晶片尺寸 的英文怎麼說

中文拼音 [jīngpiānchǐcùn]
晶片尺寸 英文
csb :chiscale ball grid array
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 片 : 片構詞成分。
  • 尺 : 尺名詞[音樂] （中國民族音樂音階上的一級 樂譜上用做記音符號 參看「工尺」） a note of the scale in ...
  • 寸 : Ⅰ量詞（長度單位） cun a unit of length （=1/3 decimetre）Ⅱ形容詞（極短或極小） very little; very ...
  • 晶片 : chip; crystal plate; wafer
  1. Zn power, se power and diethylamine was used as the sources in this method and nanocrystal znse powders were synthesized at 225. these powders have been identified as polycrystal znse with zinc blende structure by xrd. the size of particle is about 100nm ~ 200nm

    採用zn粉和se粉為原料，以二乙胺為溶劑，在225下得到了znse粉末， xrd結果顯示其為znse多晶粉末，從tem照片可看出其顆粒的尺寸約為100nm 200nm 。
  2. The limno2 synthesized by sol - gel method was orthorhombic phase and pmnm space group, with farthing impurity of mn2o3 。 the result of sem showed that the size of flake was about 1 ~ 2 m, the thickness of flake was about 50 ~ 100nm. the highest discharge capacity is 170. 7mah / g

    溶膠凝膠法所得limno2材料的xrd結果顯示，該材料為斜方晶系， pmnm空間群，有極少量mn2o3雜質; sem結果顯示其片層尺寸大約在1 ~ 2 m ，厚度大約為50 ~ 100nm 。
  3. The results indicate that ( a ) before heat treatment, with the increasing of substrate temperatures, content of lower valency ( tij + ) decreases, the stoichiometric proportion of o / ti in all samples is about 2 ; the films have amorphous incompact columnar fiber structure, and with the increasing of substrate temperature, the size of columnar fiber increases ; the films have good hyalescence in visible range and great absorbability at the wavelength of 350nm ; optical constants of the films are calculated from the transmittance spectrums in visible range by mathematical analysis of the orders of interference, the results show that the refractive ind

    研究結果表明， （ a ）熱處理前，隨著基片溫度的增加，薄膜中的低價氧化鈦含量逐漸減少，化學計量比趨于o ti = 2 ；薄膜具有非晶態不緻密的柱狀纖維結構，柱狀纖維的尺寸隨基片溫度的升高而增加;薄膜在可見光范圍內透明，在波長為35onzn時嚴重吸收，利用干涉級次法分析了薄膜的光學常數，結果表明，薄膜的折射率隨基片溫度的升高而增加，根據計算結果得到了tioz薄膜在不同基片溫度下的折射率色散曲線。
  4. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  5. An automatic flip chip bonder is a precision instrument used to align and bond one or more dies onto a substrate in semiconductor industry. it develops for the mass production of ic, mems and moems with small feature sizes and high precise bonding demands. an alignment system is one of the key components in flip chip bonders

    全自動倒裝貼片機（ flipchipbonder ）是半導體生產工藝中完成晶元和基底對準、鍵合的高精度自動化設備，適合於特徵尺寸小，鍵合精度要求高的ic （ integratedcircuit ） 、 mems （ microelectromechanicalsystem ） 、 moems （ microopticalelectromechanicalsystems ）等的大規模生產。
  6. Ultrathin wafer level chip size package technology

    超薄型圓片級晶元尺寸封裝技術
  7. During depositing, the matrix temperature increases, the crystal grain grows and the grain size increases

    薄膜沉積過程中，基片溫度升高，晶粒生長，薄膜晶粒尺寸增大。
  8. The versatile system is able to handle various substrate sizes ranging from 2 ” to 8 ” and can accommodate up to 75 wafers per run, depending on size

    這個多功能體能處理各種各樣晶片，尺寸范圍從2英寸到8英寸，根據晶片的尺寸大小，腔室內可容納達75片晶片每次。
  9. The performance of the pbg antenna using the new pbg cover together with a pbg substrate is studied by the fdtd method together with the pml boundary treatment. the numerical results show that a more focused beam radiated in the broadside direction is achieved. the gain of the pbg patch antenna in the forward direction is improved by about 6 db. the radiation directivity is improved significantly and reaches 11. 5 db, which is 0. 4 db less than the maximum value that is allowed physically for this size of the antenna ( this difference is about 4. 1 db less than the difference achieved by thevenot et al.,

