晶體間界 的英文怎麼說

中文拼音 [jīngtǐjiānjiè]
晶體間界 英文
crystal boundary
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Z. zhang and w. geng, " direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers ", phil. mag. lett., 65 ( 1992 ) 211 - 218

    「十面體準晶與其表面晶體之間界面失配位錯的直接觀察」 ， ， （英國）
  2. In the hardware design, the paper completes modules ’ design like outside memory, patulous a / d, patulous d / a, rs232 communication, ecan communication, led control, keyboard control, distant control, emulation, reset, logic voltage switch, dsp supply power regulate and ac - dc power circuit, as well as room layout design like anterior panel, back panel etc. and dsp transfers data with peripheral equipments except outside memory using serial ports. besides, the whole circuit is configured in interrupt response. thus, it can meet system demand as well as take full advantage of tms320f2812 ’ s hardware resource. in the software design, the paper finishs programs like the interface programms intercommunicates with people, the distant control program, ad and da modules ’ control program, in addition, the paper select the velocity and acceleration state - feedback algorithm and is written in the program. the software design uses dsp integrate exploiting environment named ccs2. 2 of ti inc. as software instrument, and programs with the combination of c language and assembly language. moreover, in order to maintenance or modify the software expediently and shorten software ’ s exploitation time, the design adopt software modularization technique. finally, some air cylinder experiments are carried out to proved that the pneumatic controller is very practical

    在硬體設計中，本文完成了片外存儲器擴展、 a / d擴展、 d / a擴展、 rs232通信介面、 ecan通信總線介面、液晶顯示控制、鍵盤控制、遠程控制、模擬、復位、邏輯電平轉換、 dsp工作電源校正電路和ac - dc電源等模塊設計以及控制器前面板、後面板等的空間布局設計。其中dsp與除外部存儲器的外圍設備之間的數據傳送全部採用串口通信，同時系統電路配置成中斷響應方式，這樣既滿足了系統要求，又充分利用了tms320f2812的硬體資源。在軟體設計中，本文完成了人機界面功能模塊、遠程控制模塊、 ad擴展模塊、 da擴展模塊、速度和加速度狀態反饋的控制演算法的程序設計。
  3. Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper

    文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。
  4. And during each period of the process of the crystalline basement stick, the interface with relatively bad welding had coupled movement with the overlying layer. as a result, the overlying layer happen to be dip - slip drag

    研究認為，結晶基底在拼貼焊合過程中，其地體拼貼面之間焊合程度較差的界面在後期各階段的構造活動中，與上覆地層發生禍動。
  5. With carbon content increasing, the carbide network on the fertile grain boundary sprouting and propagating. the fracture mode has been changed from cleavage to along boundary and the intergranular corrosion induced by solution chromium decreasing

    隨碳含量提高，晶界上碳化物萌發、擴展呈網狀，鑄件脆斷由解理斷裂發展為沿晶斷裂，同時鐵素體不銹鋼晶間腐蝕傾向增大。
  6. Sem, afm, epma micrographs indicate that pore size distribution of membranes is narrow ; thickness of membrane is about l - 2um and gradual interface between membrane and substrate is continuous and uniformity

    Sem分析發現膜面較為平整、無開裂且晶粒輪廓清晰，孔徑分佈較窄，膜厚大約在1 2 m之間，膜與基體的界面連續較均勻。
  7. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  8. The microwave magnetic sintering can not only lower the sintering temperature and shorten the sintering time, but also decrease the micro - grain size of magnets and make intergranular phase and grain boundary of main phase distributed well. the abnormal grain growth was found in conventional sintered ndfeb magnets, which may be due to the greater particle size and uneven distribution of powder, and higher sintering temperature and longer sintering time. of course, the abnormal grain growth would deteriorate the magnetic properties

    微波磁場燒結的不但降低燒結溫度，縮短燒結時間，而且使磁體整體加熱，受熱更均勻，因而磁體晶粒更細小，並且主相晶粒邊界趨于規則化，晶間相的分佈更均勻；在常規燒結的磁體中則出現了晶粒異常長大現象，造成這一現象的原因，一方面可能是燒結溫度過高或燒結時間過長，另一方面可能是磨製的粉體均勻性較差，存在的大顆粒被許多細小顆粒包圍，在燒結過程中，大顆粒不斷吞併小顆粒，逐漸長大，而異常長大的晶粒自然會導致磁體性能的惡化。
  9. The boundary of ferrite has been clarified and fined by adding re into crsomo. the intergranular corrosion induced by solution chromium decreasing can be restrained for nb, v, ti combing carbon in the steel. the wear resistance of stainless steel can be increased for the precipitation of microalloyed carbides

    其中，稀土能夠凈化鐵索體晶界，並起到變質劑的作用，細化鐵素體晶粒，改善不銹鋼的韌性；鈮、釩、鈦能夠與鋼中的碳結合，減少固溶鉻的損失，從而避免晶間腐蝕，同時細小微合金碳化物的沉澱析出可提高不銹鋼的耐磨性。
  10. The influence of nano - al2o3 on the sintering and the properties of the si3n4 ceramics was researched in this paper. the samples with different amount of nano - al2o3 were obtained by using pressureless sintering at 1600, 1650, 1700 in the nitrogen atmosphere. the microstructure and the composition of the ceramics were determined by the means of x - ray, sem, micro - hardness meter etc. it is show that the sisty ceramics can be densified at 1650c to % percent of the theory density through the addition of nano - al2o3 ( the value could be 90 percent by other technique ). the crystalline growth of the cylindrical - si3n4 and the ratio of its longitude to its diameter are increased with the addition of nano - al2o3. a uniform microstructure and an fined crystal as well as more sialon phases can be obtained in the si3n4 ceramics through the addition of that

