柵極寬度 的英文怎麼說
中文拼音 [zhàjíkuāndù]
柵極寬度
英文
gate width-
The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )
在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。The main work of this thesis analyzes the organic static induction transistor ' s operational mechanism, and researchs the change of gate length, change of gate - drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor
本論文的主要工作是解析有機靜電感應三極體的工作機理，並研究了柵極長度變化、柵漏極間距變化和導電溝道的寬度變化對有機靜電感應三極體工作特性的影響。The feedback of the output voltage is the major control loop. to achieve better frequency response and disturbance rejection of the input voltage, a input voltage feed - forward system is introduced in control loop. the duty - cycle of pwm applied at the gate of power mosfet is modulated by both input and output voltage
該晶元採用的控制方式為電壓型pwm （脈沖寬度調制， pulsewidthmodulation ）控制方式，以輸出電壓反饋作為主要控制參量，同時為了提高晶元對輸入電壓擾動的響應速度，採用了輸入電壓前饋方法，將輸入電壓因素引入了反饋控制環中，通過對輸入輸出電壓的檢測，控制加在功率mos管柵極電壓上矩形脈沖的占空比，進而調節輸出電壓。The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states
Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。In this thesis, the spectral characteristics of a fiber grating are analyzed by using the coupled mode theory. the influences of various structural features such as the length, chirp, coupling coefficient and aperdization to the spectral characteristics were studied numerically with a transfer matrix method. the reflective spectral responses for fiber bragg gratings with different aperdization are analyzed, and the optimal aperdization is ob tained
首先論文利用耦合模理論對光纖光柵的光學特性進行了詳細的分析，在對比了龍格庫塔法和傳輸矩陣法這二種常用的分析方法的基礎上，選擇傳輸矩陣法著重研究了光纖光柵長度、啁啾系數、耦合系數以及各種切趾函數與其反射譜譜寬、反射率極值、時延、色散等特性的相互關系及影響。分享友人