晶體光學缺陷 的英文怎麼說

中文拼音 [jīngguāngxuéquēxiàn]
晶體光學缺陷 英文
optical defects of crystals
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • : Ⅰ動詞1 (學習) study; learn 2 (模仿) imitate; mimic Ⅱ名詞1 (學問) learning; knowledge 2 (學...
  • : Ⅰ動詞1 (缺乏; 短少) be short of; lack 2 (殘缺) be missing; be incomplete 3 (該到而未到) be ...
  • : Ⅰ名詞1 (陷阱) pitfall; trap2 (缺點) defect; deficiency Ⅱ動詞1 (掉進) get stuck or bogged do...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched

    採用解理實驗、 x射線衍射、電性能測試、紅外透過譜測試、可見吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法,並首次採用正電子湮沒壽命譜分析方法來研究czt單的空位,綜合表徵了所生長的的質量和性能。
  2. In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made

    本文的主要內容就是研究退火過程中cd _ ( 1 - x ) zn _ xte內富te相的形態、大小的變化及其對、電性能的影響,並通過計算,結合實際的退火實驗,制定相應的退火工藝,改善性能。
  3. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過吸收、、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後性能和形態變化,以及ni ~ +注入對不同摻雜單al _ 2o _ 3結構和性能的影響,得到以下結果: ( 1 ) ysz注量達到10 ~ ( 16 ) cm ~ ( - 2 )時,開始出現由f型和v型色心重疊而產生的吸收帶,與x射線、中子輻照相比,重離子輻照產生了更為復雜的復合而導致吸收峰紅移。
  4. Growth defects of optical crystals and their analysis techniques

    的生長及分析方法
  5. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的,並採用譜儀檢測分析等離子的可見譜以監測微波等離氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  6. Since 1987, many researchers have been engaged in the realization of photonic bandgaps, localized defect modes, and other optical properties peculiar to the photonic crystals. because photonic crystals are artificial crystals, it is our studing issue to design and fabricate the photonic crystals. many accurate numerical calculations could be performed thanks to the development of computing facilities. these calculations were really useful for the design of the photonic crystal structures

    自從1987年以來,許多研究人員試圖去實現中的子頻率帶隙和局域模以及其它一些特性。由於是人造,因此設計和製成,就成了研究的焦點。
  7. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導薄膜和薄膜,而這個領域的開發在很大程度上依賴于高取向和單金剛石薄膜以及大面積透明金剛石膜的獲得,但由於金剛石膜生長過程中的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取,從而導致金剛石膜的取向發生改變,使高取向和單金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  8. In 1987, a remarkable step was made by yablonovitch, who pointed out the possibility of the realization of photonic bandgaps, localized defect modes, and their applications to various optoelectronic devices, and by john who dicussed the strong localization of electromagnetic waves in disordered photonic crystals and also predicted many interesting quantum optical phenomena that can be realized in photonic crystals such as the bound state of photons and non - exponential decay of spontaneous emission

    1987年yablonovitch和john開創性地提出這一新概念, yablonovitch指出了有可能實現子頻率帶隙和局域模以及許多電技術方面的應用, john則討論了在無序中電磁波的強烈局域現象,並預言在中存在許多有趣的量子現象,諸如子局域態、自發輻射的非指數衰減。
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