    實驗結果表明：在碳管爐中、氮氣保護下進行燒結，添加劑為納米al _ 2o _ 3粉末時，由於納米粉末的高活性、高燒結驅動力，在1650就可使si _ 3n _ 4完全地燒結，並使其緻密度可達理論密度的96以上（比其它工藝高6左右） ；同時，納米al _ 2o _ 3地加入大大促進了長柱狀? si _ 3n _ 4的生長和發育及柱狀晶長徑比的提高，使微觀結構均勻、細化，形成了更多力學性能優異的固體? sialon相，減少了不利於陶瓷材料性能的晶間玻璃相，凈化了晶界。
  11. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  12. Abstract : the development of stealthy materials in the past several d ecades from the second world war up to now is comp endiously reviewed in this paper. recent study of new stealthy materials, suc h as ceramic materials and conducting polymer composites etc, is summarized from three areas of thermal resistance ， smart and plasma steal thy materials, and developing trend of the stealthy mat erials is also predicted in this paper

    文摘:簡單回顧了從二次世界大戰至今幾十年間，國外隱身材料的發展歷程；系統綜述了國外在陶瓷材料、導電高分子材料、晶須材料、納米材料、手征材料等新型隱身材料研究方面所取得的進展；從耐高溫隱身材料、智能隱身材料、等離子體隱身三個方面入手，重點介紹了國外近年來在隱身材料領域的最新進展；並且指出了隱身技術未來的發展方向。
  13. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  14. The structure and properties of interfacial region of liquid crystals ( i. e the layers adjacent to a solid walls ) are obviously affected by the solid walls. therefore, the investigations of interface properties of liquid crystals have significance of theory and extensive prospect of application in this paper, the molecular field theory and a two - particle cluster theory are presented to study thin nematic liquid crystal films confined by two type solid substrates, respectively

    目前液晶被廣泛用於光電顯示器中，固體界面對液晶界面層（鄰近基板表面的液晶層）的結構、性質有較大的影響，因此，對液晶與固體表面間的界面物理性質和規律研究，具有重要的理論意義和廣闊的應用前景。
  15. The results showed that the in - situ formed tibi particles which had a size of about 50nm, exhibited a homogenous dispersion in the copper matrix. moreover, the interface between the nanoscale particles and the copper matrix was clean, and there was no certain location relationship. due to their reinforcement, the tensile strength and hardness of the in - situ cu - tib _ 2 nanocomposite significantly improved

    通過光學顯微鏡、 tem 、 xrd等對cu - tib2原位復合材料進行了金相組織、微結構分析，原位復合材料的鑄態金相組織中彌散分佈著團簇狀的tib2顆粒；形變態金相組織中tib2顆粒呈纖維狀排列； tem觀察表明：在基體內存在著尺寸約為50nm 、彌散分佈的tib2顆粒，且tib2顆粒與基體之間界面清晰，但由於tib2結構與銅晶體結構的差別較大， tib2顆粒與基體之間無固定的位向關系；納米tib對銅基體有良好的增強作用。
  16. With plating time going on, the nano - polycrystal gathering grows in two dimensions, and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface. because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel, the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated, and then their size is smaller. the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content, the microstructure of coating turns from nano - crystalline to the amorphous

    隨著施鍍時間的延長，納米晶聚晶體在橫向二維生長的同時，在納米晶聚晶體的表面上也進行著三維方向的新的一層聚晶體的生長；在調質態45鋼表面，由於其具有比較高的晶界和缺陷密度，因此在沉積初期，納米晶聚晶體的成核密度也較大，從而在二維方向聚晶體的尺度較小，鍍層沉積初期表現為緻密細小的鱗片狀組織。
  17. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  18. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  19. To significantly improve both strength and durability of repair interfacial layer between old and new concrete, two attempts were firstly put forward in this thesis : ( 1 ) a kind of new modified primer would be produced by introducing shrinkage reducing admixture into cement mortar, which may both reduce the shrinkage of the interfacial layer, and lessen the content of large crystal in the repaired interface layer, accordingly, remarkably increase the van der waals force of interfacial layer

    為大幅度提高新老混凝土修補界面層的強度和耐久性，本文首次提出並實現兩個設想： （ 1 ）以國產減縮劑為外加劑，配製新型改性水泥砂漿界面劑。該界面劑既能減少界面層宏觀干縮裂縫，又不增加大晶體，使界面層形成密實的微細觀結構，顯著提高粘結界面層內晶體間的范德華力。
  20. Different element in some interface change in evidence, but different element in other interface change gradually. the interface often have some hole and a mass of one element. in w - mo fgm, because the different rime temperature, the size of mo grain differ from the size of w. in w - mo - ti fgm, mo - ti layer rich in ti, there are more polygonal a

    顯微組織特徵研究表明， w - mo系和w - mo - ti系梯度功能材料整體緻密，有的宏觀層間界面明顯，在界面處成分發生突變，而且還有氣孔、顆粒偏聚等缺陷，有的宏觀層間界面處成分變化平緩； w - mo系梯度功能材料由於w 、 mo的再結晶溫度不同，梯度層顆粒粒徑有顯著差異； w - mo - ti系梯度功能材料中，以ti為主的mo - ti混合區，主要以多角形固溶體存在，富ti區主要以多角形相存在。
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