極晶體 的英文怎麼說
中文拼音 [jíjīngtǐ]
極晶體
英文
polar crystal-
Semiconductor devices - part 7 : bipolar transistors
半導體裝置.第7部分:雙極晶體管The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。High power solid modulator with insulated gate bipolar transistor
絕緣柵控雙極晶體管大功率固態調制器High frequency switching technique is becoming more popular in the power electronics area, the high frequency power transistors are applied in the buck - boost type chopper system. the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ), some new kinds of power swithing devices, are deeply studied
高頻開關技術是當今電力電子技術發展的方向，本文研究的buck - boost斬波系統中採用了高頻功率器件，所以本文對新型開關器件? ?功率mos場效應管[ mosfet ]和絕緣門極晶體管[ igbt ]的特性進行了初步研究。Blank detail specification - case - rated bipolar transistors for high frequency amplification ; german version en 150007 : 1991
空白詳細規范.高頻放大額定功率雙極晶體管Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification
電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification
半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification
電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications
電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管, 100a semiconductor devices ; discrete devices ; part 6 : thyristors ; section 2 : blank detail specification for bidirectional triode thyristors triacs, ambient or case, up to 100 a
半導體器件.分立器件.第6部分:晶體閘流管.第2節:雙向三極晶體閘流Semiconductor devices - discrete devices - bipolar transistors for power switching applications
半導體器件.分立器件.電開關裝置用雙極晶體管Then we studied the bmhmt method of soi mosfet and its merit : larger drive current which enables it to be the candidate of bjt in realizing bicmos circuits
之後我們研究了soimosfet的bmhmt工作模式，同時介紹了這種工作模式的優點:驅動電流大，可替代bicmos電路中的三極晶體管實現bicmos電路。Bipolar transistors of the type of 3dd820 and 3dd15d ( with f2 metal - pack ) are taken as an example in the study to verify the method of controllable junction temperature
以3dd820 ， 3dd15d （ f2金屬封裝）雙極晶體管為實驗對象，對結溫可控的晶體管穩態工作壽命試驗方法進行了驗證。In a bipolar transistor, the control area or the electrical connection to the control area
在雙極晶體管中，指控制區域或和控制區相連的導電連接。Blank detail specification - case - rated bipolar transistors for low frequency amplification ; german version en 150003 : 1991
空白詳細規范.低頻放大額定功率雙極晶體管Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for low frequency amplification
電子元器件質量評定協調體系規范.空白詳細規范.低頻放大用管殼額定雙極晶體管Standard test method for use of 2n2222a silicon bipolar transistors as neutron spectrum sensors and displacement damage monitors
作為中子光譜傳感器和位移損壞監測器的2n2222a硅雙極晶體管的使用的標準試驗方法Performance of a self - aligned inp gainas shbt with a novel t - shaped emitter
單異質結雙極晶體管的性能In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )
本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。Discrete semiconductor devices and integrated circuits - bipolar transistors
分立半導體器件和集成電路.雙極晶體管分享友人