晶體厚度 的英文怎麼說

中文拼音 [jīngtǐhòudù]
晶體厚度 英文
crystal thickness
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The thickness had some influence on the development of the banded spherulites : when the thickness reduced to some degree, pcl would develop chrysanthemum - like spherulites, which had no extinction rings or the maltese cross pattern under the crossed polarized optical microscopy. the results of the phase - contrast microscopy showed that growth speed of the chrysanthemum - like spherulites along the radius was not constant

    發現薄膜厚度對球晶的生長有一定的影響，當共混物膜薄到一定程度時， pcl不能形成環帶球晶，而是形成一種類似菊花狀的晶體，在偏光顯微鏡下看不到環帶，也沒有典型球晶所特有的maltese十字消光圖案。
  2. In this paper, the course of isothermal crystallization kinetics of polymer in limited volume unit is simulated by use of the method of monte carlo. four factors influenting on the course of polymer in the limited volume unite isothermal crystallization are analyzed under the given conditions. the four factors are sample volume shrinkage, the change of the linear growth rate of entities g, the change of sample thickness and the change of the number of nuclei

    本文採用montecarlo方法研究了高聚物在有限體積元中的等溫結晶動力學過程，分析了在一定條件下，樣品體積收縮、晶體線生長速率變化、樣品厚度變化和晶核數目變化這四種因素對高聚物在有限體積元中的等溫結晶過程的影響。
  3. Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness

    光學厚度對一維光子晶體禁帶寬度的調制
  4. The results show that the factors are the refractive index, thick ness, layer number of one - dimensional dual photonic crystal, polarization and incident angle of incident ray

    結果表明：組成一維二元光子晶體的折射率、厚度、層數、入射角、光源的偏振態等都對透射特性有影響。
  5. The result of transmission electron microscope ( tem ) showed that layers of layered silicates were exfoliated and dispersed in matrix homogeneously. according to statistical data, average thickness of layers was lonm, and the thickness of the biggest layers was less than 40nm, only a few layers were exfoliated in monolayer whose thickness was about inm

    透射電子顯微鏡（ tem ）照片顯示：層狀硅酸鹽片層發生剝離，片層均勻分散在nbr基體中，統計表明片層的平均厚度約為10nm ，最大的聚集體的片層厚度達到40nm ，推斷有一小部分片層剝離成單晶層的形式，厚度為1nm 。
  6. The tensile and compression experiment on bulk nanocrystalline ag prepared by igc method was carried on mt810 with different grain sizes and zwick 10tn2s machine at different strain rates under normal temperature respectively. the stain rate sensitivity m was found to be 0. 025, which was extremely lower than the ordinary values. also the work hardening exponent is very low

    本文從用惰性氣體蒸發冷凝和真空原位壓結法（ igc ）制備得到的直徑80mm ，厚度7 . 6mm的大尺寸納米晶金屬ag樣品上切割得到符合力學實驗要求的拉伸和壓縮試樣，在mts810和zwick精密力學測試機上分別精確測定了拉伸和壓縮應力?應變曲線與晶粒尺寸和應變速率的關系。
  7. So far as the grain size order of magnitude is concerned, the thickness of the acicular ferrite is about 200nm, while the thickness of the austenite existing inside the ferrite is only several nm to 10 nm

    從晶粒尺寸數量級來說，針狀鐵素體的厚度約為200納米，而鐵索體內奧氏體的厚度僅為幾到10納米數量級。
  8. Moreover, we should find ways to calibrate the thickness and orientations of the birefringent crystals precisely

    另外，必須找到精確測量晶體厚度和角度取向的方法。
  9. In realizing this, two important factors must be determined : the thickness of the crystals and the orientations of the crystals

    要達到這一目的，需要確定兩個因素：一、晶體厚度；二、晶體方向。
  10. Hot shock and cathode electrolysis experimental results indicate the interface adhesion strength between coating and aluminum matrix is excellent. the element electronic probe image provide that the two composition are co - deposition ; structure analysis by xrd ( x - ray diffraction ) demonstrated that cr exists in the way of solid solution in the coating

    Sem和金相觀測結果表明浸鎳后鍍層結晶緻密、厚度均一；熱震及陰極電解結果說明鍍層與基體結合牢固緊密；鍍層元素電子探針掃描圖說明鎳鉻兩種元素均勻沉積； xrd分析證明鍍層中鎳鉻以固溶體的形式存在。
  11. Ammonia played a critical role in the vertical alignment of cnts, and the possible reason was that in 850 the atomic hydrogen decomposed from ammonia reacted with amorphous carbon to form volatile products to keep the metal surface clean, and mechanical leaning against neighboring tu bes established a morphology of vertical alignment

    當基體為單晶硅、催化劑鎳膜厚度為20nm 、氨氣氣氛、生長溫度為850時，得到了定向生長的納米碳管。其原因可能是850時氨氣分解的氫原子和無定形炭生成了易揮發物質，從而保持催化劑的活性使納米碳管依靠相鄰碳管之間的斥力定向生長。
  12. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  13. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  14. For films thinner than 1 m, the preferred orientation was ( 101 ) and ( 104 ) plane while the sputtering gas was ar only, and the preferred orientation was ( 003 ) plane while the sputtering gas was ar and o2 mixing. this is because of the excessive o in the licoo _ 2 film produced by the ar / o2 r. f

    當薄膜厚度在1 m左右時，以ar 、 o _ 2混合氣氛為濺射氣氛，薄膜中晶體生長的優選晶向為（ 003 ）晶面群方向;以ar氣為濺射氣氛，薄膜中晶體生長的優選晶向為（ 104 ） 、 （ 101 ）晶面群方向。
  15. The experiments showed us : firstly, mediums with different magnetic and dielectric properties had different influence on the microwave - absorbing properties of spinel ferrite ; secondly, magnetic texture treatment greatly affected the microwave - absorbing properties of the spinel ferrite - based mixed material which contained single - domain particles of hexagonal ferrite, changing the matching thickness, the density of area and the position of absorption peaks and increasing the absorption quantity and the 10db bandwidth ; thirdly, the coupling effect between different layers affected the microwave - absorbing properties of the double - layer spinel ferrite - based mixed material, decreasing its matching thickness and density of area and increasing the position of absorption peaks

    實驗發現： （ 1 ）不同磁性與電性的介質對尖晶石型鐵氧體吸波特性的影響不同； （ 2 ）磁織構化處理對含有六角晶系鐵氧體單疇顆粒的尖晶石型鐵氧體基混合吸波材料的性能影響很大，可以改變匹配厚度、面密度與吸收峰峰位，提高吸收量與10db帶寬； （ 3 ）對于雙層材料，層間耦合作用會影響其吸波性能，降低匹配厚度與面密度，提高吸收峰峰位。
  16. A layer ' s geometric thickness of this kind of photonic crystal is fixed, but another layer ' s thickness is graded

    該光子晶體保持其中一折射率層的幾何厚度不變，而另一折射率層的幾何厚度緩慢變化。
  17. The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands

    氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。
  18. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  19. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  20. The results show that the thermal diffusivity of thin film is smaller than its corresponding bulk material, and with the decreasing of the thickness, the thermal diffusivity also decreasing

    ）的二氧化硅薄膜、氮化硅薄膜、多晶硅薄膜的熱擴散率，實驗結果表明，薄膜的熱擴散率比其體材料的要小，並且隨著薄膜厚度的減小，熱擴散率也減小。
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