜合作用的結果。
  17. Edm method was adopted to process b - doped diamond film and the process was studied. the morphology and composition of the machined diamond film was analyzed by sem and raman. surface roughness was measured by surface roughness tester

    研究了電火花加工、電火花拋光和線切割加工摻硼金剛石膜工藝,對加工后的膜進行了sem分析、 raman分析和已加工表面粗糙度分析。
  18. In this paper, firstly, the effect of heavy boron - doping on oxygen precipitation was investigated. after annealed at different conditions, it is found that oxygen precipitation is enhanced by heavily boron doping, especially at high temperature

    本文研究了直拉重摻硼單晶硅的氧沉澱行為,著重研究了直拉重摻硼硅單晶中的氧沉澱的熱處理、內吸雜、 rtp處理等性能。
  19. In this part, the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly, it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells. then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature

    文中首先介紹了摻硼單晶硅太陽電池的光照衰減問題及衰減機制,然後以p型摻硼單晶硅為實驗樣品,經過不同溫度的熱處理,對影響光衰減的主要因素、氧進行了研究。
  20. Fabrication equipment and theory of b - doped diamond film were introduced. mechanical systems were studied and electric and control systems were designed. experimental results show that the equipment can deposit b - doped large area high - quality thick diamond film under the control system

    研究了摻硼金剛石膜設備及其原理,研究了機械繫統,設計了電氣系統和控制系統,系統運行表明該設備在控制系統監控下沉積出高質量大面積的摻硼金剛石膜。
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