未摻雜的 的英文怎麼說

中文拼音 [wèichānzáde]
未摻雜的 英文
unallayed
  • 未 : Ⅰ副詞1 （沒） did not; have not 2 （不） not Ⅱ名詞1 （地支的第八位） the eighth of the twelve ear...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 的 : 4次方是 The fourth power of 2 is direction
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. A new laser source of optical communication, erbium - ytterbium codoped phosphate glass waveguide laser that was provided with more prominent performance than semiconductor distribution feedback ( dfb ) laser, has been investigated globally from 1990s. the laser can meet many rigorous demands of wdm systems. the 1. 54 m laser emitted by the laser accords with the interrelated standard of international telecommunications union ( itu ), therefore, a splendent foreground can be predicted about this kind of laser in future optical communication

    基於鉺、鐿摻雜磷酸鹽玻璃基片的光波導激光器是一種新型通信光源，具有傳統的分佈反饋半導體激光器所不能比擬的優點，能滿足波分復用/密集波分復用技術對光源提出的諸多高新要求，所發射的1 . 54 m激光符合國際電信聯盟規范，在未來光通信中有著廣闊的發展前景。
  2. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  3. We have prepared a series of neodymium binary / ternary complexes, such as nd ( acac ) 3 ' 2h2o, nd ( tfa ) 3 ' 2h2o, nd ( hfa ) 3 ' 2h2o, nd ( dbm ) 3 ' h2o, nd ( acac ) 3phen, nd ( tfa ) 3phen, nd ( hfa ) 3phen, nd ( dbm ) 3phen, nd ( tta ) 3 ( tppo ) 2, nd ( hfa ) 3 ( tppo ) 2, nd ( acac ) 4hpy, nd ( tta ) 4hpy and ndq3. the effects of organic ligands, synergistic coordination agents and different substitution groups for - diketones on effective line width and photoluminescence intensity of neodymium complexes were investigated. the photoluminescence spectra indicate that synergistic coordination agents can shield neodymium ion and impede water molecules penetrating into inner coordination shell to satisfy large coordination number of nd3 + during hydrous synthesis process, so the luminescence intensity of neodymium ternary complexes is stronger than that of neodymium binary complexes

    發光光譜研究表明，由於協同試劑的參與，屏蔽了水分子參與配位，降低了羥基（ oh ）對釹離子激發態能級~ 4f _ （ 3 2 ）的猝滅，三元配合物的熒光強度均比二元配合物強，其中配合物nd （ tta ） _ 3 （ tppo ） _ 2在1340nm處的熒光強度最強，適合作為摻雜的光學活性物質，來制備有源光波導材料；在有水工藝條件下，單純地氟化配體未必能提高釹配合物的近紅外發光性能。
  4. We fully utilized the characteristics of the deficient electron structure ( carbon sp3 and boron ) and easy oxidation introducing - oh on bdd electrode surface to preparation of biosensors, which were used to investigate the electrochemistry of biological molecules and be rapid, sensitive

    利用bdd電極的表面缺電子結構（ sp3雜化碳和摻雜的硼）和易於氧化引入- oh的特點，在氧化或未氧化的bdd電極表面修飾化學/生物物質製成化學/生物傳感器，研究生物分子在電極表面的電化學特性，並實現對生物分子的準確、快速、靈敏、簡便測定。
  5. It is showed that after doping s the bn thin films of n - type conductivity are obtained

    研究表明，未摻雜的氮化硼薄膜電阻率為為1
  6. One of the typical solutions to this problem is to set buffers on both sides of the base

    解決這個問題的典型方法就是在基區兩側引入一個未摻雜的sige緩沖層。
  7. 2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity

    摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
  8. In both of the two doped models, the calculation results show that their conductivity is higher than that of the non - doped model, while the seebeck coefficient and thermal conductivity are lower than the non - doped on e

    兩種摻雜模型的電導率都高於未摻雜的ca _ 3co _ 2o _ 6 ，而seebeck系數和熱導率都降低。
  9. 2 、 in order to solve the phenomenon of the outdiffusion of the base dopant, two solutions are suggested : 1 ) the sige : c base can effectively solve the outdiffusion problem ; 2 ) the undoped buffer layer can constrict the outdiffusion phenomenon

