未退火的 的英文怎麼說

中文拼音 [wèituìhuǒde]
未退火的 英文
unannealed
  • 未 : Ⅰ副詞1 （沒） did not; have not 2 （不） not Ⅱ名詞1 （地支的第八位） the eighth of the twelve ear...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 的 : 4次方是 The fourth power of 2 is direction
  • 退火 : [冶金學] anneal; annealing; back-out
  1. And as for the vague something - was it a sinister or a sorrowful, a designing or a desponding expression ? - that opened upon a careful observer, now and then, in his eye, and closed again before one could fathom the strange depth partially disclosed ; that something which used to make me fear and shrink, as if i had been wandering amongst volcanic - looking hills, and had suddenly felt the ground quiver and seen it gape : that something, i, at intervals, beheld still ; and with throbbing heart, but not with palsied nerves

    至於那種令人難以捉摸的東西那種表情是陰險還是憂傷，是工於心計還是頹唐沮喪，一個細心的旁觀者會看到這種表情不時從他目光中流露出來，但是沒等你探測暴露部分的神秘深淵，它又再次掩蓋起來了。那種神態過去曾使我畏懼和退縮，彷彿徘徊在火山似的群山之中，突然感到大地顫抖，看到地面裂開了，間或我還能見到這樣的表情，我依舊怦然心動，卻並未神經麻木。
  2. Standard specification for welded, unannealed austenitic stainless steel tubular products

    焊接未退火的奧氏體不銹鋼管形製品標準規范
  3. High deposit temperature leads to transmission falling of the unannealed films. but the average transmission of sample deposited at 500 is higher than that at 450

    未經退火的薄膜透過率隨沉積溫度升高而呈現下降的趨勢，但500樣品比450的平均透過率高。
  4. The nano - crystals of si are found embedded in the amorphous matrix in the unannealed sample. the crystallinity of the films is increased with raising deposit temperature

    研究發現，未經退火處理的薄膜是納米硅品粒鑲嵌于非晶介質中，並與氧化硅晶粒形成復合的特殊結構。
  5. In acid copper sulphate solution, the nc copper has a more negative corrosion potential which is decreasing with reducing the grain size and diffusion impedance was only found in the as - prepared and as - annealed at 180 ? nc copper due to the diffusion within the pores and channels on the surface. both the tafel plots and eis study demonstrated that the nc copper exhibits a higher corrosion current and lower polarization resistance than its mc couterpart

    在酸性硫酸銅溶液中，納米晶銅的腐蝕電位比微米晶銅要負，並且隨著晶粒尺寸的減小而降低。 eis研究表明，未退火的和180退火的納米樣品中發現了擴散阻抗，與表面孔洞和通道中的擴散有關。極化曲線外推法和電化學阻抗研究都表明納米晶銅的腐蝕電流比微米晶銅高，而極化電阻要低。
  6. Abstract : with simulated annealing approach based on simple method, the dynamic system of some submarine - launched missile carrier s water trajectory is identified, and the effects of no - modeling uncertainty and dimension of parameters to be identified on overall identification precision are investigated

    文摘:運用基於單純形的模擬退火演算法對某潛射導彈運載器水彈道動力學系統進行了辨識，並探索了未建模不確定性及待辨識參數矢量的維數對辨識精度的影響。
  7. A large amount of nano - crystals are found in the film when the sample was annealed for one hour at 500 ? with the crystallinity being increased to 50 %

    研究結果發現，未經過退火處理的薄膜是納米晶粒鑲嵌于非晶介質的復合薄膜，薄膜中的結晶程度不是很高。
  8. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  9. In this article, low temperature photoluminescence measurements have been performed on as - irradiated and postannealed n - type 6h - sic, the postannealing temperature is up to 1650 ?. three sharp lines at 478 ^ 483. 3 and 486. 1nm respectively were observed for the first time in the as - irradiated samples and argued to be due to vacancy - like induced by irradiation

    對經輻照后未退火的n型樣品的低溫光致發光實驗中，首次觀察到三條尖銳的譜線，分別位於478 . 6 、 483 . 3和486 . 1nm位置，該系列譜線可能與輻照誘生的點缺陷有關。
  10. The effect of anneal on the gmr of co ion implantation discontinuous multilayer films is greater than that of without ion implantation films

    退火對離子注入后的非連續多層膜gmr效應的影響比未注入離子的非連續多層膜gmr效應的影響顯著。
  11. 3 we use vsm, for annealing and do not annealing sample have gone on magnetic properties measure, combination origin software shows for the loop analysis of magnetic hysteresis : do not coercivity of annealing pellet membrane between38. 898oe and 96. 487oe, the coercivity of annealing sample between 30. 327oeand91. 591oe

    3 、用vsm對退火和未退火樣品進行了磁性能測量，結合origin軟體對磁滯回線分析表明:未退火顆粒膜的矯頑力在38 . 898oe ~ % . 4870e之間，退火樣品的矯頑力在30 . 327oe ~引
  12. The annealing also changes the grain morphology. the p grains from the amorphous layer are finer than in the other cases. silicide grains grow towards the substrate at high annealing temperature and finally shrink into isolated islands, thus deteriorating the silicide / si interface smoothness

    由於非晶的形成，使得退火后晶粒要經重新形核和長大的過程，所以在同樣的退火條件下，與未形成非晶的樣品比，硅化物顆粒要小。
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