極性半導體 的英文怎麼說
中文拼音 [jíxìngbàndǎotǐ]
極性半導體
英文
polar semiconductor- 極 : i 名詞1 (頂點; 盡頭) the utmost point; extreme 2 (地球的南北兩端; 磁體的兩端; 電源或電器上電流...
- 性 : Ⅰ名詞1 (性格) nature; character; disposition 2 (性能; 性質) property; quality 3 (性別) sex ...
- 半 : Ⅰ數詞1 (二分之一) half 2 (在 中間的) in the middle; halfway 3 (比喻很少) very little; the l...
- 導 : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
- 體 : 體構詞成分。
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The electron multiplier detector is appropriate to do ordinary detect works for its high sensitive and semiconductor photodiode ( such as silicon diode ) is appropriate to act as transfer standard detect for its high stability
倍增器的靈敏度非常高,適合日常的測量工作;半導體型光電二極體(如si二極體)的穩定性好,適合作傳遞標準探測器。Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes
肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件,與普通的pn結二極體相比,它具有正向導通電壓低,響應速度快等優良特性。Working on laser diode fiber - coupling modules was summed up, they are, setting up the model of far - field distribution of laser array and the far - field characteristics of difference structures ; designing the temperature - controlled laser diode fiber modules, that has been used as a laser system with temperature - controlled and fiber - output ; realization with high - brightness laser diode fiber - coupling modules ; the fiber ' s application in the field of high power laser
總結了自己在光纖耦合輸出激光二極體模塊方面所做的一些工作,建立了半導體激光器列陣遠場光束分佈模型,並結合具體參數分析了不同結構的激光器列陣的光束遠場分佈特性,可以知道我們設計和優化激光器列陣的結構。設計並製作了光纖耦合模塊的溫度控制系統,並製作成溫控光纖輸出激光器半導體系統投入使用。In this work of part 1, as a main body of this dissertation, multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0. 05 % to 3. 1 %. in part 2, the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied
隨著與氮有關的化合物半導體在短波發光器件(如藍色發光二極體和紫色激光器件等)方面的巨大應用潛力和發展, gapn作為一種新型的含氮-族化合物半導體材料,其光電性質引起了人們的關注。Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification
半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范The second - order nonlinear susceptibility in semiconductor asymmetric step quantum well structure
半導體非對稱階梯量子阱結構的二階非線性極化率Tabular layouts of article characteristics for semiconductor diodes
第18部分:半導體二極體用物品特性表格設計In all of the optoelectronic materials, cds was paid more attention for the excellent properties, which has commercial and potential applications in light - emitting diodes, solar cells, and other optoelectronic devices
在眾多半導體納米材料中, cds納米粒子以其優良的性能引起了許多科學家的極大關注。 cds是典型的-族直接帶隙半導體化合物,室溫下其禁帶寬度為2 . 42ev 。Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties
氧化鋅( zno )是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料,由於其優良的特性,在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。Dmss have attracted a great deal of attention because of their potential application to spin - electronic device and quantum computer dull to their combined properties of both magnetic materials and semiconductors
由於這種材料具有半導體和磁性材料的綜合特性,可望廣泛應用於未來的自旋電子器件以及量子計算機中,從而引起了人們極大的興趣。Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact
肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。Semiconductor materials was laid on the base, and the corresponding electrode was lead to. the semiconductor material has selective adsorption to the gas that changes the electronic concentration which also raises hall coefficient, corresponding changes the export of hall electromotive force, so the gas sensors which is based on hall effect was made
當我們把半導體材料塗敷到基片上,並引出相應的電極,由於氣敏材料對個別氣體有選擇的吸附特性從而改變了材料中的電子濃度,也就引起了霍耳系數的相應變化,輸出的霍耳電動勢也跟著變化,就製成了基於霍耳效應的氣敏傳感器。For ga5p5 cluster, the most stable structure is a cube - based structure. the calculation of the density of states for ga5p5 shows semiconductor - like property. the ir and raman spectra, the dipole polarizability anisotropy invariant and hyperpolarizability are also calculated
對于ga _ 5p _ 5團簇的最穩定結構,用b3lyp 6 - 31 + g ~ *又進行了優化,計算了態密度,發現其具有半導體的性質,還計算了紅外和raman譜以及極化率,超極化率。The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %
本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上,長度80mm以上的平界面無核心nd : cngg單晶,確定了晶體結構和物相,測量了晶體的光譜性能,晶體消光比達到34db ,晶體生長技術有新的突破,實現了連續激光運轉,用單支807nm半導體激光二極體端面泵浦該晶體片子,在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出,斜效率達22 . 3 % 。Wang zijun ( condensed matter physics ) directed by prof. zhong guozhu and li wenlian hotly studied organic thin film electroluminescence, because of its ultra high brightness and efficiency, reminds man to consider the possibility of realizing organic semiconducting laser diods
熱點研究的有機薄膜電致發光,由於極高的亮度和效率,使人聯想有機半導體薄膜激光二極體的可能性。率先的突破是在單晶上作出的,用了場效應注入雙電極。After a brief introduction to the excitation of semiconductor luminescence diode, the light - emitting machenisms of various new luminescence materials, including - and - semiconductor compounds and ps, the structures of different luminescence diodes, and their properties were discussed, and the application of semiconductor luminescence diode in modern science was presented
在簡介半導體發光二極體的輻射復合基礎上,詳細討論了包括?族、 ?族化合物半導體材料和多孔硅( ps )等新發光材料在內的各種發光材料的發光機理、發光二極體的結構與特性.並介紹了半導體發光二極體在近代科學中的應用Quasineutral limit of the macroscopic mathematical models for semiconductors
半導體宏觀數學模型的擬中性極限Digital modulation is a important part of slltv, and it must meet the demond of slltv. the accomplishment of digital modulation greatly improves the performance and function of slltv, and it greatly promotes slltv research
而數字化調制系統的完成極大地提高了激光電視的性能和功能,有力地推動了《半導體激光大屏幕彩色電視》項目的研究。In this paper, after studying the technology of virtual instrument and the characteristics of ld, we developed the ld test system using the design idea of virtual instrument 。 the system is mainly used for test the threshold current, differential efficiency, v - i characteristic and p - i characteristic of ld module
本課題在對虛擬儀器技術和半導體激光器各項性能參數深入研究的基礎上,採用虛擬儀器的設計思想,研究開發了基於虛擬儀器技術的半導體激光器特性參數檢測系統。該系統主要面向組裝后的激光二極體組件,對其進行電流閾值( ith ) 、光電特性( p - i ) 、電抗特性( v - i )等主要特性的測試。Gas - sensing technology, which employs laser diode ( ld ) and light emitted diode ( led ) as light resource, has multitude advantages over traditional approaches, such as high sensitivity, multiple selection, wide dynamic range, good signal to noise ratio and quick response time
以半導體激光器或發光二極體作為光源的氣體傳感技術在靈敏度、選擇性、動態范圍、信噪比和響應時間等方面比傳統方法具有諸多優點。分享友人