晶形沉澱 的英文怎麼說
中文拼音 [jīngxíngchéndiàn]
晶形沉澱
英文
crystalline precipitate-
Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process. by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled. a precipitate slow - release controlled method was designed in the synthesis of manganese selenides
在化學調控合成思想的指導下，運用已取得的調控合成的成功經驗，利用mnseo3沉澱緩釋放出mn2 +源和硒源，在調節反應溫度的基礎上，于同一反應體系成功地合成了mnse2和mnse的立方體和球形微米晶，實現了產物組成和維度的調控，並對它們的磁行為進行了研究。Environmental scanning electron microscopy ( esem ) observation of f2 mycelium cultured in liquid medium with 100mg / l of cadmium showed that there were crystalline precipitations attached to the surface of f2. transmission electron microscopy ( tem ) and energy - dispersive analysis microscope ( edam ) examination revealed that there were many granules with high content of cadmium around the cell wall
F2在100mg l鎘濃度下培養后，經環境掃描電鏡（ esem ）觀察顯示，菌體表面有較大晶體狀沉澱物；透射電鏡（ tem ）和能譜分析（ edam ）表明，細胞壁周圍形成大量細小的高鎘含量沉澱物。By infrared spectrum study, the limonite ( feooh nh2o ) can be considered the main colorating mineral in the yellow and red jadeite, and the hematite is another colorating mineral in the red jadeite. the difference of color tone is due to the n value in the molecular formula feooh nh2o and the content of crystal water and adsorbent water. the iron ion came from the effloresced and eroded rocks, and formed fe ( oh ) 3 colloid reacted with the surface water
周圍礦床的風化蝕變為表生水提供了鐵質，形成弱酸性的含fe （ oh ） _ 3膠體的水溶液，表生水流經翡翠礦石時， fe （ oh ） _ 3膠體附著在巖石的表面，經過脫水結晶和吸附，形成褐鐵礦膠體，褐鐵礦膠體沿裂隙或鬆散的礦物顆粒進入翡翠巖石中，逐漸累積沉澱，形成次生色層。The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed
本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉澱在低溫750形核，重摻as硅單晶形核溫度較高，在750 - 900之間。The alloy strengthening mechanisms of solid - solution strengthening, distortion strengthening, fine - grain strengthening and deposition strengthening have been reviewed
摘要簡要介紹了固溶強化、形變強化、細晶強化和沉澱強化的強化機理。The precipitation sequence is. - supersaturated solid solution - stoicheometric " phase - growth. with the increase of the composition there is more characteristic of non - classical nucleation and growth, and the order parameter values of critical ordered nucleus decrease. the precipitation sequence is : supersaturated solid solution - nonstoicheometric ordered phase - stoicheometric " phase - growth
隨濃度增加，大部分亞穩區合金沉澱非經典形核長大的特徵增強，有序相臨界晶核序參數分佈曲線降低，且分佈更加平緩，沉澱序列為：過飽和固溶體非化學計量比有序相化學計量比相長大，非化學計量比有序相併非熱力學意義上的亞穩相，研究工作明確了這一點。Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。The distribution or the morphology of grain boundaries, dislocations and precipitates in crystalline silicon were observed by scanning infrared microscopy ( sirm ), and much useful information was obtained
通過紅外掃描儀觀察晶體矽中的晶界、位錯和不同金屬沉澱的分佈和形貌，並分析其相關信息。We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。Corresponding soluble salts have been chosen as raw materials and ammonia as precipitator. the optimum ph value is 8. 5 - 10 and higher concentration is helpful for crystal growth. the perovskite phase plzst can be synthesized at 750 by solid state reaction
合適的工藝條件為：選擇以各離子的可溶性鹽為原料，以氨水為沉澱劑，通過共沉澱得到白色無定型前驅體，最佳的ph值范圍為8 . 5 10 ，溶液的濃度越高越有利於固相反應合成中晶體的形成，適當的沉澱后處理過程如水洗、干磨能促進plzst晶體的生成。分享友人