放入晶種 的英文怎麼說

中文拼音 [fàngjīngzhǒng]
放入晶種 英文
seeding
  • : releaseset freelet go
  • : Ⅰ動詞1 (進來或進去) enter 2 (參加) join; be admitted into; become a member of 3 (合乎) conf...
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 種名詞(姓氏) a surname
  • 放入 : introduction; enchase
  1. A high efficiency dual - band rf power amplifier has an output and / or input of a high frequency transistor well terminated at the second harmonic frequency for dual - band operation

    本發明乃一高效率雙頻射頻功率大器,提供高頻電體的輸出端與?或輸端于雙頻操作中有良好的二階諧波終止。
  2. The exportation resistance of a device work device with what link after loading the resistance s the certain connections for should satisfying, in order to prevent mount to load the appearance produce the obvious influence. with each other connect to say to electronics equipments, for example after signal connect the enlarger, ex - class to connect class, only behind first - degree importation resistance before larger than first - degree exportation resistance 5 - 10 times are above, can think the resistance to match good ; connect the box come saying, electronics tube the machine should choose to use with for the enlarger its output to carry the mark to call the resistance the box for, but transistor enlarger then have noing this restrict, can take officing why resistance of equal or approximate box

    一件器材的輸出阻抗和所連接的負載阻抗之間所應滿足的某關系,以免接上負載后對器材本身的工作狀態產生明顯的影響。對電子設備互連來說,例如信號源連大器,前級連后級,只要后一級的輸阻抗大於前一級的輸出阻抗5 - 10倍以上,就可認為阻抗匹配良好對于大器連接音箱來說,電子管機應選用與其輸出端標稱阻抗相等或接近的音箱,而體管大器則無此限制,可以接任何阻抗的音箱。
  3. Liquid crystal tunable filters as an important device of wavelength division multiplexing and dense wavelength division multiplexing systems is caused attention by research department, especially many foreign research institute are studying it. but in our country its study is lag. and normal incidence of the crystal is almost the case, because the liquid crystal box is very thin, the field angle may be large and the pose of liquid crystal box may have impact on the measuring result. so, study in such subject, especially the liquid crystal box ' s position angle, is academic and valuable

    改進液電光可調諧濾光片的措施的實現,使得液調諧濾光片成為一很有應用前景的電光調諧濾光片,特別是用於光纖通信中的波分復用系統和密集波分復用系統,將使光纖的傳輸客量大大增加目前國外在這方面的研究進展很快,而國內在這方面的研究比較薄弱,而且通常採用光線正人射體進行研究,由於液盒很薄,視場角可以很大,液盒的擺對測量結果影響很大,因此對該器件進行深的研究,討論液盒的方位角影響是很有必要的。
  4. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn體的原因;引脈沖輝光電等離子體增強pld的氣相反應,給出了提高薄膜態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引輔助氣體h _ 2 ,得到了含n量為56at的態cn薄膜;探討了cn薄膜形貌、成分、體結構、價鍵狀態等特性及其與氣體壓強和電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高態碳氮材料的生長速率。
  5. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文( 3 )利用陽極氧化法在單硅基底上制備了多孔硅自支撐膜,並首次將這具有連續多孔結構的硅材料用作了理離子電池的陽極材料,考察了這納米級硅陽極的儲鉀性能和充電過程,分析了材料結構對其儲理行為的影響;另一方面,利用這電池充電過程在多孔硅中電化學引了不同點綴程度的輕金屬鉀元素,考察了鉀點綴對多孔硅自身結構,及至性質所帶來的影響,提供了一通過電化學方法插埋離子從而連續調整多孔硅發光性質的有效方法。
  6. The chip is accomplished in the full cooperation with other team members, the author pays particular attention to the analysis of the whole chip architecture and three sub - block design : transconductance amplifier ( ota ), voltage reference and current reference. based on existed technologies, a new high order temperature compensated voltage reference and a creative current reference with high order temperature compensation are shown respectively. the author simulated all the sub - block and whole chip by hspice

    元的設計是由小組成員共同完成,本人主要負責了總體電路的分析、聯合模擬驗證及以下三個子電路的設計: 1 、跨導大器,詳細分析了bandgap跨導大器輸級的動靜態特性及其優缺點,並結合系統要求,設計了一與cmos工藝相兼容、可替代bandgap跨導大器的低壓共源共柵跨導大器。
  7. Advanced fpga technology is introduced to improve the integration of digital circuits, and all digital circuits in the original module are integrated in the fpga chips, which could not only reduce the cost, but also improve the reliability and measurement precision of the circuits. high speed digital signal processor ( dsp ) is selected as the coprocessor instead of scm ; it can receive all kinds of commands sent from vxi, analyze and execute the commands, harmonize each section of the module and process the data. higher - conversion - speed comparator chip is adopted to convert the input signals being measured into square waveform signals which could be identified by fpga chip ; it can expand the measurement range of frequency dramatically

    本文在原有vxi總線四通道計數器模塊的設計基礎上,通過對原模塊缺陷的分析,採用一些新的技術和新的電子器件來重新設計該計數器模塊:採用最新的fpga技術來提高數字電路的集成度,將原模塊中的所有數字電路全部集成在fpga元中,這樣不僅能節約成本,還能提高電路的可靠性和測量精度;採用高速的數字信號處理器( dsp )取代原有的單片機作為協處理器,來接收vxi發來的各命令,分析命令、執行命令、協調模塊各部分的工作以及對數據的處理;採用轉換速率更高的比較器元將輸的被測信號轉換為fpga元能夠識別的方波信號,能極大提高測量頻率的范圍;採用d / a轉換元和隔離運算大器得到隔離通道所需的比較電平,該比較電平值能夠根據實際需求進行設置,能增強模塊的使用靈活性。
  8. Sunday, october 28, 2001 twenty juvenile green turtles were tagged, microchipped and released to the sea by the agriculture, fisheries and conservation department ( afcd ) and ocean park as a long - term monitoring programme to conserve this highly endangered species

    漁農自然護理署(漁護署)及海洋公園已將二十隻被夾上標志及植微型片的綠海龜生,並展開長期的監察計劃,以存護這高度瀕危動物。
  9. This article made a deeply research concentrated on the application of source code exploitation c / os, which is widely used in the embedded operation system, on the spca 720a

    本文主要對嵌式操作系統中的一應用較為廣泛的、源代碼開的os ? c os在spca720a元中的應用做了深研究。
分享友人