    2 、為了解決基區雜質外擴現象，提出了兩種方案: 1 ）採用摻碳的sige : c基區層，能夠有效消除外擴問題; 2 ）採用未摻雜的緩沖層i - sige ，能夠有效抑制外擴現象。
  10. Results obtained by different electrochemical measurements show that the amounts of co in samples have great influence on their electrochemical capacities. while measured co was doped, the electrode has better capacity property, lower impedance and higher utilization, and can be charge - discharged at high current of 40ma

    電化學測試結果得出化學摻雜的配比對電化學性能影響很大，適量摻雜的mno _ 2電極比未摻雜的mno _ 2電極具有更好的循環性能和電容性能。
  11. The x - ray diffraction, scanning electronic microscope and the squid were used to characterize the properties of the mgb2 core in mgb2 / fe tapes and wires. the effect of the proportion of mg, b and sic as well as the sintering parameters on the phase formation, microstructure and the critical current densities of mgb2 / fe tapes and wires was discussed in details. the results showed that the high purity of mgb2 core could be synthesized by both the traditional vacuum sintering and the sparking plasma sintering and the vacuum sintering environment restrained the oxidation of mg effectively

    相對于傳統真空燒結， sps燒結方式成相速度快、樣品晶粒細小均勻、 mgb2超導芯緻密性好、晶間連接優良，因而sps燒結樣品的臨界電流密度明顯高於傳統真空燒結樣品，其中未摻雜的帶材樣品經過sps800 ， 15分鐘燒結后，自場下的臨界電流密度jc值在10k時達到8 . 64 105a / cm2 ，而且隨著測量溫度和外加磁場的增加， sps燒結樣品的臨界電流密度下降率比傳統真空燒結樣品緩慢，在20k ，自場時為5 . 97 105a / cm2 ， 20k ， 3t時，臨界電流密度值仍大於104a / cm2 。
  12. The results show that mno which not be modified can not be use as electrode active materials because of its poor electrochemical activity. meanwhile, the rechargeabilify of mno modified by bi and pb is improved. bismuth could prolong the second electron equivalent discharge and lead could improve the first electron equivalent discharge performance

    I44 ）對熱分解產物進行了充放電，循環伏安，恆電流極化， tafe曲線分析，交流阻抗分析，得出未摻雜的mno直接作為電極活性材料，其電化學活性很差，但通過摻bi ， ph進行改性，提高了其可充性， 1的影響主要在於第二電子放電， ph則可以延長第一電于放電
  13. The highest jc of 8. 64 105a / cm2 at 10k, 0t was obtained in the un - doped mgb2 / fe tape sintered at 800 for 15 minutes by sps. it is worthwhile to note that the jc value was decreased much slowly in this sample with the increase of the testing temperature and magnetic field. for example, the jc was 5. 97 105a / cm2 at 20k, 0t, and at 20k, 3t the jc value was

    從目前試驗結果看，摻雜量為5mol %時線材性能較好，樣品的臨界電流密度在自場下達到6 105a / cm2 ，並且sic摻雜改進了樣品在高場下的jc值，在4t時，摻雜線材樣品的臨界電流密度大大超過未摻雜樣品，這是由於sic的摻入生成了細小均勻的mg2si ，分佈在晶粒
  14. The structure was analyzed by x - ray diffraction. it is found that the samples are randomly origined and the structure has been changed little by doping

    用x射線衍射對它們的結構進行了分析，發現這些樣品都是隨機取向，且摻雜基本未改變材料原來的晶體結構。
  15. The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent

    水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。
  16. Diamond film un - doped is highly insulated and so is not processed by electrical discharge machining method

    未摻雜cvd金剛石膜是高度絕緣的，不能採用如電火花等加工導電聚晶金剛石（ pcd ）的方法和設備對其進行加工。
  17. It was found that the acidification of water could also improve the photocatalyst. the photocatalyst of v and si co - doped tio2 films is improved and the hydropholicity of v and si co - doped tio2 films is reduced.

    其中， 3mhpc摻雜薄膜樣品和x二0 .巧的釩摻雜薄膜光催化性能和親水性性能都比未摻雜tio :薄膜樣品好，可作為自清潔薄膜。
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