本徵導電 的英文怎麼說

中文拼音 [běnzhǐdǎodiàn]
本徵導電 英文
intrinsic conduction
  • 本 : i 名詞1 （草木的莖或根）stem or root of plants 2 （事物的根源）foundation; origin; basis 3 （本錢...
  • 徵 : 名詞[音樂] （古代五音之一 相當于簡譜的「5」） a note of the ancient chinese five tone scale corre...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  1. For this purpos, from the point of the log geology, aimed at the actuality of the current fractured reservoir log geology interpretation and evaluation, based on synthetical analysis of the current domestic and foreign fruit of fractal dimension investigation of reservoir fracture, using the method and technique of fractal dimension, through the further discussion of the fractal dimension characteristics of m index and n index in the log interpretation archie model in a sample way and through the theoretic reasoning to the fractal dimension dfa and m index of fractured reservoir interval ' s log curve, according to the geophysical signification of the fractal dimension dfa of fractured reservoir interval ' s log curve shape : the more complicated the change of the curve shape is, the larger the its dfa value is, then the more complicated space structure of fracture and pore, then the higher value of m index of space structure of fracture and pore, and so on, the text propounds an improved method, based on box dimension, of covering log curve with scale grid, and by programming computes the dfa and its m index value of fractured reservoir interval ' s log curve, for instance, ac and rt curve, ect, then further puts this technique into application investigation, and makes analysis of application effects in the reservoirs located in l area of qx oil field from three aspects : 1. the dfa and its m index value of fractured reservoir interval ' s log curve, for instance, ac and rt curve, ect, which are derived from computing, is used to identify reservoir type by crossplotting m index with the product df _ acrt of fractal dimension of acoustical wave log curve and restivity log curve and by experiential discriminance plate of reservoir type in l area of qx oil field

    因此，對該區裂縫性儲集層的類型識別、孔滲特徵的測井地質解釋以及儲層裂縫的發育和分佈規律進行深入的研究便成為本文研究的出發點。為此，本文從測井地質的角度，針對當前裂縫性儲層測井地質解釋與評價的現狀，在綜合分析當前國內外儲層裂縫的分形分維研究成果的基礎上，利用分形分維方法和技術，通過對archie測井解釋模型中的m指數、 n指數的分形分維特性的深入淺出的論述以及裂縫性儲層段測井曲線分維d _ （ fa ）與m指數的理論推導，根據裂縫性儲層測井曲線形態分維值的地球物理意義? ?曲線變化越復雜，則其分維值d _ （ fa ）越大、裂縫孔隙空間結構越復雜、裂縫孔隙空間結構指數m值越高等特徵，提出了改進的基於盒維數的測井曲線網格覆蓋法，編程計算了裂縫性儲層段常規測井曲線（如聲波和電阻率曲線）上分形分維值及其m指數值，進而從以下三個方面對qx油田l區塊的裂縫油藏進行應用研究，效果十分理想： 1將計算得到的可變的m指數與聲波和電阻率分維之積df _ acrt進行交繪，採用儲層分維值分類技術統計分析這些參數變化的規律，並結合qx油田l區塊儲層類型經驗判別圖版，從而實現qx油田l區塊下白堊統的裂縫性儲層的類型識別。
  2. In this dissertation, by virtue of self - developed test system, the studies on the optical and electric properties of oled of little molecule with different material, configuration manufactured with different processes have been presented. concepts of chromatics and the mechanism of carrier transportation in the semiconductor device have been applied here to qualitatively analysis and interpret the result of measurement. some interesting conclusions have been given which will be helpful in the further optimization of the performances of oled

    在oled研究過程中，對器件性能的表徵工作起到十分重要的作用，本文利用自主開發的測試平臺（包括軟體、硬體的搭建） ，對不同材料、結構、工藝的小分子oled器件進行了光學、電學性能的測試和評估，並依照色度學、半導體電輸運等理論成功的對測試結果作出了定性分析，揭示了制約器件工作性能的相關因素，為器件性能的進一步優化奠定了基礎、指明了方向。
  3. For longer wavelengths a number of extrinsic photoconductive devices exist.

    對于更長的波長，有許多非本徵光電導器件可用。
  4. Proceeding from the advantages of information technology and network technology used in education, the present paper discusses how humanised modern education technology help optimize teaching methods through building up a two - way c - commerce teaching mode, with teachers playing the leading role and students as the center

    摘要從信息技術和網路技術應用在教育領域的幾大優勢出發，結合電子商務的特徵，論述了現代教育技術在「以人為本」的基礎之上優化教學手段，通過建立雙向互動的以教師為主導、學生為主體的新的電子商務教學模式，進而優化電子商務的教學。
  5. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  6. Standard methods for measuring conductivity type of extrinsic semiconducting materials

    非本徵半導體材料導電類型測試方法
  7. Intrinsic semiconductors are those in which the electrical behavior is based on the electronic structure inherent to the pure material

    本徵半導體是電學性質基於純材料的電子結構的半導體。
  8. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  9. An anomalies in the dielectric constants and loss tangent have been observed experimentally in the ferroelectromagnet near the antiferromagnetic transition temperature, indicative of a coupling between the ferroelectric and magnetic ordering, but the nature of the mechanism of magnetoelectric coupling and the form of interaction is still an important and debated issue

    而另一類是鐵電磁體，它除了具有一般磁電體的性質外，還由於固有的本徵磁有序和鐵電有序的耦合使之存在自發的磁電效應。實驗上已經發現了由於自發的磁電耦合導致的介電異常和損失正切。
  10. The results suggested that the macroscopic nonlinear conduction might originate from a combination of microscopic conduction processes, which involves the electronic transporting across the intrinsic nonlinear microscopic components and tunneling or hoping across thin polymer bridges present on the conducting network

