晶體結構因子 的英文怎麼說

中文拼音 [jīngtǐjiēgòuyīnzi]
晶體結構因子 英文
crystal structure factor
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 因 : Ⅰ動詞[書面語] （沿襲） follow; carry on Ⅱ介詞1 [書面語] （憑借; 根據） on the basis of; in accord...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. Abstract : starting from the crystal structural characteristics and through the theoretical calculation of the chemical bonds of diasporite and kaolinite structures and the study of the flotability of the flotation systems of anionic collector ( sodium oleate ) and cationic collector ( dodecylamine ), the relationship between the crystal structural characteristics and the flotability of diasporite and kaolinite and the main causes for the difference in their flotability are analysed by the crystal chemical theory of minerals

    文摘:從一水硬鋁石和高嶺石的晶體結構特徵出發，通過對一水硬鋁石和高嶺石結構中化學鍵的理論計算及陰離子捕收劑（油酸鈉） 、陽離子捕收劑（十二胺）浮選體系中可浮性的研究，採用礦物晶體化學理論分析了礦物晶體結構特徵與可浮性之間的關系，以及產生一水硬鋁石和高嶺石可浮性差異的主要原因。
  2. Fe3o4 nano - particles, which can be dispersed in nano scale, were prepared by means of chemical co - precipitation method. such influencing factors as the type of precipitant, the feeding mode, the surfactants, the reaction temperature, the curing temperature were surveyed. some properties such as crystal structure, particle size, magnetic properties and iron content were characterized

    深入探討了沉澱劑的種類、加入方式、表面活性劑、反應溫度、熟化溫度等各種因素對產物的粒徑及磁性能的影響，對fe _ 3o _ 4納米粒子進行了晶體結構、粒徑、磁性能、鐵含量等性能的表徵。
  3. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  4. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  5. The experiment proved the adjustments is effective. according to the fact that the structure of the film causes the wavelength shift, we prepared the shift - free polarizers at 1054nrn with plasma - iad

    根據膜層的柱狀多晶結構是引起工作波長漂移的主要因素，利用等離子體輔助沉積制備出了中心波長為1054nm的無漂移偏振膜。
  6. In order to improve the properties of materials, one needs to understand the structural relationship between interface and matrix of the materials, such as interface atomic structure, misfit dislocation, chemical bond structure, stress field distribution, composition segregation etc. there are tremendous research works on the grain boundary and interface structures during last century and the sophisticated theory about grain boundary and interface, i. e. coincidence site lattice and 0 - lattice theories had been developed simultaneously

    眾所周知，材料的宏觀性質是由其微觀結構所決定的，因此，為了改善材料的宏觀性能我們有必要弄清楚材料的界面與基體之間的結構關系，如界面的原子結構、失配位錯、化學鍵合、應力場的分佈等等。在上世紀，人們已對晶界和相界面結構進行了大量的研究，同時，相關的理論如「重位點陣」和「 o -點陣」理論也發展成熟。
  7. There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect

    光子晶體中的光子與一般晶體（電子晶體）中的電子相似，都有能帶結構，都會因為有雜質和缺陷態的存在而存在局域態。
  8. By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal, the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained

    通過分析dkdp晶體的原子結構以及柱面和錐面的原子結構差別，解釋了晶體柱面和錐面雜質金屬離子含量差別的原因以及其與紫外可見透過光譜的關系。
  9. Secondly, the article begins with changing the original chip and selects a new type of chip, max1479, which has more emission power, constitutes a new communication protocol, and designs the circuit and program. in the end, this article analyses the influence of environment on the antenna. meanwhile, it also analyses characteristic of the antenna by using electromagnetic theory, and then designs a kind of inverted - f antenna

    其次，本文從射頻晶元改型入手，選用一款專用於汽車電子並具有更高發射功率的射頻晶元max1479 ，重新制定通信方案，設計硬體電路並編程調試;最後，本文分析了環境因素對天線輻射的影響，應用天線和電磁場理論對天線的特性進行分析，設計一種倒f型天線和螺旋天線相結合的天線結構，並用hfss軟體和cst軟體模擬。
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