晶界分離 的英文怎麼說

中文拼音 [jīngjièfēnlí]
晶界分離 英文
grain-boundary separation
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  1. In this paper, oxid crystals were synthesized by the hydrothermal method, and the effects of the hydrothermal condition on shape and quality of crystal were studied by changing experimental temperature and mineralizer. on the base of these works the blue sapphire dopped with fe, ti and sapphire dopped with ti were synthesized. meantime, the effects of ti, fe - dopped on sapphire and what lead to the blue of sapphire were studied

    本文採用水熱法合成了- al _ 2o _ 3和zno晶體，通過改變溫度和礦化劑條件研究了水熱條件下溫度和礦化劑對- al _ 2o _ 3和zno晶體合成的影響；在此基礎上通過摻雜致色元素，合成了藍色藍寶石、鈦藍寶石，並研究了fe 、 ti等致色離子對藍寶石晶體界面形態和質量的影響，分析了藍寶石的致色原因。
  2. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  3. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  4. Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film

    第二章和第三章分別從引入離子轟擊和施加直流偏壓電場兩方面著重研究了外界條件作為輔助手段對非晶碳生長的影響。
  5. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  6. Combining the unstable heat conduction in crystal layer with heat transfer of undeveloped slug flow in a vertical tube, a time - progression model of crystal layer growth in the bubble column crystallizer pipe is proposed, the calculation results from the numerical method agree well with the experimental data. under certain operating conditions, the periodical arrival of gas plugs can cause crystallization and partial re - melting occur in the crystal - melt interface

    結合未充分發展彈狀流的傳遞特徵和晶層內不穩定導熱，提出了鼓泡塔結晶器管內晶層生長的時間級聯模型，與實驗值吻合良好.特定操作條件下，隨彈狀泡的到來和離去，結晶界面可發生結晶-部分重熔
  7. Abstract : the development of stealthy materials in the past several d ecades from the second world war up to now is comp endiously reviewed in this paper. recent study of new stealthy materials, suc h as ceramic materials and conducting polymer composites etc, is summarized from three areas of thermal resistance ， smart and plasma steal thy materials, and developing trend of the stealthy mat erials is also predicted in this paper

    文摘:簡單回顧了從二次世界大戰至今幾十年間，國外隱身材料的發展歷程；系統綜述了國外在陶瓷材料、導電高分子材料、晶須材料、納米材料、手征材料等新型隱身材料研究方面所取得的進展；從耐高溫隱身材料、智能隱身材料、等離子體隱身三個方面入手，重點介紹了國外近年來在隱身材料領域的最新進展；並且指出了隱身技術未來的發展方向。
  8. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  9. This system is developed based on high performance, low cost and many controllers inside of the embedded processor, and enlarged gpio for the plat of the hardware and software. this system is applied to the high - speed numerical control carving machine. show the operate interface by lcd, input the control code from the keyboard, the data is readed from the usb interface and store that in sdram

    本系統應用於高速數控雕刻機，以lcd為人機可視化操作界面，以編碼鍵盤為操作控制部分，以嵌入式處理器s3c44b0x晶元為核心，文件數據經usb口讀取u盤中的雕刻數據文件暫存於sdram中，經嵌入式處理器進行相關演算法處理，得出相應參數傳送到fpga ，由fpga控制輸出脈沖和脈沖間延時，通過高速光耦隔離（ 2mbit / s ）后輸出，控制步進電機的運轉。
  10. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  11. It is the especial congregate structure of polymer matrix that is necessary for the forming of three - dimensional interpenetrate network between the polymer and copper. the mma unites lead to the advantage of improving fiexibity of the film, destroying the formal arrangement of macromolecule chain in polymer and decreasing the degree of crystallization. the ita unites help the solvolyzed copper ion transfer in the film and benefite the forming and establishment of the networks of polymer matrix

    聚合物基體特殊的聚集態結構是互穿立體網路形成的必要條件，皿m的加入有利於破壞丙烯睹大分子鏈的規整性，使結晶度降低，提高聚合物的柔韌性，含親水基團的單體（ ita 、 as ）存在有利於降低離子遷移的界面能，提供溶劑化銅離子遷移的途徑以及聚合物基體網路結構的形成和穩定。
  12. We analyze the generation of external cavity frequency - doubling with knbo3 crystal theoretically. in order to get the second - order nonlinear conversion from 858nm to 429nm with knbo3, we use non - critical type - i phase - matching to avoid the walk - off effect the corresponding optimum focusing condition is as followings : double refraction parameter b = 0, focus parameter = 2. 84, optimum phase mismatch parameter = 0. 574. based on the theoretical analysis and numerical calculations, we obtain the ideal nonlinear conversion coefficient about 1. 45 % / w with crystal length of 7mm and 2. 07 % / w with crystal length of 10mm at the phase - matching temperature around 23. 50c

    根據對其倍頻原理及性能的分析討論，在用該晶體完成波長從858nm到429nm的二階非線性轉換時，採用非臨界相位匹配條件（此時無離散效應，對應的雙折射參數b = 0 ，共焦長度為= 2 . 84 ，最佳相位失配因子為= 0 . 574 ） ，在相位匹配溫度約為23 . 5時，理論上通過計算得到理想情況下非線性轉換系數約為1 . 45 / w （長度為7mm ） ， 2 . 07 / w （長度為10mm ） 。
  13. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
  14. After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform

    優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。
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