    因此認為，尼龍6納米石墨復合體系的宏觀非線性電導為微觀電導過程的綜合結果。其中包括本徵非線性組合元件的電導貢獻以及發生在導電網路中的聚合物橋鏈上的隧道和躍遷效應。
  11. Abstract : the funciton of intrinsicall conductive polymer and the unique nature of polyaniline are introduced

    文摘:介紹了本徵導電高聚物的特點及聚苯胺獨特的性質，對聚苯胺導電纖維的制備進行了綜述。
  12. According to the structure and preparation, electric conductive polymer can be divided into two categories : intrinsic and complex

    按結構及制備方法不同，可將導電高分子材料分為本徵型與復合型兩大類。
  13. According to the safety requirements of underground electrical equipment, an excellent intrinsically safe pilot circuit is designed, the fault characteristics and protection principle of asynchronous motor with single speed and double speed used in underground are simultaneously analyzed, the function parameters corresponding to the fault protections for high capacity motors are determined. at the same time, module program design method and compiled monitoring program and function subprograms are emphatically described

    根據礦井生產安全要求，設計了性能優良的本質安全型先導電路，分析了單速異步電動機和雙速異步電動機的各種故障特徵和保護原理，確立了每種故障保護的動作指標，介紹了結構化程序的設計方法，設計了監控程序及各功能模塊程序。
  14. A class of exact solutions of the dirac equation are obtained for an electron in the electromagnetic field of a wave guide formed by two pairs of hyperbolic cylinders

    摘要研究了位於由兩對雙曲柱面構成的波導管電磁場里的單電子的性質，得到了單電子在場中狄拉克方程的新一類精確解；計算了極化算符的本徵函數。
  15. The morphology, chemical compositions, crystal structures and some properties of these obtained nanowires were systemically characterized. < wp = 6 > because of their novel properties and unique structures, one - dimensional nanostructrue semiconductor materials have generated a tremendous amount of interests in fundamental and potential promising applications in electronic and photoelectronic devices. we fabricated cdse, te and cdte nanowires by direct current ( dc ) electrodeposition in porous anodic aluminum oxide ( aao ) templates

    本論文採用電化學模板合成法制備出了幾種新型的納米線，並對它們的形貌、組成、晶體結構及其他一些性質進行了表徵；發展了一種用紫外可見光分光光度法分析電沉積在導電玻璃上的ni - fe合金鍍層的方法；用模板脈沖電沉積法制備了fe20ni80 / ag多層納米線，並對它的形貌進行了初步表徵。
  16. Xps measurement results exhibited that no detectable fe2 + existed in the compound of a ~ fe2os doped with sn4 +, which suggest that oxygen anions or cation vacancies not only can compensate the charge balance but also significantly enhance the gas - sensitivity of a - fe2o3 based gas sensors. ( 3 ) conductive type of a - fe2o3 doped with sn4 + is showed in the n - type by hall measurement and gas - sensitivity measurement. the results of measurements and characterizations suggest that the sensitive mechanism of the a - fe2o3 based nano - materials prepared by this work be the surface resistance controlled mode

    （ 3 ）首次進行了霍爾測量，並結合氣敏測試結果，從不同方面證實了摻錫- fe _ 2o _ 3納米半導體的導電類型是n型；綜合粉體的電導率?溫度曲線、元件的電阻?加熱電流特徵曲線、元件在不同氣氛下的電阻特性以及比表面積等測試表徵結果，得出本文所製成的- fe _ 2o _ 3基氣敏元件的氣敏機理特徵屬于表面控制型。
  17. However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films

    但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。
  18. In this dissertation polyaniline conjugated conducting polymer with different structural texture and properties is prepared, using ( nhu ) 2s3oa / llci solution system. the molecular structure of undoped polyaniline is characterized. polyaniline with different conductivity can be gotten by changing the type of dopant and doping condition

    再採用（ nh _ 4 ） _ 2s _ 3o _ 8 hci溶液體系制備出不同性能的聚苯胺導電聚合物，對不同的鹽酸濃度、不同氧化劑與苯胺的摩爾比、不同的溫度下合成的聚苯胺進行了性能上的比較，並對本徵態聚苯胺的結構進行了表徵。
  19. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
  20. The natures of the probe and formation mechanisms in these techniques are different ; therefore, the images of spm can reflect different properties of sample surface. in this work, related properties of ferroelectric thin film were investigated as followed : the main factors determining the image formation of piezoresponse force microscopy ( pfm ) and scanning nonlinear dielectric microscopy ( sndm ) were studied. to avoid the misreading of the same conductive tip with different state, a new method of polarization distribution mapping with nonconductive tip was proposed, and the result of experiment demonstrated that the polarization distribution of ferroelectric thin films could be characterized well by the new approach

    本工作主要分為以下幾個部分:從研究鐵電薄膜的壓電響應力顯微鏡（ pfm ）和掃描非線性介電顯微鏡（ sndm ）成像的影響因素入手，討論了針尖對成像質量的影響;為降低實驗成本、減小導電探針針尖狀態變化對鐵電薄膜微區電性能測試的負面影響，提出了以非導電探針檢測微區極性分佈的方法，並在現有spa - 300hv型spm的實驗平臺上以pfm模式成功實現了新方法對鐵電薄膜極性分佈的表徵。
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