晶格取向 的英文怎麼說
中文拼音 [jīnggéqǔxiàng]
晶格取向
英文
lattice orientation-
A ) the orientation of hbn on si ( 100 ) was dominated intrinsically by the crystalline habit and the lattice mismatch between the substrate and films. the former was dominated by the periodical bond chain ( pbc ) theory, while the latter was in relation with the stress and strain
A ） hbn在si （ 100 ）表面的取向受hbn自身結晶習性和它與襯底間的晶格匹配關系的控制，前者是受周期性鍵鏈（ pbc ）理論控制，後者與應力和應變有一定關系。The results show that the carbon / carbon composites with rough lamina have preferred orientation, higher anisotropy and graphitization degree than the carbon / carbon composites with smooth lamina
結果表明：具有粗糙層熱解炭的炭炭剎車副由於其晶格結構較為完善，生長組織擇優取向度和各向異性度均高於含有光滑層結構熱解炭的炭炭剎車副。Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響The xrd results show that the sputtered lcmo film grains are grown epitaxially, when the lattice mismatch between film and substrate is small. the lcmo thin films grown on sto substrates show an in - plane tensile stress
Xrd的研究結果表明，當基片與lcmo薄膜間的晶格失配度較小時，薄膜和基片具有一致的晶格取向，薄膜具有較好的外延結構特徵。And, the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate
而且，隨著膜厚的增加，處于底層的膜層起到緩沖層的作用，逐漸改善著薄膜與襯底之間的晶格失配，從而使得sbn薄膜在（ 001 ）方向的優先取向性越來越好。Once projected along [ 001 ] p or [ 0 - 11 ] sj, the planes ( 111 ) si and ( 110 ) p have early 4 ? angle as confirmed by hrem. we also show that no planes with low idices between the two lattices are parallel. therefore, epitaxy growth on ( 100 ) sj corresponding to ( 100 ) p ), or ( 111 ) sl ( corresponding to ( 110 ) p ) would be very ifficult under the optimum orientation relationship because of the slight but efinitely present deviation angles
我們還了解到兩種晶格間不存在完全平行的低指數晶面，當採用最佳取向外延生長時，無論是選擇（ 111 ） s ； （與（ 110 ）肥配）或（ 100 ） s ； （與（ 100 ） p相匹配）都很困難，因為1 ） s ；與豆0 ）和o0o兒與o ）間總是有一定的轉角，這就很容易形成界面臺階，惡化界面狀況。分享友人