柵導納 的英文怎麼說
中文拼音 [zhàdǎonà]
柵導納
英文
grid admittance-
By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的硅集成電路工藝技術結合電子束光刻,反應離子刻蝕和剝離等技術制備半導體和金屬納米結構,很好地解決了普通光刻與電子束光刻的匹配問題,提高了加工效率,經過多次的工藝實驗,摸索出一套制備納米結構的工藝方法,首次用電子束光刻,反應離子刻蝕和剝離等技術制備出了多種納米結構(硅量子線、量子點,雙量子點和三叉指狀的金屬柵結構) 。
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