有偏壓的電極 的英文怎麼說

中文拼音 [yǒupiānyādediànjí]
有偏壓的電極 英文
biased electrode
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 偏 : Ⅰ形容詞1 （不正; 歪斜） inclined to one side; slanting; leaning 2 （只側重一面） partial; prejudi...
  • 壓 : 壓構詞成分。
  • 的 : 4次方是 The fourth power of 2 is direction
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電極 : electrode; pole
  1. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  2. Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain

    有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。
  3. Next, basing on discrete electric potential, plots the distributing figure of the electic potential and electic field, and analyzes relationship between the operational characteristics of static induction transistor and the structure parameter and bias voltage

    其次依據求得的離散電位值，繪制相應的電位分布圖形和電場分布圖形。最後通過對圖形的分析，解析有機靜電感應三極體的工作特性與器件結構參數和所加偏壓的關系。
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