晶格參數 的英文怎麼說
中文拼音 [jīnggéshēnshǔ]
晶格參數
英文
crystal lattice parameters-
Abstract : considering the second nearest - neighbor interaction and cubic, quartic anharmonic interactions simultaneously, we employ the multiple scales method combined with a quasidiscreteness approximation to calculate the lattice vibration. it is shown that the kind of nonlinear chain exhibits envelope soliton, envelope kink and envelope antikink soliton. these results can also be used to explain the experimental phenomena that the kink amplitude of the self - localized structure is determined only by the intrinsic properties of its lattices
文摘:同時考慮次近鄰諧振相互作用和三次方、四次方非諧相互作用，利用多重尺度結合準離散近似方法去計算晶格振動行為，發現一維非線性點陣中存在包絡孤子及正扭結型包絡孤子、反扭結型包絡孤子，解釋了自局域結構的幅度只取決于點陣中的固有參數的實驗現象Then the structure unit of hexangular lattice is found according to the principle of invariable symmetry. renormalization transformation is processed when we regard the structure unit and the growth model as graphs before and after transformation respectively. after choosing the 11 thermodynamic function fugacity as parameter, we can write out the partition functions before and after transformation and the formula of renormalization transformation
然後根據對稱性不變的原則，從整體晶格中選取結構單元，把結構單元和生長模型分別作為重整化變換前、后的圖形來進行重整化變換，選取熱力學函數易逸度為參量，寫出了重整化變換前後的配分函數和重整化變換關系式，求出了這一變換的不動點。Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations
超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit
結構參數對三量子阱超晶格單元結構伏安特性的影響Molecular dynamics simulation of size dependent cohesive energy and lattice parameter of pb nanofilms
納米薄膜的結合能和晶格參數的尺寸效應The reasons of cleavage in the crystal is analyzed and solved by strict control of growth parameters
分析了晶體產生開裂的原因，採用嚴格控制生長參數的方法予以解決。Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響After bamgal10o17 doped with sr, ca, the cell volume of each doped phosphors is shrunk and the crystal parameter c is decreased
摻雜少量的sr ， ca后，所得的熒光粉的晶格參數c變小，晶胞體積也隨之變小。Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins
在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。By the increasing of temperature, liyco3 - xo4 was further changed into licoo2 and lixco1 - xo, and then licoo2 formed by the reaction of lixco1 - xo with li2o. the reaction that produces licoo2 is almost completely done at 700, although some remaining li2o and li2co3 present as a partially amorphous film dispersed on the surface of licoo2, which can accelerate the growth of licoo2 crystallites. however, when temperature is higher than 850, some of licoo2 begin to decompose into the solid solution phase of liyco2 - yo2 and lixco1 - xo, and damaged its own crystal structure
制備licoo _ 2的合成反應中licoo _ 2的微結構不斷發生變化，隨著焙燒溫度升高， co _ 3o _ 4晶粒逐漸減小， licoo _ 2晶粒和顆粒逐漸長大，晶格內部缺陷減少， licoo _ 2晶格趨于完整，在焙燒溫度為850時licoo _ 2晶粒達到最大值；焙燒溫度低於700 ，晶胞參數a隨著焙燒溫度上升而減小，晶胞參數c隨著焙燒溫度上升而增大；而高於700則晶胞參數基本保持不變。Many important properties of semiconductor devices are relevant with their resistivity, which brings forward strict demands to the uniformity of the resistivity. especially micro - area ' s characteristics attract extensive attention. under this background, four - point probe measurement technique requires a new development
許多器件的重要參數與電阻率有關，因此這對晶體電阻率的均勻性，電學特性提出了更為嚴格的要求，特別是微區的電特性和均勻性引起了人們的廣泛關注。For problems of vertical transport in the superlattice at fixed d. c. bias voltage, ode45 is optional. for problems of vertical transport in the superlattice with the increasing bias voltage and the relatively higher doped densities, ode15s is optional
針對較高難度問題，即研究偏壓從零線性上升而且摻雜參數v較大時的超晶格縱向輸運問題（ du / dt （ 0 ） ，一般首選ode15s 。分享友人