整流二極體 的英文怎麼說
中文拼音 [zhěngliúèrjítǐ]
整流二極體
英文
alternate diode-
However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less
在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。Vil gmagyars g _ hajl ka n h ny k p az pusztaszeri ki ll t sb l : magyarorsz g kir lyai, uralkod i, csal df i, c merei, t ? rt nete, t rk pek, mer tett pap r, plak t
常州星光電子有限公司生產整流二極體引線，整流橋堆引線、數碼管引線、電感引線、電容器引線、耐熱合金圓銅線、高電導銅包鋼復合線纜，高精度圓銅線、鍍錫圓銅線。Semiconductor discrete device. detail specification for silicon rectifier diode for type 2cz101
半導體分立器件. 2cz101型硅開關整流二極體詳細規范Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz73
半導體分立器件. 2cz73型硅開關整流二極體詳細規范Semiconductor discrete devices. detail specification for type 2cz10 silicon switching rectifier diode
半導體分立器件. 2cz10型硅開關整流二極體詳細規范Semiconductor discrete device. detail specification for silicon switch - rectifier diode for type 2cz75
半導體分立器件. 2cz75型硅開關整流二極體詳細規范Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz74
半導體分立器件. 2cz74型硅開關整流二極體詳細規范One is that the operation duty cycle can not be larger than 50 % because of the requirement for the transformer resetting. as a result, the voltage stress of the secondary diode is high, which limits the usage of dfc in high output voltage application
但由於變壓器磁芯復位的需要，其工作占空比必須小於50 ，從而造成占空比利用率不高，變壓器副邊電壓高，副邊高頻整流二極體的電壓應力大。Semiconductor discrete device. detail specification for type 2cz30 silicon rectifier diode
半導體分立器件. 2cz30型硅整流二極體詳細規范Semiconductor discrete device. detail specification for type 2cz59 silicon rectifier diode
半導體分立器件. 2cz59型硅整流二極體詳細規范Semiconductor discrete device. detail specification for type 2cz58 silicon rectifier diode
半導體分立器件. 2cz58型硅整流二極體詳細規范Semiconductor discrete device. detail specification for type 2cz117 silicon rectifier diode
半導體分立器件. 2cz117型硅整流二極體詳細規范Detail specification for electronic components. ambient - rated silicon rectifier diode for type 2cz103
電子元器件詳細規范. 2cz103型環境額定硅整流二極體Detail specification for electronic components. ambient - rated silicon rectifier diode for type 2cz116
電子元器件詳細規范. 2cz116型環境額定硅整流二極體Detail specification for electronic components. ambient - rated silicon rectifier diode for type 2cz117
電子元器件詳細規范. 2cz117型環境額定硅整流二極體Semiconductor discrete device. detail specification for silicon rectifier diodes for types 2cz5550 through 2cz5554
半導體分立器件. 2cz5550 5554型硅整流二極體.詳細規范1 ) the transformer leakage inductance will cause surge voltage across the switches. two clamp circuits are combined to solve this problem : lcd clamp circuit, in which the voltage across clamp capacitor is no reverse ; flyback clamp circuit, which consists of an additional flyback winding coupled with the boost inductor and a diode connected to the output terminal
本文綜合了兩種箝位電路: 1 ） lcd箝位電路，箝位電容上電壓不反向; 2 ）通過增加一個與升壓電感耦合的反激線圈和一個連接到輸出電容的整流二極體，構成反激箝位電路。Technical specification of silicon avalanche rectification for motor vehicles
機動車用硅雪崩整流二極體技術條件Discrete semiconductor devices and integrated circuits - rectifier diodes
分立的半導體器件器件和集成電路.整流二極體Blank detail specification : case - rated rectifier diodes ; german version en 150009 : 1991
空白詳細規范.額定外殼的整流二極體分享友人