晶面表示法 的英文怎麼說
中文拼音 [jīngmiànbiǎoshìfǎ]
晶面表示法
英文
crystallographic notation- 晶 : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
- 面 : Ⅰ名詞1 (頭的前部; 臉) face 2 (物體的表面) surface; top 3 (外露的一層或正面) outside; the ri...
- 表 : Ⅰ名詞1 (外面;外表) outside; surface; external 2 (中表親戚) the relationship between the child...
- 示 : Ⅰ動詞(擺出或指出使人知道; 表明) show; indicate; signify; instruct; notify Ⅱ名詞1 [書面語] (給...
- 法 : Ⅰ名詞1 (由國家制定或認可的行為規則的總稱) law 2 (方法; 方式) way; method; mode; means 3 (標...
- 表示 : show; express; mean; indicate; expression; presentation; signifying; remark; representation
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Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed
在改變e _ ( ag )腐蝕液的配方的基礎上,研製了新的腐蝕液,可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同( 110 )面之間的關系,方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的( 110 )面,經過表面處理,試制了探測器元件,對24lam有較強的響應。Sem results imply that the surface of thin films deposited by chemical bath method is correlate to the reaction conditions. surface of sns thin films deposited by chemical bath method are coarse than thin films deposited by chemical bath with ultrasonication method and successive ionic layer adsorption and reaction method
Sem結果顯示用常規化學浴方法所制備的薄膜樣品的表面形貌與反應條件有關,而用超聲波輔助化學浴和連續離子反應法制備的薄膜樣品的表面較之常規化學浴方法所得到的薄膜樣品表面晶粒細小均勻,緻密平整。A patch antenna with etched holes on the ground plane is also studied. the performance of the antenna at the resonant frequency is analyzed by using the fdtd method together with the pml boundary treatment. the results show that the surface waves are suppressed greatly, the bandwidth is improved and a 1 odb reduction on the sidelobe level is achieved at the 110 and 260 directions in the e plane
全面地研究了地面腐蝕周期圓孔結構的電磁晶體貼片天線在基波頻率處的性能,用fdtd方法並結合pml邊界處理技術對該天線所取得的研究結果顯示,本文設計的地面腐蝕型電磁晶體結構抑制了貼片天線中的表面波,增加了天線的帶寬,並有效地削弱了旁瓣,使天線的e面方向圖上110和260方向的兩個旁瓣被削弱了10db 。The results indicated that the dimension, shape and purity of base material could meet the functional demand of solid lubricant ; the thermal decomposition temperature of ptfe resin exceeds 400 c, but organic and inorganic packing filler added in ptfe made the water absorption rate of composite material increased, melting temperature and decomposition temperature decreased, in the meanwhile oxidative decomposition reaction was accompanied ; polar groups such as c = o, c - o - c and so on in the carbon fiber surface is advantageous to increase compatibility with other components and interlayer shearing strength ; uniform design experimental method could help to find the relationship between formula and frictional property by relatively small tests. the developing trend of each formula ' s friction coefficient could be showed by fitting curve ; the friction coefficient with no copper powder or graphite in formula was relatively big. this fact showed that copper powder and graphite should be used cooperatively ; it was found that when the ratio of copper powder to graphite by weight is 15 : 60, 30 : 30 - 40 and 60 : 15 - 30 respectively, the friction coefficient was relatively small. the degree of