有源襯底 的英文怎麼說

中文拼音 [yǒuyuánchènde]
有源襯底 英文
active substrate
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 有源 : [電學] active有源電路 active circuit; 有源器件 active device; 有源天線 active antenna; 有源衛星 active satellite
  1. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  2. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  3. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用熱蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導，研究了由電子束照射產生的有源（ f _ 2和f _ 3 ~ +色心）溝道的室溫寬帶光致發光特性。
  4. Microelectronic circuits in which the passive components and their metallic interconnections are formed directly on an insulating substrate and the active semiconductor devices ( usually in wafer form ) are added subsequently

    一種微電子電路器件，其中的無源元件及內部金屬連線直接在絕緣襯底上形成，然後再加上有源半導體器件（通常以大圓片形式給出） 。
  5. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
  6. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  7. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
  8. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  9. Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage

    研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。
  10. A monolithic microwave integrated circuit ( mmic ) is a microwave circuit in which the active and passive components are fabricated on the same semiconductor substrate. mmic, having advantages of small size, light mass, high reliability and excellent reproducibility, finds use in a variety of microwave system, especially in airborne radar and space applications

    單片微波集成電路（ mmic ）是將有源元件和無源元件都集成在同一個半導體襯底上的微波電路；具有尺寸小、重量輕、可靠性高、生產重復性好等優點，廣泛應用於各種微波系統，特別是機載雷達和衛星通信等方面。
  11. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
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