放射狀生長 的英文怎麼說

中文拼音 [fàngshèzhuàngshēngzhǎng]
放射狀生長 英文
radial growth
  • 放 : releaseset freelet go
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 放射狀 : circular cross sections
  • 放射 : radiate; emit; blas; radiation; emission; shooting; shedding; abjection; emanation; effluence
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. Accordingly avoided the competition among ramets effectively. their rhizomes developed root system at first. it was easier for roots to live through the winter in the alpine region with short growth season and was propitious to individual plant to survive

    黃帚橐吾和箭葉橐吾的分枝角度多呈0 、 180放射狀格局，有效避免了分株間的競爭；同時在生長季節短高寒地區，分株先形成根系，以根系過冬更有利於分株的成活，是適應對策之一。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. Rheed is a powerful tool to monitor and analyze thin films growth dynamically. the growth modes ( layer - by - layer mode, stranski - krastanov mode, 3d mode, texture, and growth modes transition ) and strain relaxation behaviors ( by measuring and calculating the spacing between chosen diffraction dots or streaks ) can be tracked by rheed from its diffraction patterns and intensity oscillations

    從生長模式上看，可以分析如層狀生長，層島結合生長，島狀生長，織構以及這幾種生長模式的轉變過程;從監測應變釋放上看，可以通過精細分析衍射點的間距得到具體的應變釋放過程。
  4. The extracellular matrix plays important roles in the cell behavior in vitro and in vivo. matrigel were widely used to induce differentiation of variable cell types. cultured in the matrigel, the cells aggregated together and formed tube - like structure

    將培養的lepcs接種于鋪有matrigel基質膠的培養皿后，細胞很快聚集成團並向四周放射狀生長出許多管狀結構，在電鏡下可觀察到細胞團中包括膽管樣結構。
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