柵極電壓 的英文怎麼說

中文拼音 [zhàjídiànyā]
柵極電壓 英文
grid potential
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 電壓 : voltage; electric tension; electric voltage
  1. This article introduces briefly the process of design and characteristic of structure of db930 tube and discusses the main problems of technology and technique which was met during the manufacture and the measures having been adopted are emphatically. it discusses the solve measures in following six aspects : the filament current is too large, carbon deposits during the carbonizing of cathode, the capacitance between the first grid and the second grid is too large, transpiring happens inside the tube, the insulation resistance between the electrodes is too lower when the filament is on and the ability of bearing high voltage is too lower

    本文簡略地介紹了db930的設計過程及其結構特點，重點論述了在試制過程中遇到的主要工藝技術問題及解決問題的措施，圍繞解決燈絲電流大、陰極碳化時積碳、一柵和二柵之間的電容大、管內蒸散、熱態時極間絕緣低、耐高壓的能力差等六個方面的問題進行了論述。
  2. I designed a measuring system which can measure the anode current 、 anode voltage 、 grid current and grid voltage at one time. working at manual mode the system can sever as a measuring instrument

    根據要求，設計一個場發射參數的測量系統，此系統，工作在手動方式下可以測量出某一時刻點的場發射的陽極電流、陽極電壓、柵極電流、柵極電壓。
  3. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  4. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  5. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  6. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  7. The feedback of the output voltage is the major control loop. to achieve better frequency response and disturbance rejection of the input voltage, a input voltage feed - forward system is introduced in control loop. the duty - cycle of pwm applied at the gate of power mosfet is modulated by both input and output voltage

    該晶元採用的控制方式為電壓型pwm （脈沖寬度調制， pulsewidthmodulation ）控制方式，以輸出電壓反饋作為主要控制參量，同時為了提高晶元對輸入電壓擾動的響應速度，採用了輸入電壓前饋方法，將輸入電壓因素引入了反饋控制環中，通過對輸入輸出電壓的檢測，控制加在功率mos管柵極電壓上矩形脈沖的占空比，進而調節輸出電壓。
  8. The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3

    詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
  9. Measurements of the electrical properties of transmitting tubes - measuring methods of grid no1 cut - off voltage

    發射管電性能測試方法第一柵極截止電壓的測試方法
  10. Measurements of the electrical properties of transmitting tubes - measuring methods of grid no1 current cut - off voltage

    發射管電性能測試方法第一柵極電流截止電壓的測試方法
  11. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。
  12. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  13. In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )

    本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。
  14. X - ray diffraction analysis and density analysis and crystal structure analysis have been adopted to analyze the grid ’ s rough. through large numbers of experiments and practice, technological condition of gas discharge and depositional temperature and depositional pressure and depositional time of all kinds of the pyrolytic grid ’ s roughs has been gained. now we can deposit small and big grid ’ s roughs successfully

    通過大量試驗研究和生產實踐，摸索並優化出不同品種規格的石墨柵極毛坯沉積的氣體流量、沉積溫度、沉積壓強、沉積時間等參數，能夠順利地沉積出性能優良的小型、大型的各類品種的石墨柵極毛坯，滿足了公司大功率及超大功率電子管的電參數要求，保證了新產品的成功開發。
  15. Hvdc light is a kind of new dc transmission technology developed from the traditional hvdc, with voltage source converter ( vsc ) and igbt as main components. the basic principles of vsvpwm are studied, and an approach to simulate vsvpwm based on pscad / emtdc is put forward in this thesis

    輕型高壓直流輸電（ hvdclight ）技術是在傳統直流輸電基礎上發展起來的一種新型輸電技術，其主要部件是以絕緣柵雙極晶體管構成的電壓源換流器（ vsc ） 。
  16. The structure of field emission triode is first simulated by magic. the tip height, tip position, tip curvature, gate aperture, and gate voltage are changed, to observe the emission current and the electron congregation

    本課題首先採用magic軟體對三極體結構的尖錐場發射陰極進行了模擬計算，分別改變尖錐高度，錐尖位置，尖錐曲率半徑，柵極孔徑及柵極電壓，觀察陽極收集電流及電子束的會聚情況。
  17. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  18. Measurements of the electrical properties of transmitting tubes - measuring methods of grid no3 cut - off voltage

    發射管電性能測試方法第三柵極截止電壓的測試方法
  19. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n - type

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的p型襯底轉變成n型。
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