放氣反射 的英文怎麼說

中文拼音 [fàngfǎnshè]
放氣反射 英文
deflation reflexes
  • : releaseset freelet go
  • : Ⅰ名詞1 (氣體) gas 2 (空氣) air 3 (氣息) breath 4 (自然界冷熱陰晴等現象) weather 5 (氣味...
  • : Ⅰ名詞1 (方向相背) reverse side 2 (造反) rebellion 3 (指反革命、反動派) counterrevolutionari...
  • : Ⅰ動詞1 (用推力或彈力送出) shoot; fire 2 (液體受到壓力迅速擠出) discharge in a jet 3 (放出) ...
  1. During those hours radioactive xenon gas built up in the reactor.

    在這幾個小時中,體氙在應堆中聚集增多。
  2. The most common method to "pump" a gas laser--that is, to invert the population in the states that give rise to light amplification--is to use a gas discharge.

    「發體激光(也就是轉能產生光大的那些狀態的粒子數)的最普通方法是運用電。
  3. Gaseous radioactive waste processing systems for light water reactor plants

    輕水應堆性廢物處理系統
  4. The research of this paper includes : ? high - speed photography and flash x - ray radiography are both used to capture the process of al shell ' s great deformation under low pressure. front illuminations are used to get the development of the fracture on the al shell. the relative energy release is analyzed from overpressure curves measured with some sensors

    本文的研究內容主要包括: ?在受試炸藥經歷低應力大變形過程的susan試驗中,同時採用高速攝影、閃光x線照相對彈體的撞靶過程進行了拍攝,得到了殼體膨脹變形過程圖像,並使用前照明技術觀察到了鋁殼表面產生的裂紋及其發展變化過程;從壓力傳感器測量的空沖擊波超壓曲線,獲得應釋總能。
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光電等離子體增強pld的應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為體並引入輔助體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與體壓強和電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種應過程的競爭結果;採用光學發譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和應過程的影響規律,給出了cn薄膜沉積的主要應前驅物,揭示了cn薄膜特性和等離子體內應過程之間的聯系;採用高壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  6. Nuclear power plants ; radiation monitoring equipment for accident and post - accident conditions ; part 5 : radioactivity of air in light water nuclear power plants

    核電站.事故中和事故后輻情況的監控設備.第5部分:輕水應堆核電站中的空
  7. When cosmic rays enter the atmosphere, they interact with nitrogen, oxygen and other atoms in the upper atmosphere and produce a large assortment of secondary particles, including radionuclides such as tritium and carbon - 14, neutrons, protons, electrons, mu

    宇宙線進入地球大層后,會與大高層的氮氧等原子核發生應,產生氚碳- 14等性核素及中子質子電子介子介子等次級粒子。
  8. When cosmic rays enter the atmosphere, they interact with nitrogen, oxygen and other atoms in the upper atmosphere and produce a large assortment of secondary particles, including radionuclides ( such as tritium and carbon - 14 ), neutrons, protons, electrons, mu

    宇宙線進入地球大層后,會與大高層的氮、氧等原子核發生應,產生氚、碳- 14等性核素及中子、質子、電子、介子、介子等次級粒子。
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