晶格失配 的英文怎麼說

中文拼音 [jīnggéshīpèi]
晶格失配 英文
lattice mismatch
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 配 : Ⅰ動詞1 （兩性結合） join in marriage 2 （使動物交配） mate （animals） 3 （按適當的標準或比例加以...
  1. Calculation of the lattice mismatch between semiconductor epitaxy and substrate

    半導體外延層晶格失配度的計算
  2. The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film

    晶格失配對異質外延超薄膜生長中成核特性的影響
  3. The investigation of structure by x - ray diffraction shows that crystal parameters changes clearly when percenting ca and la into pbtio _ 3, it was caused by the ca ion and la ion replaced the pb ion of a position in perovskite compound, that bring lattice mismatch and asymmetrical replace

    在pbtio _ 3中摻入la和ca可以有效改變薄膜的晶格常數，這是因為在abo _ 3型化合物中，鈣離子、鑭離子取代了a位的鉛離子，造成晶格失配和不對稱取代。
  4. As well, the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them

    同時， zno薄膜（ 002 ）方向上存在著內應力，內應力是由膜材料與基底材料之間的晶格失配和不同熱擴散系數造成的，退火可可使內應力的到不同程度的釋放。
  5. The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands

    氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。
  6. The different definitions of lattice mismatch are compared with each other

    摘要比較了晶格失配度的各種定義，建議統一使用同一定義。
  7. However, the simulation results of the superlattice with 4 % lattice mismatch show that the thermal conductivity increases monotonically with the period length

    而對于具有4 %晶格失配的超晶格模擬結果卻表明，超晶格導熱系數隨周期長度的增大而單調上升。
  8. These results indicate that lattice mismatch is the main reason why minimum thermal conductivity has not been observed in a large number of experimental studies

    這一研究結果表明，材料的晶格失配是大多數實驗研究中沒有發現超晶格最小導熱系數的主要原因。
  9. In the end thin film ybig was grown onto substrate ybilg. then the structure and component of these films were measured and anaslysed by the measurements such as xrd, sem, epma, etc

    Ybiig 、 ybig系列石榴石薄膜的生長、測試結果表明，晶格失配度對lpe外延成功與否起重要作用。
  10. This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics

    這種技術解決了外延生長難以解決的晶格失配問題，為改善器件結構及性能提供了巨大的潛力。
  11. The xrd results show that the sputtered lcmo film grains are grown epitaxially, when the lattice mismatch between film and substrate is small. the lcmo thin films grown on sto substrates show an in - plane tensile stress

    Xrd的研究結果表明，當基片與lcmo薄膜間的晶格失配度較小時，薄膜和基片具有一致的晶格取向，薄膜具有較好的外延結構特徵。
  12. In order to deal with large mismatch ( 14. 6 % at room temperature ) between gaas and insb, a insb buffer layer was deposited firstly at low temperature 350, followed by a insb epilayer being deposited at higher temperature 440

    為了克服insb與gaas間14 . 6 %的晶格失配度，實驗設計先低溫生長一定厚度的insb緩沖層，隨后升溫生長insb外延層。
  13. And, the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate

    而且，隨著膜厚的增加，處于底層的膜層起到緩沖層的作用，逐漸改善著薄膜與襯底之間的晶格失配，從而使得sbn薄膜在（ 001 ）方向的優先取向性越來越好。
  14. The heteroepitaxial growth of 3c - sic on si substrate not only unfurls the maturity of si process, but also incarnates the excellence of 3c - sic, so that it become for long researchful direction. due to the large lattice parameter mismatch ( ~ 20 % ) and the large thermal expansion coefficient mismatch ( ~ 8 % ), however, the 3c - sic / si study is very difficult

    然而，由於3c - sic與si之間存在較大的晶格失配度（約20 % ）和熱膨脹系數差異（約8 % ） ，因此， 3c - sic / si異質外延薄膜的制備非常困難，仍存在許多技術問題需要克服。
  15. Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can ? get through hetero - epitaxial growth

    利用鍵合技術可以集成晶格或晶向失配的材料，製造傳統外延生長技術不能製造的結構和器件。
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