晶體場模型 的英文怎麼說

中文拼音 [jīngtǐchǎngmóxíng]
晶體場模型 英文
crystal field model
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 模型 : 1 （仿製實物） model; pattern 2 （制砂型的工具） mould; pattern3 （模子） model set; mould patter...
  1. With its new frame. modern technology, complex information dispose and unique control mode, it embodys an idea which is information centralized and control decentralized. its main advantage is system open and interchange and its frame is so simple that it can decrease producative. cost and maintenance load. as it is a new technology, there are different kind databus standards which adapt to different control area. this papaer firstly introduces field bus ' sframe work, function, type, compares distributed control system and field control system. then it focuses on introducing can protocol and can control chip sja1000 and can interface chip 82c250, at last, it introduces how to set up a typical automatic control model based on can. this model can be used in practical industrial control area and management area by appropriate change

    由於現場總線是一門新技術，有各種不同的總線標準和總線形式，它們適用於不同的領域，本論文首先分析現場總線的體系結構、功能、類型，比較集散控制系統與現場總線控制系統的區別，然後集中論述了其中的一種現場總線? ? can總線（ controllerareanetwork ） 。介紹了它的協議規范，並且介紹了現在比較流行的can控制器晶元sja1000和can介面晶元82c250 ，並在此基礎上，組建了一個典型的基於can總線的自動化模塊控制模型，把這個模型進行適當的改動就可以用於實際的工業控制領域和管理領域中。
  2. Finite element method ( fem ) was used to simulate thermal and vibration problems in stacked - die csp assembly. finite element models and apdl programes were built in ansys to conduct thermal, thermal - mechanical and vibration analysis. the aim of these researches were trying to find some possible reasons and trends which affect the reliability of stacked csp / bga assembly and give some useful suggestions for the packaging design

    本論文正是針對以上情況，以採用引線鍵合工藝的三維疊層csp / bga封裝（裸晶元疊裝）為研究對象，在有限元分析軟體ansys中建立相關的有限元模型，編制了相應的apdl參數化分析程序，進行了溫度場分析、熱循環加載下的snpb合金焊點疲勞分析和實裝pcb板的振動模態分析。
  3. This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted, which is for short channel mos field effect transistor specially. these works are presented in this paper. 1

    本論文選取目前業界佔主流地位的bsim3 （ berkeleyshort - channeligfetmodel ）為將要提取的模型，它是專門為短溝道mos場效應晶體管而開發的一種模型。
  4. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  5. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  6. And some relevant property parameters of waveguides are measured. based on the band transport model, the buildup of space charge field and the light - induced refractive index changes in photorefractive crystals are discussed

    首先根據帶輸運模型的動力學方程組，討論了光折變晶體中光致空間電荷場的建立以及由此而產生的折射率變化。
  7. In the second chapter, the operating principle of solid - state laser is analyzed. based on the model of four - level system, the interacting theory between laser field and laser crystal is studied by the rate equation theory, then the characters, such as threshold power, output power, slope efficiency etc., of solid - state laser are deduced

    第二章分析了固體激光器的工作原理，以四能級系統為模型，應用速率方程理論研究了激光場與激光晶體之間相互作用理論，導出了固體激光器的閾值功率、輸出功率和斜效率等特性。
  8. Secondly, the article begins with changing the original chip and selects a new type of chip, max1479, which has more emission power, constitutes a new communication protocol, and designs the circuit and program. in the end, this article analyses the influence of environment on the antenna. meanwhile, it also analyses characteristic of the antenna by using electromagnetic theory, and then designs a kind of inverted - f antenna

    其次，本文從射頻晶元改型入手，選用一款專用於汽車電子並具有更高發射功率的射頻晶元max1479 ，重新制定通信方案，設計硬體電路並編程調試;最後，本文分析了環境因素對天線輻射的影響，應用天線和電磁場理論對天線的特性進行分析，設計一種倒f型天線和螺旋天線相結合的天線結構，並用hfss軟體和cst軟體模擬。
  9. According to the model of low voltage electrophoresis chip, the injection, separation, detection and control of electrophoresis chip have been discussed in detail. the schematic of low voltage electrophoresis chip is presented and the computer program is developed to simulate the separation process to optimize the micro system

    根據電泳晶元低電壓運動梯度場模型，對晶元的進樣、分離和檢測及控制進行了詳細的分析討論，在分項討論的基礎上，確定了低電壓電泳晶元的總體結構，進行了相應的計算機模擬。
  10. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
分享友人
分享到 Line

分享到臉書