晶體管源極 的英文怎麼說

中文拼音 [jīngtǐguǎnyuánjí]
晶體管源極 英文
transistor source
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  2. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  3. Like inorganic semiconductor transittors, which displaced vacuum tubes for computation, solid - state lighting of led is a disruptive technology that has the potential to displace vacuum or gas tubes ( like those used in traditional incandescent or fluorescent lamps ) for lighting

    固態光源取代傳統真空光源如同晶體管取代傳統真空電子管一樣是破壞性技術創新，將引起照明領域的一場革命。本文的主要工作是研究白光發光二極體及相關的工藝技術。
  4. Current sources are most useful in modeling the behavior of transistors.

    電流源在模擬晶體管特性時極其有用。
  5. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the sio

    研究了場效應納電子晶體管構造過程中金屬電極的結構設計，源-漏電極高度sio
  6. Remember the following words and expressions : e. g. multimeter ； circuit ， current ； voltage ； resistance ； digital multimeter ； analogue multimeter ； analogue multimeter scales ； zero adjustment control ； zero adjustment control for resistance ranges ； measurement ranges switch ； transistor test socket ； meter probe ； positive terminal ； negative terminal ； anode ； cathode ； red lead ； black lead ； power supply ； connect in parallel ； connect in series

    記住萬用表、電路、電流、電壓、電阻、數字萬用表、模擬萬用表、表頭、機械零位調整器、歐姆零位調整器、量程選擇開關、晶體管插孔、表棒、正接線端、負接線端、陽極、陰極、紅導線、黑導線、電源、並聯、串聯等常用英文單詞，並逐步掌握。
  7. A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter. it takes 80c196mc single - chip as core processor

    電源變換器的功率開關器件採用現代電力電子功率器件igbt （ insulategatebipolartransistor ，絕緣柵雙極型晶體管） ，控制系統以80c196mc單片機作為控制核心。
  8. We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the ratio

    我們已經看到有源晶體管的恆定的基極電流是如何以系數控制集電極電流的。
  9. In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )

    本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。
  10. Hvdc light is a kind of new dc transmission technology developed from the traditional hvdc, with voltage source converter ( vsc ) and igbt as main components. the basic principles of vsvpwm are studied, and an approach to simulate vsvpwm based on pscad / emtdc is put forward in this thesis

    輕型高壓直流輸電（ hvdclight ）技術是在傳統直流輸電基礎上發展起來的一種新型輸電技術，其主要部件是以絕緣柵雙極晶體管構成的電壓源換流器（ vsc ） 。
  11. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  12. This paper has designed a inverter power supply of volume 2kva, working frequency 20khz., based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ). it was provided the working theory of dc voltage circuit and bridge type invert circuit

    本文在分析了igbt （絕緣柵雙極晶體管）特性的基礎上，設計了一臺容量為2kva 、頻率為20khz的高頻逆變電源。
  13. The most effective converter that fits for such kind of application is a well - known full - bridge three - phase vsi ( voltage source inverter ) converter with igbt ( insolated gate bipolar transistor ) modules, which can be used in wind power generation system or other general purpose utilizations such as asd ( adjustable speed drive ), active rectifiers, ac power supplies, and so forth

    最適合的變換器就是igbt （集成門極雙極性晶體管）三相全橋電壓源變換器，這種拓撲結構的變換器可以應用到風力發電系統或者其他通用的場合，比如asd （變速驅動）系統、有源整流、交流電源等等。
  14. Our company develops various devices such as diodes used for switching power supply, transistors, semiconductors, silicon surge protectors, solenoids, and photosensitive drums used for digital plain - paper copiers, printers and other equipment

    開發從用於開關電源的二極體到晶體管電阻元件等半導體以及用於螺線管數字ppc印表機上的感光體等。
  15. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
  16. Secondly, the multiplier circuit configuration is established with the designing thought of multiplier. thirdly, simulation and optimization of the detail practice multiplier circuits are operationed by using of hamonic balance analysis ( hb ) method in software ads. fourthly, passive quintupler using schottky diode and active doubler, tripler, quadrupler and quintupler using phemt are researched and developed, respectively

    本文的主要工作是先介紹分析倍頻器的基本原理，根據倍頻器的設計理念，建立電路拓撲結構，採用ads軟體並利用諧波平衡分析法對具體倍頻電路進行模擬優化，分別研製了無源肖特基二極體五次倍頻器以及有源phemt晶體管2 、 3 、 4 、 5次的各次倍頻器。
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