柵氧化層 的英文怎麼說

中文拼音 [zhàyǎnghuàcéng]
柵氧化層 英文
gate oxide
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  2. In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft

    本實驗在沉積柵氧化層后立即用pecvd進行多晶硅的氫化處理。
  3. A new physical model of tddb of ultra - thin gate oxides is presented on the bases of above analysis

    為超薄柵氧化層的經時擊穿建立了一個新的物理模型。
  4. A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation

    本文提出了一個全新的熱載流子增強的超薄柵氧化層經時擊穿模型。
  5. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  6. Avalanche injection stacked gate mos

    雪崩注入多層柵金屬氧化物半導體
  7. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  8. A detailed theory analysis is made and a two - step breakdown model of ultra - thin gate oxide is presented

    對上述實驗現象進行了詳細的理論分析，提出了超薄柵氧化層經時擊穿分兩步。
  9. Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress

    與通常的fn應力實驗相比較，熱載流子導致的超薄柵氧化層擊穿顯示了不同的擊穿特性。
  10. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  11. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
  12. Therefore, the solution to the hot - carrier degradation of mos circuits is obtained. the other hot - carrier immunity techniques such as

    對抗熱載流子退化的mos器件lddnghtlydopeddrain ）結構及柵氧化層加固技術也作了簡單的介紹。
  13. The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the souce and the drain

    第一個重要的來自熱氧化組薄膜是柵氧化層，在它之下，源和漏之間就能形成導電通道。
  14. This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s

    本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。
  15. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  16. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  17. The paper is concerned with the eigen functions of optical fields in dielectrics, the theories of optical waveguide eigen mode, the characteristics of optical waveguides diffracted field, the theories of mode coupling in optical waveguides and the spectral response theories and simulating method for arrayed waveguide grating. in this paper, a set of beam propagation theory based on eigen modes analysis is set up which afforded theoretical basis for designing and analyzing awg devices. experiment of fabricating sio _ ( 2 ) layer by using porus silicon is also carried out in this paper, which is a new method for fabricating waveguide cladding layer

    本文以設計陣列波導光柵器件為目標，對介質波導光場的本徵波函數，光波導本徵模理論，光波導衍射場特性，光波導模式耦合理論和awg器件的光譜響應特性及模擬方法進行了深入研究，建立了一套基於本徵模式場分析的光波導光束傳輸理論，為波導器件的設計提供正確的理論基礎，並嘗試了利用多孔硅生長厚的二氧化硅，用於製作波導包層材料。
  18. The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici

    摘要利用高級二維器件模擬程序medici分析了多晶矽薄膜晶體管有源區的長度、體內陷阱、界面陷阱、柵氧化層厚度等幾何參數及物理參數，並研究了這些參數對薄膜晶體管特性的影響。
  19. With taking advantage of the model of two - stage h + process of interface trap formation and the role that f play in radiation hardness in gate - oxide. the above - mentioned result is deeply analyzed

    藉助界面態建立的h ~ +兩步模型和f在柵氧化層中對抗輻照加固所起的作用對上述結果進行了深入的分析。
  20. The results show that charge to breakdown qbd depends not only on the gate oxide quality but also on the voltage stress, current density and the gate oxide area

    結果表明：相關擊穿電荷q _ （ bd ）除了與氧化層質量有關外，還與電壓應力和電流密度以及柵氧化層面積有關。
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