晶體長大速度 的英文怎麼說

中文拼音 [jīngtǐzhǎngdàsùdù]
晶體長大速度 英文
crystalline growth velocity
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 長大 : grow; grow up; be brought up
  • 速度 : 1. [物理學] velocity; speed; blast; bat 2. [音樂] tempo3. （快慢的程度） speed; rate; pace; tempo
  1. The crystallization and melting behavior of mellocene - catalized branched and linear polyethylenes of low molecular weight was studied. it was found that the crystalline lattice of branched polyethylene is larger than that of linear polyethylene because of the existence of branched chains. the melting behavior of branched polyethylene is similar to that of linear polyethylene since the branched chains can not enter the lattice. however, the crystalline behavior of low molecular weight branched polyethylene is the same as that of high molecular weight linear polyethylene, but different with that of low molecular weigh linear polyethylene. kinetics theory analysis evidenced that the transition temperature of growth regime of the branched polyethylene is about 20 lower than that of linear polyethylene with the same molecular weight. it may be attributed to the existence of short branched chains

    研究了金屬茂催化的低分子量支化聚乙烯和線性聚乙烯的結晶及熔融行為，發現支化聚乙烯的結構與線性聚乙烯相同為正交結構，但晶格略有膨脹.支鏈的存在對熔融行為影響不大，兩種聚乙烯的熔點均隨結晶溫度的升高而非線性增加，表現出低分子量樣品的共同特徵.但支鏈的存在對結晶行為卻有很大的影響，主要是由於支鏈的存在降低了晶體的結晶速率從而影響結晶過程，使得低分子量的支化聚乙烯的結晶行為與高分子量線性聚乙烯的結晶行為相似而與低分子量的線性聚乙烯不同.動力學分析表明，低分子量的支化聚乙烯的結晶生長方式的轉變溫度比同等分子量的線性聚乙烯降低了約20
  2. And considerable work has been done hi the growth behaviour in the tetrachloride solution concluding studies of crystal growth and growth kinetics. a crystal of dimensions 20mm x 20mm x 1mm was produced hi the tetrachloride solution by lowing temperature. and bcf spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data

    本文以苯為溶劑溶液降溫法培養出了60mm 40mm 3mm大尺寸hhm單晶；另外探討了hhm在四氯化碳溶液中的生長行為，溶液降溫法培養出了20mm 20mm 1mm的較大尺寸單晶，並用動態循環體視顯微鏡觀察法測定了其在不同的過飽和下主要顯露晶面的法向生長速率，在較大過飽和度范圍內考察了其bcf表面擴散螺位錯生長機制。
  3. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  4. The formation process of w - type ferrite underwent from oxide of metal, the m - type transition phase to final w - phase. when the heating rate was 5 / min, at 900 for 3 hrs and 1200 for 4 hrs, pure m - type and w - type ferrites were formed in air respectively. with heat treatment temperature increasing, crystal structure was more intact, the saturation magnetization increased and the coercive force decreased

    熱處理過程表明， m型鐵氧體直接由金屬氧化物反應形成，未經歷尖晶石中間相； w型鐵氧體形成由金屬氧化物到m相過渡相最終向w相的轉變；當升溫速率為5 min ，溫度在900 ，保溫3小時和1200保溫4小時，就分別形成單相m相和w相鐵氧體；隨著熱處理溫度的升高和保溫時間的延長，衍射峰變尖銳，結晶更完整，空心微球的飽和磁化強度增大，矯頑力減小。
  5. While many parts of this technology have made good progress ( such as increasing data storage density, reducing access time, improving performances of photorefractive memories, and the like ), the volatility of the stored data in photorefractive materials has become serious obstacle to the practical realization of photorefractive holographic memories

    近年來，在提高數據存儲密度、存取速度以及存儲器性能等方面，已經取得了重大的研究進展。光折變晶體中的非易失性存儲（長期保存和無損讀出）問題，已成為高密度全息存儲技術能否實用化的關鍵問題之一。
  6. The suitable temperature field, growth rate of the crystals and rotation rate were decided by a mount of experiment and theory analysis

    通過大量實驗並結合理論分析，設計了合適的溫場，適宜的提拉速度和旋轉速度等晶體生長的工藝參數。
  7. In this thesis, we used the q - switched nd : yag laser pulse focused by lens to pump the cr ~ ( 4 + ) : mg _ 2sio _ 4 crystal, with the pump laser pulse duration and energy of 30ns and 50 mj separately, and got the laser pulse with center wavelength, pulse duration and energy of 1. 22 m, 8. 2 ns and 10 mj on the best work condition. on the base of zhangguowei s approximation about gain - switching and the parameter of cr ~ ( 4 + ) : mg _ 2sio _ 4 crystal, we calculated the time characteristics of cr ~ ( 4 + ) : mg _ 2sio _ 4 laser pulse with rate equation by numerical method, obtained the conclusion that the laser pulse duration is only related to the pump energy and cavity length : the larger the pump energy is, the narrower the pulse duration is ; the longer the cavity is, the wider the

    本論文採用調qnd : yag脈沖激光通過透鏡聚焦后縱向抽運cr ~ （ 4 + ） : mg _ 2sio _ 4晶體，抽運光脈沖寬度為30ns 、能量為50mj ，在較佳工作條件下得到了中心波長為1 . 22 m 、脈寬為8 . 2ns 、能量為10mj的激光脈沖;並在張國威分析增益開關時間特性的近似法基礎上，結合實際的cr ~ （ 4 + ） : mg _ 2sio _ 4激光器的相關參數，從速率方程出發，用數值計算的方法更為精確的模擬了cr ~ （ 4 + ） : mg _ 2sio _ 4激光器輸出激光脈沖的時間特性，得出了激光脈寬只與抽運能量、腔長有關的結論，即抽運能量愈大，脈寬越窄;腔長越長，脈寬則愈寬。
  8. It was found that doping rb + 、 cs + changed the morphology of ktp greatly. the speed of growth along a direction was so extremely slow that the length increased along a direction was n ' t obvious and the morphology looked like a slice. while doping ga3 + led the speed of growth along a direction to become faster, hence, the length along a direction become thicker

    發現分別摻rb + 、 cs +離子的ktp晶體生長習性發生很大改變，晶體a向生長速度極其緩慢， a向尺寸增加不大，晶體外形成片狀，而摻ga3 +離子的ktp晶體a向生長速度增大， a向尺寸變厚。
  9. With the same sintered conditions, the relative density of sintered body was 98. 7 % at 25mpa sintered pressure and it was 91. 4 % at 12mpa. reducing heating rate enhanced the density of sample. the density was more than 98 % and had finest microstructure with a heating rate of 100 ? / min, it was 94. 8 % at 300 ? / min heating rate

    相同燒結條件下，燒結壓力為25mpa的tio :燒結體的相對密度為98 . 7 % ，而12mpa的僅為91 . 4 % ;以100 / min升溫的燒結體中晶粒形貌均勻，相對密度達98 %以上，而以300 / min升溫的燒結體中晶粒形貌不均勻，部分晶粒已異常長大，有大尺寸的氣孔存在，相對密度為94 . 8 % ，當然過低的升溫速率會延長燒結時間，燒結時間的延長也會引起晶粒的快速長大。
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