橫向導電率 的英文怎麼說

中文拼音 [héngxiàngdǎodiànlǜ]
橫向導電率 英文
transverse conduction
  • 橫 : 橫形容詞1. （蠻橫; 兇暴） harsh and unreasonable; perverse 2. （不吉利的; 意外的） unexpected
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 橫向 : broadwise; infeed; crossrange; abeam;transverse; transverse direction; cross; crosswise; lateral;...
  1. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  2. The ratio of light conductivity to dark conductivity of the nv - si / a - si : h photoconductor is 103, and the light conductivity of nc - si / a - si : h photoconductor in the normal is 2 - 4 times more than that in the lateral

    這種nc - si a - si ： h光導膜具有柱狀結構，薄膜的光暗電導比達到10 ~ 3 ，其縱向電導率是橫向電導率的2 4倍。
  3. In the case of single - channel magnetic guiding, we calculate the relationship between the guiding efficiency and electric current or the transverse temperature of atomic beam. we also propose several atom - optical elements base on the uccc

    本文也計算了單通道磁導引情況下，原子導引效率和電流、原子束橫向溫度之間的關系，並採用u -型載流導體構建了多種原子光學器件。
  4. For the application of sic devices to radiation fields, it is important to know the irradiation effects and characteristics of sic materials and devices. the main contributions in this thesis are as following : temperature - and electric field - dependent electron transport in 6h - s1c is studied by single - particle monte carlo technique. the physical model used in the simulation is developed considering the main scattering mechanisms in details

    為了能充分發揮sic抗輻照的優勢和潛力，本文首先對sic區別于常規半導體的特性作了系統的研究：用單粒子montecarlo方法研究了6h - sic的電子輸運規律，模擬的結果體現了6h - sic具有良好的高溫和高場特性以及遷移率的各項異性，其橫向遷移率和縱向遷移率相差近5倍。
  5. A collinear acoustooptic - deflector of pronton - exchanged linbo3 channel wave - guide is studied. the theoretical analysis, structure design and device fabrication of linbo3 pronton - exchanged acoustooptic wave - guided deflector have been finished in this thesis. the width of wave - guide, the width, spacing, effective aperture and width of electrode of interdigital transduces have been theoretically analyzed and designed

    本論文研究了一種質子交換linbo3溝道波導共線式聲光偏轉器，其特點是利用了溝道波導的橫向約束，限制了聲波的發散和衍射效應，使得窄孔徑電極結構得以實現，從而增加了功率密度，使總的聲場驅動功率降低。
  6. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  7. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
分享友人
分享到 Line

分享到臉書