晶粒界 的英文怎麼說

中文拼音 [jīnglìjiè]
晶粒界 英文
boundary of grain
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  1. Impurities tend to segregate at grain boundaries.

    雜質常常在晶粒間界偏析。
  2. Two area defects are twins and grain boundaries.

    有兩種面積缺陷，即孿生和晶粒間界。
  3. The globalization course was that the preformed texture recrystallized and became the granular equiaxed grain, when the temperature rose and the holding time prolonged, the granular grain melted at some area and at the liquid - solid interface the grain globalized at the role of the curvature overheated

    過程機制為：擠壓形變組織在加熱過程中首先發生再結晶長大變為顆粒狀等軸晶；隨溫度升高和保溫時間延長，等軸晶發生局部熔化，液固界面的曲率過熱使晶粒外形向球狀轉變。
  4. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  5. The results show that the solidification microstructure of high speed steel fe - 2 % c - 4 % v - 4 % mo - 5 % cr - x % w ( wt ) contains of martensite, retained austenite structure, and mc, m6c, m2c carbides, and mc / m2c complex carbides by xrd, sem and metallographs. most of the mc carbides locate in the cell and other carbides distribute along the boundary of the cell

    結果表明：經金相組織觀察、 x射線衍射和掃描電鏡分析， fe - 2 c - 4 v - 4 mo - 5 cr - x w合金系高速鋼凝固組織包含馬氏體基體、殘余奧氏體及各種類型的碳化物如mc型碳化物、 m _ 2c型碳化物、 m _ 6c型碳化物和mc m _ 2c類型復雜碳化物，大部分mc型碳化物分佈於晶粒內部，其它類型碳化物則沿晶界呈網狀分佈。
  6. As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications

    另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。
  7. It is found that the specific saturation magnetization decreases with the decrease of the nanocrystallites grain size. the dominating reason is the grain size of the nanocrystallites less than the critical size of the single magnetic domain

    發現對于純凈的納米晶粒來說，飽和磁化強度隨著晶粒線度的減小而減小，這主要是因為所制備的納米晶微粒的晶粒線度小於單疇顆粒的臨界粒徑。
  8. So re oxides has two form existence, one is concentrate on the matrix equiaxial crystal grain boundary as a micron particles and the other is distributed in matrix crystal dispersively as the nanometer particles compared the electron emission performance of mo - la2o3, mo - ; la2o3 - y2o3 and mo - la2c > 3 - sc2o3 cathode, the mo - la2o3 - sc2c > 3 cathode show excellent electron emission character

    上述研究表明不論是在稀土?鉬陰極還是在稀土?鎢電極中，稀土氧化物的存在形式有兩種，一種是微米級的顆粒偏聚于晶界處，另外一種是彌散分佈於基體晶粒的納米小顆粒。
  9. Presents the microstructure evolution in aluminum a nd copper after deformation by cold rolling in the strain range of 10 to 50 % red uction using tem and points out three types of dislocation structures are typica l and two of them are common for both materials and these two common types are f ound in non - cube grains and can be distinguished by crystallographic orientatio n of dislocation boundaries in the grains and the third type of structure is obs erved in cube grains, and concludes that grain orientation is important in deter mining the structure type but some other metallurgical parameters also have a ro le to play

    採用tem對冷軋多晶銅與多晶鋁的形變顯微組織演變進行了對比研究.結果發現：多晶銅及多晶鋁形變顯微組織中均含有三類典型的位錯結構類型，其中的兩種結構特徵在兩種材料中是相似的，這兩種類型結構存在於非立方取向晶粒，可通過晶粒中位錯邊界的晶體學取向加以區別，另一類型結構存在於立方取向晶粒；晶粒的晶體學取向決定了其形變顯微組織類型，但其它冶金學因素對顯微組織也有影響
  10. Sem, afm, epma micrographs indicate that pore size distribution of membranes is narrow ; thickness of membrane is about l - 2um and gradual interface between membrane and substrate is continuous and uniformity

    Sem分析發現膜面較為平整、無開裂且晶粒輪廓清晰，孔徑分佈較窄，膜厚大約在1 2 m之間，膜與基體的界面連續較均勻。
  11. ( 3 ) solid solution with good solid solution ability were acquired by solid soluting treatment for 25 min at 540 c, 560 c and 580 c, respectively, after that water quenching was carried on. in the case of 580 c, the coarseness of the precipitation at grain boundaries did not happen, equi - part 120 did not emerge at the intersection of three grains, these suggest that over sintering did not happen

    6013合金實驗熱軋板材經固溶處理後於180時效4小時達到峰值硬度； （ 3 ） 540 、 560 、和580固溶處理25min 、水淬，得到了固溶充分的固溶體， 580的情況下晶界析出相未粗化、三晶粒交界處的角度未出現等分的120 ，表明未發生過燒。
  12. The effect of hydrogen on the ductility of electroless copper deposit is primarily caused by molecular hydrogen contained in voids, particularly the type gb voids

    鍍層延展性降低的主要原因是由氫氣泡的缺陷效應，特別是第三類氫氣泡、晶粒邊界氣泡空穴。
  13. Often the vortex pinning can be increased by making the individual crystallites ( or grains ) of the material smaller, thus increasing the surface area associated with grain boundaries, where vortices get pinned

    這是因為晶粒邊界面積的比例，會隨著晶粒的縮小而增加，而渦流就是固定在晶粒邊界上。
  14. We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation. in general, hydrogenation is prepared after completing of tft, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise

    而通過氫化可以大大降低多晶硅薄膜晶粒邊界中的懸掛鍵和界面陷阱，從而顯著提高tft的場效應遷移率和開態電流，減少關態電流，提高tft的電學性能。
  15. The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region

    而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。
  16. The microwave magnetic sintering can not only lower the sintering temperature and shorten the sintering time, but also decrease the micro - grain size of magnets and make intergranular phase and grain boundary of main phase distributed well. the abnormal grain growth was found in conventional sintered ndfeb magnets, which may be due to the greater particle size and uneven distribution of powder, and higher sintering temperature and longer sintering time. of course, the abnormal grain growth would deteriorate the magnetic properties

    微波磁場燒結的不但降低燒結溫度，縮短燒結時間，而且使磁體整體加熱，受熱更均勻，因而磁體晶粒更細小，並且主相晶粒邊界趨于規則化，晶間相的分佈更均勻；在常規燒結的磁體中則出現了晶粒異常長大現象，造成這一現象的原因，一方面可能是燒結溫度過高或燒結時間過長，另一方面可能是磨製的粉體均勻性較差，存在的大顆粒被許多細小顆粒包圍，在燒結過程中，大顆粒不斷吞併小顆粒，逐漸長大，而異常長大的晶粒自然會導致磁體性能的惡化。
  17. We apply the system to the ultra - fine grain steel welding, the simulated mean grain size in cghaz agreed well with the corresponding independent experimental data. in this paper, three factors influencing the grain growth, the steep temperature gradient in haz. the grain boundary liquid and the precipitates particle, were studied specially using mc technique

    研究表明溫度梯度造成的「熱釘扎」現象和晶界液化現象都對靠近熔合線附近的晶粒長大有明顯的阻礙作用，對最終的晶粒大小分佈有重要的影響：而800mpa超細晶粒鑰中的tin粒子山于溶解溫度高，抑制奧氏體晶粒長大的效果十分顯著。
  18. Boundary of grain

    晶粒界
  19. Critical crystal growth

    臨界晶粒長大
  20. Critical grain growth

    臨界晶粒長大
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