晶界反應 的英文怎麼說

中文拼音 [jīngjièfǎnyīng]
晶界反應 英文
grain boundary reaction
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 反 : Ⅰ名詞1 （方向相背） reverse side 2 （造反） rebellion 3 （指反革命、反動派） counterrevolutionari...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  1. In the hardware design, the paper completes modules ’ design like outside memory, patulous a / d, patulous d / a, rs232 communication, ecan communication, led control, keyboard control, distant control, emulation, reset, logic voltage switch, dsp supply power regulate and ac - dc power circuit, as well as room layout design like anterior panel, back panel etc. and dsp transfers data with peripheral equipments except outside memory using serial ports. besides, the whole circuit is configured in interrupt response. thus, it can meet system demand as well as take full advantage of tms320f2812 ’ s hardware resource. in the software design, the paper finishs programs like the interface programms intercommunicates with people, the distant control program, ad and da modules ’ control program, in addition, the paper select the velocity and acceleration state - feedback algorithm and is written in the program. the software design uses dsp integrate exploiting environment named ccs2. 2 of ti inc. as software instrument, and programs with the combination of c language and assembly language. moreover, in order to maintenance or modify the software expediently and shorten software ’ s exploitation time, the design adopt software modularization technique. finally, some air cylinder experiments are carried out to proved that the pneumatic controller is very practical

    在硬體設計中，本文完成了片外存儲器擴展、 a / d擴展、 d / a擴展、 rs232通信介面、 ecan通信總線介面、液晶顯示控制、鍵盤控制、遠程控制、模擬、復位、邏輯電平轉換、 dsp工作電源校正電路和ac - dc電源等模塊設計以及控制器前面板、後面板等的空間布局設計。其中dsp與除外部存儲器的外圍設備之間的數據傳送全部採用串口通信，同時系統電路配置成中斷響應方式，這樣既滿足了系統要求，又充分利用了tms320f2812的硬體資源。在軟體設計中，本文完成了人機界面功能模塊、遠程控制模塊、 ad擴展模塊、 da擴展模塊、速度和加速度狀態反饋的控制演算法的程序設計。
  2. Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper

    文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。
  3. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  4. Mgo and al2o3 can form mgal2o4 existing mainly on the grain boundary through solid phase reaction, which limited the migration of the grain boundary and thereby inhibited the abnormal growth of the alumina grain

    Mgo能與al _ 2o _ 3發生固相反應生成主要存在於材料晶界處的mgal _ 2o _ 4 ，限制了晶界的遷移，從而抑制了氧化鋁晶粒的異常長大。
  5. From an examination of the tensile behavior of cz ly12 alloys under different temperature and strain rate, two kinds of deformation and intergranular fracture behaviors were observed that were opposite to the characteristic strain rate range in fine - grained superplasticity. the mechanisms are described as follows. the high ductility achieved at high strain rate is generally attributed to the dominant role of gbs accommodating mechanisms, which is considered as dislocation creep within grains controlled by subgrains

    研究選用自然時效淬火態的ly12鋁合金，進行了一系列不同溫度和應變速率下的單軸拉伸試驗， 480下，觀察到與傳統細晶超塑性特徵區間相反的行為：較高應變速率下，動態再結晶使晶粒細化，促進了晶界滑移，亞晶界控制的晶內位錯蠕變是晶界滑移的主要協調機制。
  6. J. b. wang and g. w. yang, phase transformation between diamond and graphite in preparation of diamonds by pulsed - laser induced liquid - solid interface reaction, j. phys. : condensed matter 11 ( 37 ), 7089 ( 1999 )

    王金斌，楊國偉，脈沖激光誘導液-固界面反應合成金剛石納米晶中的結構相變模型，高壓物理學報， 13 ， 147 （ 1999 ）
  7. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  8. It was found that the interfacial bonding of 93w - ofc was both the joining action of ofc / w grains and that of ofc / ni - fe binders, whereas the joining of ofc to tc4 could be seen as the mutual intense diffusion effect between ofc / tc4 and as a result cu - ti intermetallic compounds were formed at the joint. the joining of tc4 - a1 and a1 - mb2 were also attributed to the result of diffusion between elements ti - al and al - mg respectively. on the other hand, residual thermal stress and stress - induced distortion were produced at the joint simultaneously due to the difference in thermal expansion coefficient of different welding " materials