    用fdtd方法並結合pml吸收邊界條件，我們對加了這種新的覆層結構並且基底鉆孔的復合結構電磁（光子）晶體貼片天線的性能進行了研究，結果證明加了這種新的電磁晶體覆層結構以後，天線的波束收攏很多，並且向前輻射的增益大大提高，與普通天線相比，天線的e面和h面方向圖上向前輻射的增益均提高了約6db ，另外，該復合結構天線的方向性系數達到了11 . 5浙江大學博士學位論文db ，與該物理尺寸天線的方向性系數的理論極限值（ 11 . 9db ）相差0 . 4db ，該差值比thevenot等人設計的電磁晶體覆層天線的相應差值減少了約4 . 1db ，比qiu等人設計的電磁晶體天線的相應差值減少了約1
  10. So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied

    圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。
  11. His team ' s sensors are engineered at the nanoscale ? the size of molecules ? and are cheap because they ' re etched out of flakes of silicon, the stuff of computer chips and beaches

    這種傳感器的尺寸在毫微級分子大小而且很便宜，因為它們都是用硅元素薄片（計算機晶元和沙灘的組成成分）作出來的。
  12. A modified definition of polarization resistance calculated from the equivalent circuit of eis make its value dependent on the grain size. in anodic polarization test ( sweeing and stair - steps ), the maximum ( critical ) current density increases while the passivation potential and breakdown potential lowers with the reduction of the grain size. fegsem images showed the grain growth and pitting corrosion of the nc copper surface, uniform corrosion in the mc copper surface and the broken passivation layer in both surfaces

    在陽極極化實驗（包括掃描法和臺階法）中，致鈍電流雖晶粒尺寸減小而增大，而致鈍電位和擊穿電位都隨著晶粒細化而降低。 fegsem照片發現了納米晶銅的晶粒長大和孔蝕，微米晶銅表面的均勻腐蝕，和兩種銅表面破碎的鈍化膜。
  13. Lot - wafers of similar sizes and characteristics placed together in a shipment

    批次-具有相似尺寸和特性的晶圓片一併放置在一個載片器內。
  14. In order to get strain from the channel, by process, deposit si3n4 at nmos and adopt the silicon - germanium epitaxy on source / drain by pmos, can effective improve nmos and pmos electronic characteristic

    中文摘要近年來，為了提升金氧半場效電晶體工作頻率及性能，尺寸不斷微縮，讓相同面積晶片可以擁有更多的電晶體數量。
  15. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  16. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  17. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  18. The microstruture of the varistor with nano zno was studied. the results show that nano additive reduces the size of zno grain, which leads to the evident improvement of the electrical properties of varistor

    因此，可以初步認為加入適量稀土或納米zno提高壓敏閥片的壓敏電位梯度，其原因主要歸結于減小zno晶粒尺寸。
  19. The evolution on particle morphology, microstructure, grain size and microstrain of the mixture of ti and al elemental powders during mm has been investigated. it was found that the nanocrystalline composite powders with extremely fine ti / al alternative lamellar structure ( lamella spacing about 0. 1 ~ 0. 5 m ) could be prepared by mm using proper processing parameters

    研究了ti 、 al單質元素混合粉在機械球磨過程中的顆粒形貌特徵、組織結構、晶粒尺寸以及微觀應變的變化規律，表明在適當的球磨工藝條件下可獲得具有極細層片間距（ 0 . 1 ~ 0 . 5 m ）的納米晶ti / al機械復合粉。
  20. Therefore, adding rare - earths oxides ( nd2os > ceo2 and la2o3 ) with appropriate content decreases the size of zno grain evidently and makes the grain size and distribution more homogeneous, then the zinc oxide varistor show outstanding comprehensively performance

    因此， ndzo3 、 ceoz和lazo3加入到氧化鋅壓敏閥片中，使zno晶粒尺寸減小，並使晶粒分佈更為均勻，從而改善了壓敏閥片的綜合電性能。
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