crystallinity of pure ptfe reached maximum by air cooling and the abrasion loss also reached maximum among three ones ; at the same time, the abrasion loss of solid lubricant sample was also the biggest among three ones ; when solid lubricant matched with 45 # steel axle or gcrl5 steel axle, lubricant transfer film could be formed on metal surface, thus direct contact between the surface of metal friction pair rings was reduced. their working life was elongated extremely ; there was mainly much graphite, a little ptff, moo3, feso4, cus and so on in lubricant transfer film
試驗結果表明:所選原料的尺寸、形狀及純度可滿足固體潤滑劑的性能要求;聚四氟乙烯樹脂熱分解溫度超過400 ,但在ptfe中加入無機填料會使復合材料吸水率提高,熔融溫度及分解溫度降低,且伴有氧化分解反應;碳纖維表面含有c = o及c - o - c等極性基團,有利於提高其與其它組分的相容性,提高層間剪切強度;均勻設計試驗方法能夠用較少的試驗次數找出配方與摩擦性能間的關系,擬合曲線基本能表示各配方的摩擦系數發展趨勢;配方中不加銅粉或不加石墨,其摩擦系數均較高,說明銅粉和石墨應該配合使用;當銅粉15份、石墨60份時,銅粉30份、石墨30 - 40份時,銅粉60 、石墨15 - 30份時,摩擦系數均具有較低值;純聚四氟乙烯樹脂在空氣冷卻時結晶度最大,磨損量也是三者中最大的;同時,固體潤滑劑試樣在空氣冷卻時的磨損量也是三者中最大的:不論是固體潤滑劑與45 #鋼軸配副或是固體潤滑劑鑲嵌入銅套后與gcr15鋼軸配副,在金屬表面均可形成潤滑轉移膜,從而減少金屬摩擦副表面間的直接接觸,大大延長其使用壽命;轉移膜中主要含有較多的石墨、少量聚四氟乙烯、 moo 。With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models
熱力學理論和方法已足以獲得準確的相平衡關系;然而即使對于簡單的二元物系的結晶過程,晶核形成和晶體生長動力學的研究仍面臨許多困難,通常採用經驗模型表述,而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵,因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。The structural characterization of v _ 2o _ 5 compounds were measured bymeans of differential thermoanalysis ( dta ) and thermogravimetry ( tg ), scanning electron microscopy ( sem ), and x - ray diffraction ( xrd ). the testsreveale that materials which were prepared by sol - gel ( inorganic sol gel andmelting - coling ) showed that the amorphous structure, and the interlayer spacingenlarge a lot than that of crystalline v _ 2o _ 5
採用熱重與差熱( tg - dta ) ,掃描電子顯微鏡( sem ) , x射線衍射( xrd )等測試手段對材料的結構性能進行表徵,結果顯示兩種溶膠-凝膠法(無機溶膠凝膠法和熔融淬冷法)制備的v _ 2o _ 5材料均為無定型結構,其層面間距均比晶體v _ 2o _ 5成倍增大。In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous
實驗結果顯示,用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜,與矽片襯底之間有良好的附著性;在中心條件時生長速率可控制在2600a / min左右;在基板溫度410時有最大的硬度可達16gpa ;其應力為壓縮應力,可達- 75mpa ;薄膜的臨界荷重為46 . 5un 。Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究,結果顯示,所制備的薄膜為六方纖鋅礦型結構,具有高c軸擇優取向性;表面均勻、緻密,薄膜材料由許多星狀晶粒組成,晶粒尺寸大約為10 - 30nm左右;薄膜可見光透過率平均可達90 % ;對薄膜厚度以及電學性能進行了測定后發現:單次鍍膜厚度約為75 - 240nm , al ~ ( 3 + )離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內;分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。The module of data processing includs not only measure method of general, but also adopts combine of hardware and software method, and through cursor choice and move to measure the parameter what we wanted. we adopts combine of hardware and software method to measure frequence. the module of data processing includs display principle of character, cursor display and boot - strap menu display, emphasizes in software compile method of interface menu
系統初始化模塊包括dsp的初始化,示波表參數初始化以及晶元存儲空間的分配;數據處理模塊不僅有常規的測量方法,而且採用了光標測量,可以通過光標的選擇和移動來測量所需要的參數,測頻還採用軟硬體相結合的方法,有硬體測頻法和軟體測頻法,以及對測量誤差產生的部分原因進行分析;在顯示處理模塊介紹了字元顯示原理,光標顯示以及開機畫面的顯示,著重介紹了界面菜單的軟體編寫方法。分享友人