晶體場能 的英文怎麼說
中文拼音 [jīngtǐchǎngnéng]
晶體場能
英文
crystalfield energy-
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors
現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied
由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field
文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質Cfse crystal field stabilization energies
晶體場穩定能Crystal field stabilization energy
晶體場穩定能The judgment of the element to be zero in calculating the energy - hamiltonian - matrix in the crystal - field theory
晶體場理論計算能量哈密頓矩陣中為零矩陣元的判別A patch antenna with air holes in the substrate has been designed. the finite - difference time - domain ( fdtd ) method together with the perfectly matched layer ( pml ) boundary treatment has been used to study the performance of the antenna. it is shown that the surface waves are significiently suppressed, the frequency bandwidth is improved, the sidelobe levels are reduced and consequently the gain in the forward direction is improved by 14 db ( about 4 db higher than the value reported previously )
設計了一種基底鉆周期圓孔結構的電磁（光子）晶體貼片天線，用fdtd方法並結合pml吸收邊界條件對該天線進行了研究，結果表明本文所設計的基底鉆孔型電磁晶體貼片天線取得了多方面的性能改善，與普通天線相比，基底中的表面波受到很大抑制，天線的帶寬增加，遠場方向圖上天線的旁瓣和背瓣被明顯削弱，向前輻射的增益由原來的12db增加到26db ，增加了14db ，比文獻上報道的gonzalo等人的研究結果提高了4db 。You might think that these carriers would get swept away as soon as any small electric field was put across the crystal.
你們可能認為只要在晶體兩端加小電場就會使這些載流子一掃而光。The microwave magnetic sintering can not only lower the sintering temperature and shorten the sintering time, but also decrease the micro - grain size of magnets and make intergranular phase and grain boundary of main phase distributed well. the abnormal grain growth was found in conventional sintered ndfeb magnets, which may be due to the greater particle size and uneven distribution of powder, and higher sintering temperature and longer sintering time. of course, the abnormal grain growth would deteriorate the magnetic properties
微波磁場燒結的不但降低燒結溫度，縮短燒結時間，而且使磁體整體加熱，受熱更均勻，因而磁體晶粒更細小，並且主相晶粒邊界趨于規則化，晶間相的分佈更均勻；在常規燒結的磁體中則出現了晶粒異常長大現象，造成這一現象的原因，一方面可能是燒結溫度過高或燒結時間過長，另一方面可能是磨製的粉體均勻性較差，存在的大顆粒被許多細小顆粒包圍，在燒結過程中，大顆粒不斷吞併小顆粒，逐漸長大，而異常長大的晶粒自然會導致磁體性能的惡化。Much of the credit belongs to advances in graphics processing units ( gpus ), the microchips at the heart of computer video cards that transform 3 - d scenes into 2 - d frames at speeds faster than a trigger twitch
這大都得歸功于繪圖處理器（ gpu ）的進步，也就是位於電腦顯示卡核心的微晶片，它能夠快速把立體場景轉換成平面影格，速度甚至比扣扳機還快。Through the calculation of the electromagnetic green ' s function, we investigate the spontaneous emission behavior from atoms in one - dimensional photonic crystal. we found that the pc effect may lead to the coexistence of both accelerated and inhibited decay processes
通過計算一維光子晶體中電磁場的green函數，我們考察了一維光子晶體中原子自發發射的壽命分佈，發現光子晶體效應能使原子自發發射速率加快或減慢。Only appropriate field is applied, can planar waveguide be fabricated in sbn crystal
只有沿sbn晶體的c軸方向施加適當的外電場，才能寫入平面光波導。Mesfet digital logic families : performance criteria for logic. logic families : normally - on logic ( fl, bfl, sdfl ) ; normally - off logic ( dcfl ) ; comparison offamilies ; examples of fabrication sequences ; performance data ; state - of - the - art commercially
10金屬-半導體接面場效電晶體數位邏輯家族：邏輯效能標準。邏輯家族：常開邏輯（ fl ， bfl ， sdfl ） ，常關邏輯（ dcfl ） ，家族比較，製程步驟?例，效能數據，已商業化之科技產品。In order to get strain from the channel, by process, deposit si3n4 at nmos and adopt the silicon - germanium epitaxy on source / drain by pmos, can effective improve nmos and pmos electronic characteristic
中文摘要近年來，為了提升金氧半場效電晶體工作頻率及性能，尺寸不斷微縮，讓相同面積晶片可以擁有更多的電晶體數量。Due to the advantage of non - destruction read out, ferroelectric field effect transistor ( ffet ) is supposed to be the ideal potential memory device and has been widely investigated
鐵電場效應晶體管（ ffet ）存儲器能夠實現非破壞性讀出，是一種比較理想的存儲方式，因此從一開始就受到人們極大的關注。By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field
本文充分利用半導體的能帶理論，從薄膜晶體結構、能帶結構和晶體勢場的角度，分析載流子的遷移、散射以及載流子的產生和晶體結構缺陷對載流子的捕獲。Based on the photoelectron and microelectronics, communication and net technology has become the core of high - tech. as the main carriers of information technology, lasers and display devices play significant roles. compare to the inorganic semiconductors, the organic semiconductors have much advantages
以多種工藝在硅基襯底和玻璃襯底上制備了不同結構的有機薄膜場效應晶體管（ otft ） ，論述了不同制備工藝的優缺點，以及器件結構對性能的影響。It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography
在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造，高分辨、大面積光柵和網格製造，在抗蝕劑性能測試、面形測量和計量等領域，干涉光刻技術都具有廣闊的應用前景。Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。This paper shows the investigation on the magnetic properties of the single crystal ergag under high magnetic field by quantum theory, and gains the magnetic anisotropy. it is in good agreement with the result of the experiment. using quantum theory, taking the special microscopic structure of ergag into account, we calculate and analyse the splitting of the lowest level ( 4i15 / 2 ) according to the crystal field
本文作者經過詳細推導和計算第一次用量子理論定量計算了磁場作用下單晶ergag石榴石的磁特性，得出了在外磁場下ergag石榴石在溫度4 . 2k時產生的與實驗基本吻合的磁性各向異性現象，利用量子理論，鑒于ergag的特定的微觀結構，計算基態（ 4 ~ i _ （ 15 / 2 ） ）能級在晶場作用下的劈裂，得出由於ergag的順磁性，故其晶場作用下晶體的總磁矩應該為零。分享友人