機械拋光機 的英文怎麼說

中文拼音 [jīxièpāoguāngjī]
機械拋光機 英文
mechanical polisher
  • 機 : machineengine
  • 械 : 名詞1. （器械） tool; instrument 2. （武器） weapon 3. [書面語] （枷和鐐銬之類的刑具） fetters, shackles, etc
  • 拋 : 動詞1. （扔; 投擲） throw; toss; fling 2. （丟下; 拋棄） leave behind; cast aside; abandon
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 機械 : 1. （利用力學原理組成的各種裝置） machinery; machine; mechanism 2. （死板; 刻板） mechanical; inflexible; rigid
  1. The most common finishing operations are mechanical, such as milling, grinding, or polishing with abrasives.

    最普通的精加工工序是用機械的方法，如研磨，磨削或用磨料拋光。
  2. Newer materials, such as syton, are chemo - mechanical and are beginning to be used

    較新的材料，如syton這種化學?機械拋光劑正開始使用。
  3. Chemical mechanical polishing planarization, cmp

    化學機械拋光
  4. Plating glass bead : damp proof, keep light and adapt to use in the damp districts, where it abound with rain and fog

    適用於機械噴丸、金屬物的清理拋光、表面處理及塑料、橡膠、油漆和復合材料等化工產品的填加劑、增強劑的高強度玻璃微珠。
  5. Chemical - mechanical - polishing ( cmp ) has been rapidly developing and finding extensive applications in the integrated circuit ( ic ) manufacturing industry for processing hard disk of computer and silicon wafer with super - smooth and flawless surface

    集成電路（ ic ）製造工業中，化學機械拋光（ chemicalmechanicalpolishing ， cmp ）廣泛應用於計算機硬盤片、硅晶片超光滑無損傷表面的加工。
  6. Corrosion and passivation of copper in the cmp slurry of ch3nh2 - k3 fe

    鐵氰化鉀化學機械拋光液中的腐蝕與鈍化
  7. Specification : metal ingot, mechanically polished, the detailed specification can be customized in size according to your request

    形狀：金屬錠，機械拋光，每塊大小可按您的要求。
  8. A set of conventional processing methods of vanadium and vanadium alloy specimens, including mechanical polishing, mechanical chemical polishing, chemical etching as well as relevant techniques and experiences is introduced

    摘要介紹了一種釩及釩基合金金相試樣的常規制樣方法，即試樣的機械磨光，機械化學拋光，化學侵蝕等技術和經驗。
  9. Newer materials, such as syton, are chemo-mechanical and are beginning to be used.

    較新的材料，如Syton這種化學機械拋光劑正開始使用。
  10. We used mechnical rubbing and polishing replace handwork to reduce total thickness variation ( ttv ) of cdznte wafers and surface damage layer. by comparing different polishing methods, we find out an appropriated chemical mechical polishing ( cmp ) for czt wafers

    採用了機械拋光代替了手工拋光，解決了手工拋光造成的表面不均勻以及表面損傷層過厚的問題，並比較了機械拋光與化學機械拋光，初步摸索了合適的化學機械拋光工藝。
  11. The cmp experiment was carried out systematically on litao3 wafer. the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details

    通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究，通過測量鉭酸鋰晶片在不同拋光條件下的表面粗糙度和材料去除率，詳細分析了拋光墊材料和狀態、拋光壓力、拋光盤轉速、磨料種類及粒度、拋光液組成等幾個因素對拋光表面質量和材料去除率的影響規律。
  12. The primary investigation was carried out using mechanical polishing equipment. the diamond films after polishing were observed by means of scanning electron microscope. the machining process and the factors which influence the polishing efficiency and quality were preliminary discussed

    開展了金剛石膜的機械拋光研究，使用自製的研磨裝置對金剛石膜進行精拋光加工，分析拋光速度等工藝參數對加工效果和效率的影響，並通過sem等手段分析了微觀形貌和拋光機理。
  13. Chemical - mechanical polish ( cmp ) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. it is used during the fabrication process

    化學-機械拋光（ cmp ） -平圓晶光拋和整片的工藝，採用化學移除和機械拋。式方種兩光此工藝在前道工藝中使用。
  14. Analysis on pad effects in chemical mechanical polishing

    化學機械拋光中拋光墊作用分析
  15. Chemical mechanical polishing for mutilevel interconnect in ulsi

    多層互連中的化學機械拋光工藝
  16. Chemmically - mechanically polish

    化學機械拋光
  17. Modeling of chemical mechanical polishing material removal based on molecular - scale mechanism

    基於單分子層去除機理的晶元化學機械拋光材料去除模型
  18. The analysed results show that the reasonable rotating speed np and distance e between workpiece plate center and polishing plate center are 60rpm and 100mm on ultra - precision surface polishing machine with correction rings, respectively

    適合鉭酸鋰晶片化學機械拋光的拋光盤轉速為n _ p = 60rpm ，工件盤中心到拋光盤中心的距離為e = 100mm 。
  19. Circularly translational - moving polishing ( ctp ) is a new type polishing method with best kinematics conditions of polishing, and can obtain better work efficiency and quality than the traditional cmp method

    圓平動研拋（ circularlytranslational - movingpolishing ， ctp ）是一種新型的化學機械拋光方式。 ctp能實現拋光所需要的最佳運動學條件，所以能得到比傳統的cmp更好的加工效果。
  20. Secondly, a novel technology is proposed which includes several key steps such as lpcvd ( low pressure chemical vapor deposition ) nitride silicon and cmp ( chemical mechanical polishing )

    其次，設計包含低壓淀積氮化硅和化學機械拋光（ cmp ）等關鍵步驟的新的soi介質隔離工藝流程。
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