    研究表明， 93w與ofc的界面連接是ofc與93w中w晶粒的連接以及ofc與93w中ni - fe粘接劑的連接共同作用的結果； ofc與tc _ 4連接界面的形成是由於ofc與tc _ 4之間發生反應擴散，並由此在二者接頭處生成了cu - ti金屬間化合物的中間相； tc _ 4 - al的連接與al - mb _ 2的連接則分別是其基體元素ti 、 al之間和al 、 mg之間元素互擴散的結果，另外，由於熱膨脹系數的差異，擴散焊接后在不同焊件的接頭處存在殘余熱應力並由此引起接頭的形變。
  9. The forming - nucleus drive power could form numerous little crystal nucleus under natural melting temperature. the formation of tic particles in the melt could be divided into two phases which was forming - nucleus and growth. the forming mechanism of tic was : melting ti first surrounded c, then ti melting in the alloy and c formed a complicated reaction mesosphere on the carbon surface

    根據熱力學及動力學分析，認為在碳顆粒界面處tic的形核率很高，形核驅動力足以在正常的熔煉溫度下形成眾多的小晶核；熔體中tic顆粒的合成可分為形核與長大兩個階段，其形核機制為：首先活性ti原子包圍c ，溶入合金中的ti與c在碳表面形成一復雜反應中間層，隨著反應進行， ti和c顆粒不斷減少，生成的tic不斷彌散分佈於熔體中；其長大過程伴隨著tic顆粒的相互堆砌、聚集和形態規則化。
  10. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  11. With a voltage operating, the flexoelectric effect for a nematic liquid crystal ( nlc ) cell has been investigated theoretically with an analytical approach, and the absorption of ions has not been taken into account. the equations and the boundary conditions of the nlc tilt angle 6 have been deduced

    文中假定液晶在界面處沒有離子吸附，導出了電場作用下指向矢傾角滿足的方程和邊界條件，以及撓曲電效應引起的表面能，該表面能在上下基板處形式相同但是符號相反。
  12. Ysialon and casialon glasses also form at the interface. if 0. 45 % wt sio2 is added in the paste, the tungsten paste has low sheet resistance and matching shrinkage of a1n green - sheet bodies. at this concentration of sio2 in the paste, a1n substrate is little porous at interface

    在陶瓷介質和導帶漿料之間的界面位置，有sio _ 2 、 aln ，以及aln的添加劑cao和y _ 2o _ 3存在，它們四種單質材料發生反應，在界面位置形成ysialon ， casialon玻璃相和casialo和ysio的晶相，提高了焊盤的附著力。
  13. The result of the xrd, sem and tem analysis show that the densification process was controlled by the mechanical of liquid phase sintering with the addition of mgo and ce02 as the sintering aid. the mgo - ceo2 would react with the sio2 which was on the surface of the silicon nitride particles to from silicate liquid phase to accelerate the densification

    通過xrd 、 sem 、 tem等測試結果表明，由於同時添加了mgo和ceo _ 2作為助燒劑，其緻密化過程為液相燒結，由燒結助劑和si _ 3n _ 4表面的sio _ 2反應形成低熔點的硅酸鹽相，促進燒結緻密化，冷卻后，在晶界形成玻璃體。
  14. It is credited with the ability to solve communication problems in relationships. it is believed to be good for meditation, dream awareness and channeling ability. some smoky quartz owners claim that it is a protective and a grounding stone

    聽說也有進口商是將白水晶經過鈷60放射線照射處理出來的，改變其內在分子的排列組合，進而導致微量的金屬反應，仍是業界頗能接受的種類。
  15. It was confirmed that the first reaction layer of tic with very fine crystal grains is due to the reaction ti + sic - tic + si. this reaction is a reaction - controlled one. however, the other reactions in the second step a re controlled by elements diffusion

    Scs一6sic / ti3ai復合材料的界面反應產物可多達6層，依次為:緊挨著纖維的晶粒細小的tic層、晶粒細小的tissi ;層、等軸晶粒的tic層、 ti3si層、 ti3aic層及ti5si3層。
  16. The results show that only the crystals that can react with pu display ptc effect, the adding easyly crystal show no ptc effect

    這說明只有參加化學反應的晶體才具有明顯的ptc效應，簡單添加型的晶體由於體系界面缺陷較大，不產生ptc效應。
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