柵極電流 的英文怎麼說

中文拼音 [zhàdiànliú]
柵極電流 英文
current, grid
  • : 柵名詞(柵欄) railings; paling; palisade; bars
  • : i 名詞1 (頂點; 盡頭) the utmost point; extreme 2 (地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. This article introduces briefly the process of design and characteristic of structure of db930 tube and discusses the main problems of technology and technique which was met during the manufacture and the measures having been adopted are emphatically. it discusses the solve measures in following six aspects : the filament current is too large, carbon deposits during the carbonizing of cathode, the capacitance between the first grid and the second grid is too large, transpiring happens inside the tube, the insulation resistance between the electrodes is too lower when the filament is on and the ability of bearing high voltage is too lower

    本文簡略地介紹了db930的設計過程及其結構特點,重點論述了在試制過程中遇到的主要工藝技術問題及解決問題的措施,圍繞解決燈絲大、陰碳化時積碳、一和二之間的容大、管內蒸散、熱態時間絕緣低、耐高壓的能力差等六個方面的問題進行了論述。
  2. Capacitive grid current

  3. Critical grid current

    臨界柵極電流
  4. Measurements of the electrical properties of transmitting tubes - measuring methods of reverse grids current

    發射管性能測試方法反向的測試方法
  5. I designed a measuring system which can measure the anode current 、 anode voltage 、 grid current and grid voltage at one time. working at manual mode the system can sever as a measuring instrument

    根據要求,設計一個場發射參數的測量系統,此系統,工作在手動方式下可以測量出某一時刻點的場發射的陽、陽壓、柵極電流壓。
  6. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素,通過分析mosfet的本徵參數、寄生參數對頻率特性的影響,提出了採用短溝器件、使mosfet工作在飽和區、抬高壓等提高mosfet特徵頻率的方法;分析了不同路組態對放大器頻率特性的影響、節點壓對壓模路、路頻率特性的不同影響,根據應用於雙晶體管路的跨導線性原理,提出了採用mosfet構成的模放大路、傳輸路、輸出路以及由它們所組成的寬帶放大器,獲得了良好的頻率響應。
  7. We have done a serial of experiments to study the pam and anode grid with the aids of the measurement such as constant current charge / recharge, cyclic voltammetric measure ments, electric impedance spectrum and so on

    我們通過恆充放、交阻抗和循環伏安等實驗方法和測試手段對鉛酸池的正活性物質和板進行了一系列的研究。
  8. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏脈沖崩塌測試中,發現脈沖條件下漏比直時減小大約50 % ;脈沖信號頻率對崩塌效應影響較小;當壓較小時,隨著脈沖寬度的改變漏按i0 ( + t / 16 )的規律變化。
  9. In gan hemt gate pulse experiments, drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse. the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l

    在ganhemt脈沖崩塌測試中,觀察到脈沖條件下漏比直情況下減小了47 % ;隨著信號頻率的改變,漏按ncoxw [ m + ( n + k
  10. Because of the limitation of experimental conditions we failed to form foam lead grid in the experiment. copper draw net is used as anode grid and it can improve to some extent the utilization of pam. due to human errors in the experiment we have not used the same discharge current density

    在實驗中我們試圖通過鑄造法、鍍法和還原法等一系列的實驗辦法製作泡沫鉛板,由於實驗條件的限制,沒能夠成功制得泡沫鉛,而在使用銅拉網作為正的時候,能夠使池的正活性物質利用率有提高,但由於實驗時候的失誤,沒能夠使用相同的放密度進行放,我們無法利用實驗數據比較出具體能提高的數字。
  11. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽池性能的影響、表面和界面復合速度的理論表達式;研究得到了減反射膜對太陽池短路增量比的限;建立了太陽池光譜響應、接觸阻和少子壽命等測試系統。
  12. We have made three - dimension electric conduct grid by hand and we have successfully used it as anode grid in lead - acid battery. this kind of three - dimension electric conduct grid can improve the utilization of pam by 7 - 9 % in different discharge current density and can reduce the plate electrochemical impedance to one tenth of the normal plate. also this kind of grid can improve the marginal reaction current density in a certain degree

    我們通過手工製作了三維導體板,並成功的應用於池的正作為正的板,這種三維導體板能夠在各種不同的放密度下提高正活性物質利用率7 9 ,能夠使池正板的化學阻抗降低到普通板的1 10左右,使正板的哈爾濱j _程大學碩十學位論文限反應密度略有所提高,但是這種板的耐腐蝕性能很不理想,使得所製作池的壽命很短。
  13. Measurements of the electrical properties of transmitting tubes - measuring methods of grid thermo - emission current

    發射管性能測試方法熱放射的測試方法
  14. Measurements of the electrical properties of transmitting tubes - measuring methods of grid no1 current cut - off voltage

    發射管性能測試方法第一柵極電流截止壓的測試方法
  15. In fet devices, the presence of an electrical field at the gate moderates the flow between the source and drain

    在fet器件中,場的存在會調節源和漏之間的
  16. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次,根據器件參量對閾值壓和輸出特性的影響,以提高器件的跨導和驅動能力為目的設計了strained - soimosfet器件結構,詳細分析類型和氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值,對器件進行優化設計。
  17. The permanent magnet brush - less motor is driven effectively by selecting the bootstrap components properly and dealing with the parasitics correctly. the software design is composed of c language for dsp and vhdl ( high speed hardware description language ) for cpld

    設計了基於功率mosfet和驅動晶元ir2130的功率驅動路,通過對驅動路自舉元件的合理選擇以及寄生效應的正確分析和處理,實現了無刷直機的高效驅動。
  18. X - ray diffraction analysis and density analysis and crystal structure analysis have been adopted to analyze the grid ’ s rough. through large numbers of experiments and practice, technological condition of gas discharge and depositional temperature and depositional pressure and depositional time of all kinds of the pyrolytic grid ’ s roughs has been gained. now we can deposit small and big grid ’ s roughs successfully

    通過大量試驗研究和生產實踐,摸索並優化出不同品種規格的石墨毛坯沉積的氣體量、沉積溫度、沉積壓強、沉積時間等參數,能夠順利地沉積出性能優良的小型、大型的各類品種的石墨毛坯,滿足了公司大功率及超大功率子管的參數要求,保證了新產品的成功開發。
  19. The structure of field emission triode is first simulated by magic. the tip height, tip position, tip curvature, gate aperture, and gate voltage are changed, to observe the emission current and the electron congregation

    本課題首先採用magic軟體對三體結構的尖錐場發射陰進行了模擬計算,分別改變尖錐高度,錐尖位置,尖錐曲率半徑,孔徑及壓,觀察陽收集子束的會聚情況。
  20. Measurements of the electrical properties of transmitting tubes - measuring methods of current of anode and grid

    發射管性能測試方法陽柵極電流的測試方法
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