晶體單元 的英文怎麼說

中文拼音 [jīngtǐdānyuán]
晶體單元 英文
crystal unit
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the entitative routing stage, the macro - cell layout must be compressed for optimization area and time delay. it should be compared beauty with the routing result by manual. an algorithm, which is gridless, variable widths and minimizing layer permutation, is advanced for channel region

    晶體管級實體布線階段，由於庫單元的復用性，要求庫單元版圖緊湊，即要求單元版圖在滿足各約束條件的前提下面積、性能優化程度較高，能與手工設計的版圖相媲美。
  2. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed

    在改變e _ （ ag ）腐蝕液的配方的基礎上，研製了新的腐蝕液，可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同（ 110 ）面之間的關系，方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的（ 110 ）面，經過表面處理，試制了探測器元件，對24lam有較強的響應。
  3. Then the structure unit of hexangular lattice is found according to the principle of invariable symmetry. renormalization transformation is processed when we regard the structure unit and the growth model as graphs before and after transformation respectively. after choosing the 11 thermodynamic function fugacity as parameter, we can write out the partition functions before and after transformation and the formula of renormalization transformation

    然後根據對稱性不變的原則，從整體晶格中選取結構單元，把結構單元和生長模型分別作為重整化變換前、后的圖形來進行重整化變換，選取熱力學函數易逸度為參量，寫出了重整化變換前後的配分函數和重整化變換關系式，求出了這一變換的不動點。
  4. Consisting of the protracting graph of hydrogen - like atom ' s angle distributing, computer simulation of the symmetry of molecular orbital and chemical reaction mechanism, showing the molecular point group and symmetry element, computer simulation of molecular vibration, bravias ' s crystal lattice and their transforming, extracting of plane periodic lattice, extracting of solid periodic lattice, close packing of isometrical pellet and the structure of simple mental substance, close packing of unequal pellet and crystal structure of representative ionic crystal, computer simulation of phase analysis by x - ray diffraction

    內容包括類氫原子角度分布圖的繪制，分子軌道對稱性和反應機理的微機模擬，分子點群和對稱元素顯示，分子振動運動的微機模擬，布拉維晶格和晶格轉化，平面點陣抽取，立體點陣抽取，等徑網球的密堆積和金屬單質結構，不等徑圓球密堆積和典型離子晶體結構， x射線多晶衍射的微機模擬十個子模塊。
  5. Measurement of quartz crystal unit parameters - phase offset method for measurement of motional capacitance of quartz crystal units

    石英晶體元件參數的測定.第2部分:用相位偏離法測量石英晶體單元的動態電容
  6. An element of the material at such a point behaves like a crystal of the orthorhombic system.

    材料中此點附近的一個單元體，其表現猶如正交晶系的晶體。
  7. It has been found that all the elements in the addition act respectively in the way that affect the material ' s properties during the calcining process and the increase of the pms / pzn ratio can weaken the stability of the crystal structure of the sintered ceramics and cause the crystal structure transformation from the tetragonal to the rhombohedral as well

    發現多元壓電陶瓷材料中，無論是主加組元還是微量摻雜，預燒階段，它們在陶瓷中的作用都表現為單獨離子對陶瓷結構和性能所起的作用。燒結后，隨著pms pzn相對量的提高，陶瓷晶體結構由四方相向三方相轉化，同時穩定性下降。
  8. The very first power1 was actually several chips on a single motherboard ; this was soon refined down to one rsc risc single chip with more than a million transistors

    最初的power1晶元實際上是在一個主板上的幾個晶元；后來很快就變成一個rsc （ risc單一晶元） ，其中集成了100多萬個晶體管。
  9. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature

    碲鋅鎘（ cd _ （ 1 - x ） zn _ xte ，簡寫czt ）單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
  10. A transistor memory cell can be made with any number of terminals.

    晶體管存貯單元端點的數量是不受限制的。
  11. The chip of microbridge structure thermocouple type microwave power sensor is designed by using seeback domino offect of thermocouple. ta2n of relatively low resistor - temperature coefficient and si of relatively high thermoelectric power seebeck coefficient are used as thermocouple materials in the chip

    微梁結構熱偶微波功率傳感器晶元就是利用熱偶的塞貝克效應設計的，晶元選擇具有低電阻溫度系數的ta2n和具有高熱電系數的半導體單晶si作為熱偶材料。
  12. Wirings of the poly layer are always utilized under the silicon grid technics. to control the macro - cell signal delay and improve signal integrality, the crossing among different nets must be averagely distributed to reduce the number of layer permutation. the metal layer wirings should be maximized and the length of poly layer wiring in each net should be minimized

    硅柵工藝晶體管級布線利用多晶層走線，為了控制宏單元時延性能及改善信號完整性形態，關鍵是不同線網間交叉的均衡分配以減少走線的換層次數，最大化金屬層走線以及每一線網多晶層走線長度的有效控制。
  13. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  14. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  15. To realize nolinear excitation controller, it must be improved that the disposal speed of nolinear excitation control " s signal. with analyzing and comparing all kinds of microcomputer excitation controller, a new microcomputer excitation control scheme is offered that is based on dsp controller while the cpld chip is utilized for realizing the function of pulse trigger. it is described in detail that the method of realizing controllable silicon digital logic by verilog hardware describe language and the designed digital pulse trigger " s veracity was validated by digital simulation

    論文進一步針對非線性勵磁控制要求信號處理速度高、信息量大的特點，在對目前微機勵磁控制器分析基礎上，提出採用dsp控制器晶元作為核心處理器的微機勵磁控制器的解決方案，運用復雜可編程邏輯器件cpld晶元實現可控硅同步脈沖觸發單元，並簡要說明了verilog硬體描述語言和數字脈沖形成邏輯的方法，通過電路數字模擬對所設計的數字觸發單元進行了驗證。
  16. The shao lee soo professor of mechanical engineering at the university of illinois, urbana - champaign uiuc, usa, and his colleagues have produced a stretchable form of silicon that consists of sub - micrometer single crystal elements

    美國伊利諾依大學urbana - champaign分校uiuc機械工程學系教授黃永剛prof . yonggang huang和他研究夥伴製造出一種能夠拉伸的硅，它包含一個亞微米單晶體元件。
  17. In this paper, we introduced the research and develop work concentrating on the realization of hardware and software of a novel pattern generator using dsp chip

    本論文主要介紹了課題所完成的基於dsp晶元的新型圖形發生器的硬體研製、圖形發生器畫圓演算法以及其他單元圖形生成演算法的研究與實現工作。
  18. 30 mhz measurement of quartz crystal unit parameters by zero phase technique in a pi - network - part 4 : method for the measurement of the load resonance frequency fl, load resonance resistance rl and the calculation of other derived values of quartz crystal units, up to 30 mhz

    用型網路的零相位法測量石英晶體元件參數.第4部分:石英晶體單元負荷諧振頻率fl負荷諧振電阻rl的測量方法及其他石英晶體元件導出值的計算方法
  19. Measurement of quartz crystal unit parameters by zero phase technique in a - network ; part 3 : basic method for the measurement of two - terminal parameters of quartz crystal units up to 200 mhz by phase technique in a w - network with compensation of the parallel capacitance c

    在型網路中用零相位技術測量石英晶體單元參數.第3部分:在具有並聯電容c補償的w型網路中用相位技術測量頻率200mhz及以下石英晶體單元的二端參數的基本方法
  20. Methods for the measurement of frequency and equivalent resistance of unwanted resonances of filter crystal units

    濾波器晶體單元的無用諧振頻率和等效電阻的測量方法
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